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Электронный компонент: OPA648

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OPA648
ULTRA-WIDEBAND CURRENT
FEEDBACK OPERATIONAL AMPLIFIER
DESCRIPTION
The OPA648 is an ultra high bandwidth current feed-
back operational amplifier. The current feedback ar-
chitecture also allows for a very high slew rate, which
gives excellent large signal bandwidth, even at high
gains. The high slew rate and well-behaved pulse
response allow for superior large signal amplification
in a variety of RF, video and other signal processing
applications. Fabricated on an advanced complemen-
tary bipolar process, the OPA648 offers exceptional
performance in monolithic form.
APPLICATIONS
q
HIGH-SPEED SIGNAL PROCESSING
q
HIGH-RESOLUTION CRT PREAMP
q
HIGH-RESOLUTION VIDEO
q
PULSE AMPLIFICATION
q
IF SIGNAL PROCESSING
q
DAC I/V CONVERSION
q
ADC BUFFER
FEATURES
q
WIDE BANDWIDTH: 1GH
Z
q
LOW DIFFERENTIAL GAIN/PHASE
ERRORS: 0.02%/0.02
q
GAIN FLATNESS: 0.1dB to 100MHz
q
FAST SLEW RATE: 1200V/
s
q
CLEAN PULSE RESPONSE
q
UNITY GAIN STABLE
OPA648
OPA648
OPA648
International Airport Industrial Park Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706
Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
C
C
Current Mirror
In
In
+
V
OUT
I
BIAS
I
BIAS
+V
S
V
S
Current Mirror
Buffer
1994 Burr-Brown Corporation
PDS-1253A
Printed in U.S.A June, 1995
OPA648
2
NOTES: (1) Bandwidth can be degraded by a non-optimal PC board layout. Refer to the DEM-OPA64X datasheet for layout recommendations. (2) Slew rate is the
rate of change from 10% to 90% of the output voltage step.
SPECIFICATIONS
ELECTRICAL
T
A
= +25
C, V
S
=
5V, R
L
= 100
, C
L
= 2pF, and R
FB
= 243
unless otherwise noted.
OPA648H, P, U
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
FREQUENCY RESPONSE
Small Signal Bandwidth
(1)
G = +1
1.0
GHz
G = +2
600
MHz
Slew Rate
(2)
G = +2, 1V Step
1200
V/
s
Settling Time
0.01%
G = +2, 1V Step
20
ns
0.1%
G = +2, 1V Step
9
ns
1%
G = +2, 1V Step
3
ns
Spurious Free Dynamic Range
G = +2, f = 5.0MHz, V
O
= 2Vp-p
60
dBc
G = +2, f = 20.0MHz, V
O
= 2Vp-p
51
dBc
Differential Gain, G = +2
3.58MHz, V
O
= 1.4Vp-p, R
L
= 150
0.02
%
Differential Phase, G = +2
3.58MHz, V
O
= 1.4Vp-p, R
L
= 150
0.02
degrees
Gain Flatness
DC to 100MHz
0.1
dB
OFFSET VOLTAGE
Input Offset Voltage
2
6
mV
Average Drift
10
V/
C
Power Supply Rejection Ratio
V
S
=
4.5 to
5.5V
45
58
dB
INPUT BIAS CURRENT
Non-Inverting
12
65
A
Over Specified Temperature
30
95
A
Inverting
20
65
A
Over Specified Temperature
50
95
A
NOISE
Input Voltage Noise
Noise Density, f = 100Hz
10.4
nV/
Hz
f = 1kHz
2.3
nV/
Hz
f = 10kHz
2.3
nV/
Hz
f = 1MHz
2.3
nV/
Hz
Voltage Noise, BW = 10Hz to 200MHz
32.5
Vrms
Input Bias Current Noise
Current Noise Density, f = 0.1Hz to 20kHz
15
pA/
Hz
INPUT VOLTAGE RANGE
Common-Mode Input Range
2
2.25
V
Common-Mode Rejection
V
CM
=
0.5V
35
55
dB
INPUT IMPEDANCE
Non-inverting
22 || 0.75
k
|| pF
Inverting
20
OPEN-LOOP TRANSIMPEDANCE
Open-Loop Transimpedance
V
O
=
2V, R
L
= 1k
100
165
k
OUTPUT
Current Output
33
45
mA
Over Specified Temperature
25
40
mA
Voltage Output
