Revision 2.4
April 2002
1
Very Low Power/Voltage CMOS SRAM
128K x 16 or 256K x 8 bit switchable
The BS616LV2023 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits or
262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.1uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by active HIGH chip enable2
(CE2) , active LOW chip enable1(CE1), active LOW output enable(OE)
and three-state output drivers.
The BS616LV2023 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2023 is available in DICE form and 48-pin BGA type.
Very low operation voltage : 2.4 ~ 3.6V
Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by CIO, LB and UB pin
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PRODUCT FAMILY
Brilliance Semiconductor Inc
. reserves the right to modify document contents without notice.
BS616LV2023
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A1 A2 A3
Data
Buffer
Input
Control
Vss
Vdd
OE
WE
CE1
D15
D0
A11
A7
A8
A12
A13
16(8)
16(8)
16(8)
16(8)
14(16)
128(256)
2048
1024
20
A10
A9
A0
A6
A4
A16
A14
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
A15
CIO
CE2
(SAE)
PIN CONFIGURATION
R0201-BS616LV2023
POWER DISSIPATION
STANDBY
( I
CCSB1
, Max )
Operating
( I
CC
, Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
( ns )
Vcc=3.0V
Vcc=3.0V
PKG TYPE
BS616LV2023DC
DICE
BS616LV2023AC
+0
O
C to +70
O
C
2.4V ~ 3.6V
70 / 100
0.7uA
20mA
BGA-48-0608
BS616LV2023DI
DICE
BS616LV2023AI
-40
O
C to +85
O
C
2.4V ~ 3.6V
70 / 100
1.5uA
25mA
BGA-48-0608
Vcc=3.0V
BSI
Revision 2.4
April 2002
2
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 131,072 x 16-bit words in the RAM.
SAE Address Input
This address input incorporates with the above 17 address input select one of the
262,144 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
CIO x8/x16 select input
This input selects the organization of the SRAM. 131,072 x 16-bit words configuration
is selected if CIO is HIGH. 262,144 x 8-bit bytes configuration is selected if CIO is
LOW.
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
D0 - D15 Data Input/Output Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
PIN DESCRIPTIONS
BSI
BS616LV2023
R0201-BS616LV2023
Revision 2.4
April 2002
3
TRUTH TABLE
BSI
BS616LV2023
UNIT
C
IN
Input
Capacitance
V
IN
=0V
6
pF
C
DQ
Input/Output
Capacitance
V
I/O
=0V
8
pF
ABSOLUTE MAXIMUM RATINGS
(1)
OPERATING RANGE
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
1. This parameter is guaranteed and not 100% tested.
SYMBOL
PARAMETER
RATING
UNITS
V
TERM
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
T
BIAS
Temperature Under Bias
-40 to +125
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
R0201-BS616LV2023
MODE
CE1
CE2
OE
WE
CIO
LB
UB
SAE
D0~7
D8~15
VCC Current
H
X
X
X
Fully Standby
X
L
X
X
X
X
X
X
High-Z
High-Z
I
CCSB
, I
CCSB1
Output Disable
L
H
H
H
X
X
X
X
High-Z
High-Z
I
CC
L
H
Dout
High-Z
H
L
High-Z
Dout
Read from SRAM
( WORD mode )
L
H
L
H
H
L
L
X
Dout
Dout
I
CC
L
H
Din
X
H
L
X
Din
Write to SRAM
( WORD mode )
L
H
X
L
H
L
L
X
Din
Din
I
CC
Read from SRAM
( BYTE Mode )
L
H
L
H
L
X
X
A-1
Dout
High-Z
I
CC
Write to SRAM
( BYTE Mode )
L
H
X
L
L
X
X
A-1
Din
X
I
CC
2.4V ~ 3.6V
2.4V ~ 3.6V
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0
O
C to +70
O
C
Industrial
-40
O
C to +85
O
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
Revision 2.4
April 2002
4
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
IL
Guaranteed Input Low
Voltage
(2)
Vcc=3.0V
-0.5
--
0.8
V
V
IH
Guaranteed Input High
Voltage
(2)
Vcc=3.0V
2.0
--
Vcc+0.2
V
I
IL
Input Leakage Current
Vcc = Max, V
IN
= 0V to Vcc
--
--
1
uA
I
LO
Output Leakage Current
Vcc = Max, CE1 = V
IH
or CE2=V
IL
or OE = V
IH
,
V
I/O
= 0V to Vcc
--
--
1
uA
V
OL
Output Low Voltage
Vcc = Max, I
OL
= 2mA
Vcc=3.0V
--
--
0.4
V
V
OH
Output High Voltage
Vcc = Min, I
OH
= -1mA
Vcc=3.0V
2.4
--
--
V
I
CC
Operating Power Supply
Current
Vcc = Max, CE1= V
IL
, CE2=V
IH
I
DQ
= 0mA, F = Fmax
(3)
Vcc=3.0V
--
--
20
mA
I
CCSB
Standby CurrentTL
Vcc = Max, CE1 = V
IH
or CE2=V
IL
I
DQ
= 0mA
Vcc=3.0V
--
--
1
mA
I
CCSB1
Standby CurrentMOS
Vcc = Max, CE1Vcc-0.2V or
CE20.2V ,
Other inputs Vcc - 0.2V or V
IN
0.2V
Vcc=3.0V
--
0.1
0.7
uA
1. Typical characteristics are at TA = 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
DC ELECTRICAL CHARACTERISTICS
(TA = 0
o
C to +70
o
C)
BSI
BS616LV2023
R0201-BS616LV2023
Revision 2.4
April 2002
5
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
DR
Vcc for Data Retention
CE1 Vcc - 0.2V or CE2 0.2V or
V
IN
Vcc - 0.2V or V
IN
0.2V
1.5
--
--
V
I
CCDR
Data Retention Current
CE1 Vcc - 0.2V or CE2 0.2V
V
IN
Vcc - 0.2V or V
IN
0.2V
--
0.05
0.5
uA
t
CDR
Chip Deselect to Data
Retention Time
0
--
--
ns
t
R
Operation Recovery Time
See Retention Waveform
T
RC
(2)
--
--
ns
DATA RETENTION CHARACTERISTICS
( TA = 0 to + 70
o
C )
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
BSI
BS616LV2023
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t
CDR
Vcc
t
R
V
IH
V
IH
Vcc
V
DR
1.5V
CE1 Vcc - 0.2V
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t
CDR
Vcc
t
R
V
IL
V
IL
Vcc
V
DR
1.5V
CE2 0.2V
R0201-BS616LV2023
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