No Load
Over Specified Temperature
2.75
3.0
V
Voltage Output
R
L
= 150
2.2
2.5
V
Over Specified Temperature
2.0
2.3
V
Short-Circuit Current
75
mA
Output Resistance
1MHz, G = +2V/V
0.08
POWER SUPPLY
Specified Operating Voltage
T
MIN
to T
MAX
5
V
Operating Voltage Range
T
MIN
to T
MAX
4.5
5.5
V
Quiescent Current
13
20
mA
Over Specified Temperature
15
23
mA
TEMPERATURE RANGE
Specification
Ambient
40
+85
C
Storage
Ambient
55
+150
C
Thermal Resistance,
JA
P
120
C/W
U
170
C/W
H
120
C/W
OPA648
3
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-Brown
Corporation recommends that all integrated circuits be handled
and stored using appropriate ESD protection methods.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet published speci-
fications.
TEMPERATURE
MODEL
PACKAGE
RANGE
OPA648H
8-Pin Ceramic Sidebraze DIP
40
C to +85
C
OPA648P
8-Pin Plastic Single-Wide DIP
40
C to +85
C
OPA648U
8-Pin Surface Mount
40
C to +85
C
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
ABSOLUTE MAXIMUM RATINGS
Supply ..........................................................................................
5.5VDC
Internal Power Dissipation
(1)
....................... See Thermal Considerations
Differential Input Voltage .............................................................. Total V
S
Input Voltage Range ............................................................................
5V
Storage Temperature Range: H .................................... 65
C to +150
C
P .................................... 40
C to +125
C
Lead Temperature (soldering, 10s) .............................................. +300
C
(soldering, SO-8 3s) ....................................... +260
C
Junction Temperature (T
J
) ............................................................ +175
C
NOTE: (1) Packages must be derated based on specified
JA
. Maximum
T
J
must be observed.
PIN CONFIGURATION (All Packages)
Top View
8-Pin Ceramic/DIP/SO-8
PACKAGE INFORMATION
PACKAGE DRAWING
MODEL
PACKAGE
NUMBER
(1)
OPA648H
8-Pin Ceramic Sidebraze DIP
157
OPA648P
8-Pin Plastic Single-Wide DIP
006
OPA648U
8-Pin Surface Mount
182
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
ORDERING INFORMATION
1
2
3
4
8
7
6
5
NC
+V
S1
Output
NC
NC
Input
+Input
V
S1
OPA648
4
TYPICAL PERFORMANCE CURVES
T
A
= +25
C, V
S
=
5V, R
L
= 100
, C
L
= 2pF, and R
FB
= 243
unless otherwise noted.
COMMON-MODE REJECTION vs TEMPERATURE
25
40
55
85
125
Temperature (C)
CMRR (dB)
57
56
55
54
53
POWER SUPPLY REJECTION vs TEMPERATURE
25
40
55
85
125
Temperature (C)
70
65
60
55
50
45
40
PSR (dB)
PSR
+PSR
OUTPUT CURRENT vs TEMPERATURE
I
O
(mA)
I
O
+
I
O
25
40
55
85
125
Temperature (C)
50
48
46
44
42
40
INVERTING INPUT BIAS CURRENT vs TEMPERATURE
I
B
(
A)
25
40
55
85
125
Temperature (C)
10
8
6
4
2
0
SUPPLY CURRENT vs TEMPERATURE
25
40
55
85
125
Temperature (C)
16
15
14
13
12
11
10
9
8
I
Q
(mA)
OUTPUT VOLTAGE SWING
vs TEMPERATURE (R
L
= 150)
25
40
55
85
125
Temperature (C)
2.6
2.5
2.4
2.3
V
O
(V)
OPA648
5
TYPICAL PERFORMANCE CURVES
(CONT)
T
A
= +25
C, V
S
=
5V, R
L
= 100
, C
L
= 2pF, and R
FB
= 243
unless otherwise noted.
NON-INVERTING INPUT BIAS CURRENT vs
TEMPERATURE
I
B+
(
A)
25
40
55
85
125
Temperature (C)
6
7
8
9
10
11
12
13
14
15
16
G = +1 CLOSED-LOOP BANDWIDTH
1M
10M
100M
1G
3G
Frequency (Hz)
6
3
0
3
6
9
12
Gain (dB)
SO-8 Bandwidth 1.5GHz
DIP Bandwidth 1.1GHz
G = +5 CLOSED-LOOP BANDWIDTH
1M
10M
100M
1G
3G
Frequency (Hz)
17
14
11
8
5
2
Gain (dB)
SO-8/DIP
Bandwidth 292MHz
G = +10 CLOSED-LOOP BANDWIDTH
1M
10M
100M
1G
3G
Frequency (Hz)
23
20
17
14
11
8
Gain (dB)
SO-8/DIP
Bandwidth 102MHz
OPEN-LOOP GAIN AND PHASE
vs FREQUENCY
100k
10k
1k
1M
10M
100M
1G
Frequency (Hz)
60
40
20
0
20
0
45
90
135
180
Gain (dB)
Phase ()
Open-Loop Gain
Open-Loop Phase
G = +2 CLOSED-LOOP BANDWIDTH
1M
10M
100M
1G
3G
Frequency (Hz)
12
9
6
3
0
3
6
Gain (dB)
DIP Bandwidth 612MHz
SO-8
Bandwidth
717MHz
OPA648
6
TYPICAL PERFORMANCE CURVES
(CONT)
T
A
= +25
C, V
S
=
5V, R
L
= 100
, C
L
= 2pF, and R
FB
= 243
unless otherwise noted.
DIP CLOSED-LOOP BANDWIDTH vs GAIN
Frequency (Hz)
3
4
5
6
7
8
9
10
2
1
Non-Inverting Gain
1.2G
1.0G
800M
600M
400M
200M
0
SO-8 CLOSED-LOOP BANDWIDTH vs GAIN
Frequency (Hz)
3
4
5
6
7
8
9
10
2
1
Non-Inverting Gain
1.6G
1.4G
1.2G
1.0G
800M
600M
400M
200M
0
RECOMMENDED ISOLATION RESISTANCE
vs CAPACITIVE LOAD (G = +2)
Isolation Resistance, R
OUT
(
)
0
10
20
30
40
50
60
70
80
90
100
Capacitive Load (pF)
40
35
30
25
20
15
10
5
0
243
243
R
OUT
C
L
R
L
SMALL SIGNAL TRANSIENT RESPONSE
(G = +2)
Output Voltage (mV)
Time (2ns/div)
200
160
120
80
40
0
40
80
120
160
200
LARGE SIGNAL TRANSIENT RESPONSE
(G = +2)
Output Voltage (V)
Time (2ns/div)
1.4
1.12
0.84
0.56
0.28
0
0.28
0.56
0.84
1.12
1.4
DISTORTION vs FREQUENCY
(G = +2, V
O
= 2Vp-p)
Distortion (dBc)
10M
1M
100M
Frequency (Hz)
40
50
60
70
80
2f
O
3f
O
OPA648
7
TYPICAL PERFORMANCE CURVES
(CONT)
T
A
= +25
C, V
S
=
5V, R
L
= 100
, C
L
= 2pF, and R
FB
= 243
unless otherwise noted.
APPLICATIONS INFORMATION
THEORY OF OPERATION
This current feedback architecture offers the following im-
portant advantages over voltage feedback architectures: (1)
the high slew rate allows the large signal performance to
approach the small signal performance, and: (2) there is less
bandwidth degradation at higher gain settings.
DC GAIN TRANSFER CHARACTERISTICS
The circuit in Figure 1 shows the equivalent circuit for
calculating the DC gain. When operating the device in the
inverting mode, the input signal error current (I
E
) is ampli-
fied by the open-loop transimpedance gain (T
O
). The output
signal generated is equal to T
O
X I
E
. Negative feedback is
applied through R
FB
such that the device operates at a gain
equal to R
FB
/R
FF
.
FIGURE 1. Equivalent Circuit.
DISTORTION vs GAIN
(f
O
= 5MHz, V
O
= 2Vp-p)
Distortion (dBc)
2
4
6
8
Non-Inverting Gain (V/V)
40
50
60
70
80
2f
O
3f
O
10MHz HARMONIC DISTORTION vs OUTPUT SWING
(G = +2)
2
1
0
3
4
Output Swing (Vp-p)
50
60
70
80
90
100
110
Harmonic Distortion (dBc)
2f
O
3f
O
For non-inverting operation, the input signal is applied to the
non-inverting (high impedance buffer) input. The output
(buffer) error current (I
E
) is generated at the low impedance
inverting input. The signal generated at the output is fed
back to the inverting input such that the overall gain is (1 +
R
FB
/R
FF
).
Where a voltage-feedback amplifier has two symmetrical
high impedance inputs, a current feedback amplifier has a
low inverting (buffer output) impedance and a high non-
inverting (buffer input) impedance.
The closed-loop gain for the OPA648 can be calculated
using the following equations:
(1)
(2)
At higher gains the small value inverting input impedance
causes an apparent loss in bandwidth. This can be seen from
the equation:
(3)
Inverting Gain
=
R
FB
R
FF




1
+
1
Loop Gain
ACTUAL
BW
=
IDEAL
BW
1
+
R
S
R
FB




1
+
R
FB
R
FF






where Loop Gain
=
T
O
R
FB
+
R
S
1
+
R
FB
R
FF




Non
-
Inverting Gain
=
1
+
R
FB
R
FF


1
+
1
Loop Gain
V
O
T
O
C
C
L
S
R
S
C
1
V
I
V
N
R
FF
R
FB
I
E
+
OPA648
8
WIRING PRECAUTIONS
Maximizing the OPA648's capability requires some wiring
precautions and high-frequency layout techniques. Oscilla-
tion, ringing, poor bandwidth and settling, gain peaking, and
instability are typical problems plaguing all high-speed
amplifiers when they are improperly used. In general, all
printed circuit board conductors should be wide to provide
low resistance, low impedance signal paths. They should
also be as short as possible. The entire physical circuit
should be as small as practical. Stray capacitances should be
minimized, especially at high impedance nodes, such as the
amplifier's input terminals. Stray signal coupling from the
output or power supplies to the inputs should be minimized.
All circuit element leads should be no longer than 1/4 inch
(6mm) to minimize lead inductance, and low values of
resistance should be used. This will minimize time constants
formed with the circuit capacitances and will eliminate
stray, parasitic circuits.
Grounding is the most important application consideration
for the OPA648, as it is with all high-frequency circuits.
Oscillations at high frequencies can easily occur if good
grounding techniques are not used. A heavy ground plane
(1oz. copper recommended) should connect all unused areas
on the component side. Good ground planes can reduce stray
signal pickup, provide a low resistance, low inductance
common return path for signal and power, and can conduct
heat from active circuit package pins into ambient air by
convection.
Supply bypassing is extremely critical and must always be
used, especially when driving high current loads. Both
power supply leads should be bypassed to ground as close as
possible to the amplifier pins. Tantalum capacitors (2.2
F)
with very short leads are recommended. A parallel 0.1
F
ceramic must also be added. Surface-mount bypass capaci-
tors will produce excellent results due to their low lead
inductance. Additionally, suppression filters can be used to
isolate noisy supply lines. Properly bypassed and modula-
tion-free power supply lines allow full amplifier output and
optimum settling time performance.
Points to Remember
1) Making use of all four power supply pins will lower the
effective power supply inductance seen by the input and
output stages. This will improve the AC performance in-
cluding lower distortion. The lowest distortion is achieved
when running separated traces to V
S1
and V
S2
. Power supply
bypassing with 0.01
F and 2.2
F surface mount capacitors
is recommended. It is essential to keep the 0.1
F capacitor
very close to the power supply pins. Refer to the demonstra-
tion board figure in the DEM-OPA64X datasheet for
the recommended layout and component placements.
(2) Whenever possible, use surface mount. Don't use point-
to-point wiring as the increase in wiring inductance will be
detrimental to AC performance. However, if it must be used,
very short, direct signal paths are required. The input signal
ground return, the load ground return, and the power supply
common should all be connected to the same physical point
to eliminate ground loops, which can cause unwanted
feedback.
3) Surface mount on the backside of the PC Board. Good
component selection is essential. Capacitors used in critical
locations should be a low inductance type with a high quality
dielectric material. Likewise, diodes used in critical loca-
tions should be Schottky barrier types, such as HP5082-
2835 for fast recovery and minimum charge storage. Ordi-
nary diodes will not be suitable in RF circuits.
4) Whenever possible, solder the OPA648 directly into the
PC board without using a socket. Sockets add parasitic
capacitance and inductance, which can seriously degrade
AC performance or produce oscillations.
5) Use a small feedback resistor (usually 243
) in unity-
gain voltage follower applications for the best performance.
For gain configurations, resistors used in feedback networks
should have values of a few hundred ohms for best perfor-
mance. Shunt capacitance problems limit the acceptable
resistance range to about 1k
on the high end and to a value
that is within the amplifier's output drive limits on the low
end. Metal film and carbon resistors will be satisfactory, but
wirewound resistors (even "non-inductive" types) are abso-
This loss in bandwidth at high gains can be corrected
without affecting stability by lowering the value of the
feedback resistor from the specified value of 243
.
OFFSET VOLTAGE AND NOISE
The output offset is the algebraic sum of the input voltage
and current sources that influence DC operation. The output
offset is calculated by the following equation:
Output Offset Voltage =
Ib
N
x
R
N
(1 + R
FB
/R
G
)
V
IO
(4)
(1 + R
FB
/R
G
)
Ib
I
x
R
FB
If all terms are divided by the gain (1 + R
F
/R
G
), it can be
observed that input referred offsets improve as gain
increases.
The effective noise at the output of the amplifier can be
determined by taking the root sum of the squares of equation
4 and applying the spectral noise values found in the Typical
Performance Curvegraph section. This applies to noise
from the op amp only. Note that both the noise figure and
equivalent input offset voltages improve as the closed-loop
gain increases (by keeping R
F
fixed and reducing
R
I
with R
N
= 0
).
FIGURE 2. Output Offset Voltage Equivalent Circuit.
R
FB
R
G
Ib
I
R
N
Ib
N
OPA648
9
lutely unacceptable in high-frequency circuits. Feedback
resistors should be placed directly between the output and
the inverting input on the backside of the PC board. This
placement allows for the shortest feedback path and the
highest bandwidth. A longer feedback path than this will
decrease the realized bandwidth substantially. Refer to the
demonstration board layout at the end of the datasheet.
6) Surface-mount components (chip resistors, capacitors,
etc.) have low lead inductance and are therefore strongly
recommended. Circuits using all surface-mount components
with the OPA648U (SO-8 package) will offer the best AC
performance. The parasitic package impedance for the
SO-8 is lower than the both the 8-pin Ceramic and 8-pin
Plastic DIP.
7) Avoid overloading the output. Remember that output
current must be provided by the amplifier to drive its own
feedback network as well as to drive its load. Lowest
distortion is achieved with high impedance loads.
8) Don't forget that these amplifiers use
5V supplies.
Although they will operate perfectly well with +5V and
5.2V, use of
15V supplies will destroy the part.
9) Standard commercial test equipment has not been de-
signed to test devices in the OPA648's speed range. Bench-
top op amp testers and ATE systems will require a special
test head to successfully test these amplifiers.
10) Terminate transmission line loads. Unterminated lines,
such as coaxial cable, can appear to the amplifier to be a
capacitive or inductive load. By terminating a transmission
line with its characteristic impedance, the amplifier's load
then appears purely resistive.
11) Plug-in prototype boards and wire-wrap boards will not
be satisfactory. A clean layout using RF techniques is
essential; there are no shortcuts.
INPUT PROTECTION
Static damage has been well recognized for MOSFET de-
vices, but any semiconductor device deserves protection
from this potentially damaging source. The OPA648 incor-
porates on-chip ESD protection diodes as shown in Figure 3.
This eliminates the need for the user to add external protec-
tion diodes, which can add capacitance and degrade AC
performance.
by about 0.7V. This situation can occur with loss of the
amplifier's power supplies while a signal source is still
present. The diodes can typically withstand a continuous
current of 30mA without destruction. To insure long term
reliability, however, diode current should be externally lim-
ited to 10mA or so whenever possible.
The OPA648 utilizes a fine geometry high speed process
that withstands 500V using the Human Body Model and
100V using the machine model. However, static damage can
cause subtle changes in amplifier input characteristics with-
out necessarily destroying the device. In precision opera-
tional amplifiers, this may cause a noticeable degradation of
offset voltage and drift. Therefore, static protection is strongly
recommended when handling the OPA648.
OUTPUT DRIVE CAPABILITY
The OPA648 has been optimized to drive 75
and 100
resistive loads. This high-output drive capability makes the
OPA648 an ideal choice for a wide range of RF, IF, and
video applications. In many cases, additional buffer ampli-
fiers are unneeded.
Many demanding high-speed applications such as
ADC/DAC buffers require op amps with low wideband
output impedance. For example, low output impedance is
essential when driving the signal-dependent capacitances at
the inputs of flash A/D converters. As shown in Figure 4,
the OPA648 maintains very low closed-loop output imped-
ance over frequency. Closed-loop output impedance in-
creases with frequency since loop gain is decreasing with
frequency.
ESD Protection diodes internally
connected to all pins.
External
Pin
+V
CC
V
CC
Internal
Circuitry
FIGURE 3. Internal ESD Protection.
All pins on the OPA648 are internally protected from ESD
by means of a pair of back-to-back reverse-biased diodes to
either power supply as shown. These diodes will begin to
conduct when the input voltage exceeds either power supply
THERMAL CONSIDERATIONS
The OPA648 does not require a heat sink for operation in
most environments. At extreme temperatures and under full
load conditions a heat sink may be necessary.
The internal power dissipation is given by the equation
P
D
= P
DQ
+ P
DL
, where P
DQ
is the quiescent power dissipa-
tion and P
DL
is the power dissipation in the output stage due
to the load. (For
V
S
=
5V, P
DQ
= 10V
x
23mA = 230mW,
FIGURE 4. Output Resistance vs Frequency.
100
10
1
0.1
0.01
0.001
10k
100k
1M
10M
100M
Frequency (Hz)
Output Resistance R
S
(
)
G = +2
OPA648
10
max). For the case where the amplifier is driving a grounded
load (R
L
) with a DC voltage (
V
OUT
), the maximum value
of P
DL
occurs at
V
OUT
=
V
S
/2, and is equal to P
DL
,
max = (
V
S
)
2
/4R
L
. Note that it is the voltage across the
output transistor, and not the load, that determines the power
dissipated in the output stage.
The short-circuit condition represents the maximum amount
of internal power dissipation that can be generated. The
variation of output current with temperature is shown in the
Typical Performance Curves.
CAPACITIVE LOADS
The OPA648's output stage has been optimized to drive low
resistive loads. Capacitive loads, however, will decrease the
amplifier's phase margin which may cause high frequency
peaking or oscillations. Capacitive loads greater than 5pF
should be buffered by connecting a small resistance, usually
5
to 40
, in series with the output as shown in Figure 5.
This is particularly important when driving high capacitance
loads such as flash A/D converters.
Figure 6. Remember to include the contribution of the
feedback resistance when calculating the effective load re-
sistance seen by the amplifier.
In general, capacitive loads should be minimized for opti-
mum high frequency performance. Coax lines can be driven
if the cable is properly terminated. The capacitance of coax
cable (29pF/foot for RG-58) will not load the amplifier
when the coaxial cable or transmission line is terminated in
its characteristic impedance.
COMPENSATION
The OPA648 is internally compensated and is stable in unity
gain with a phase margin of approximately 68
. (Note that,
from a stability standpoint, an inverting gain of 1V/V is
equivalent to a noise gain of 2.) Gain and phase response for
other gains are shown in the Typical Performance Curves.
The high-frequency response of the OPA648 in a good
layout is very flat with frequency.
DISTORTION
The OPA648's harmonic distortion characteristics into a
100
load are shown vs frequency and power output in the
Typical Performance Curves. Distortion can be further im-
proved by increasing the load resistance as illustrated in
FIGURE 5. Driving Capacitive Loads.
OPA648
C
L
R
L
R
OUT
(R
OUT
typically 5
to 40
)
243
243
FIGURE 6. 5MHz Harmonic Distortion vs Load Resistance.
0
10
20
30
40
50
60
70
80
90
1
10
100
1k
10k
5MHz HARMONIC DISTORTION vs LOAD RESISTANCE
(f
O
= 5MHz, V
O
= 2Vp-p)
Load Resistance (
)
Harmonic Distortion (dBc)
2f
O
3f
O
DIFFERENTIAL GAIN AND PHASE
Differential Gain (DG) and Differential Phase (DP) are among
the more important specifications for video applications. DG
is defined as the percent change in closed-loop gain over a
specified change in output voltage level. DP is defined as the
change in degrees of the closed-loop phase over the same
output voltage change. Both DG and DP are specified at the
NTSC sub-carrier frequency of 3.58MHz and the PAL
subcarrier of 4.43MHz. All NTSC measurements were
performed using a Tektronix model VM700A Video
Measurement Set.
DG and DP of the OPA648 were measured with the amplifier
in a gain of +2V/V with 75
input impedance and the output
back-terminated in 75
. The input signal selected from the
generator was a 0V to 1.4V modulated ramp with sync pulse.
With these conditions the test circuit shown in Figure 7
delivered a 100IRE modulated ramp to the 75
input of the
video analyzer. The signal averaging feature of the analyzer
was used to establish a reference against which the performance
of the amplifier was measured. Signal averaging was also used
to measure the DG and DP of the test signal in order to
FIGURE 7. Configuration for Testing Differential
Gain/Phase.
OPA648
75
75
243
243
75
75
TEK TSG 130A
TEK VM700A
OPA648
11
eliminate the generator's contribution to measured amplifier
performance. Typical performance of the OPA648 is 0.02%
differential gain and 0.02
differential phase to both NTSC
and PAL standards.
NOISE FIGURE
For RF applications, Noise Figure (NF) is often the preferred
noise specification instead of Noise Spectral Density since it
allows system noise performance to be more easily calcu-
lated. The OPA648's Noise Figure vs Source Resistance is
shown in Figure 8.
SPICE MODELS
Computer simulation using SPICE is often useful when
analyzing the performance of analog circuits and systems.
This is particularly true for video and RF amplifier circuits
where parasitic capacitance and inductance can have a major
effect on circuit performance. SPICE Macromodels using
PSpice are available for the OPA648. Contract Burr-Brown
applications departments to receive a SPICE Diskette.
DEMONSTRATION BOARDS
Demonstration boards to speed prototyping are available.
Refer to the DEM-OPA64X (LI-445) data sheet for details.
FIGURE 8. Noise Figure vs Source Resistance.
APPLICATIONS
OPA648
V
OUT
243
243
Video
Input
75
75
75
Transmission Line
75
FIGURE 9. Low Distortion Video Amplifier.
Source Resistance, R
s
(
)
10
100
1
10
100
Noise Figure (dB)
35
30
25
20
15
10
5
0
NF
dB
= 10LOG 1 +
e
n
2
+ (I
n
R
s
)
2
4KTR
S