1
OPA658
FEATURES
q
UNITY GAIN STABLE BANDWIDTH:
900MHz
q
LOW POWER: 50mW
q
LOW DIFFERENTIAL GAIN/PHASE ERRORS:
0.025%/0.02
q
HIGH SLEW RATE: 1700V/
s
q
GAIN FLATNESS: 0.1dB to 135MHz
q
HIGH OUTPUT CURRENT (80mA)
Wideband, Low Power Current Feedback
OPERATIONAL AMPLIFIER
APPLICATIONS
q
MEDICAL IMAGING
q
HIGH-RESOLUTION VIDEO
q
HIGH-SPEED SIGNAL PROCESSING
q
COMMUNICATIONS
q
PULSE AMPLIFIERS
q
ADC/DAC GAIN AMPLIFIER
q
MONITOR PREAMPLIFIER
q
CCD IMAGING AMPLIFIER
OPA658
DESCRIPTION
The OPA658 is an ultra-wideband, low power current
feedback video operational amplifier featuring high
slew rate and low differential gain/phase error. The
current feedback design allows for superior large sig-
nal bandwidth, even at high gains. The low differential
gain/phase errors, wide bandwidth and low quiescent
current make the OPA658 a perfect choice for numer-
ous video, imaging and communications applications.
The OPA658 is optimized for low gain operation and
is also available in dual (OPA2658) and quad
(OPA4658) configurations.
C
COMP
Current Mirror
In
In
+
V
OUT
I
BIAS
I
BIAS
+V
S
V
S
Current Mirror
Buffer
OPA658
OPA658
International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
1994 Burr-Brown Corporation
PDS-1268F
Printed in U.S.A. March, 1998
2
OPA658
FREQUENCY RESPONSE
Closed-Loop Bandwidth
(2)
G = +1
(4)
900
T
(1)
MHz
G = +2
680
400
T
MHz
G = +5
370
T
MHz
G = +10
200
T
MHz
Slew Rate
(3)
G = +2, 2V Step
1700
1000
T
V/
s
At Minimum Specified Temperature
1500
900
T
V/
s
Settling Time: 0.01%
G = +2, 2V Step
15
T
ns
0.1%
G = +2, 2V Step
11.5
T
ns
1%
G = +2, 2V Step
6
T
ns
Spurious Free Dynamic Range
f = 5MHz, G = +2, V
O
= 2Vp-p
68
T
dBc
f = 20MHz, G= +2, V
O
= 2Vp-p
56
T
dBc
Third Order Intercept Point
f = 10MHz, 4dBm Each Tone
40
T
dBm
Differential Gain
G = +2, NTSC, V
O
= 1.4Vp-p, R
L
= 150
0.025
T
%
Differential Phase
G = +2, NTSC, V
O
= 1.4Vp-p, R
L
= 150
0.02
T
degrees
Bandwidth for 0.1dB Flatness
G = +2
135
(5)
T
MHz
OFFSET VOLTAGE
Input Offset Voltage
V
CM
= 0V
3
5.5
2
4.5
mV
Over Temperature Range
5
8
4
7
mV
Power Supply Rejection Ratio
V
S
=
4.7 to
5.5V
55
64
58
67
dB
INPUT BIAS CURRENT
Non-Inverting
V
CM
= 0V
5.7
30
T
18
A
Over Temperature Range
10
80
T
35
A
Inverting
V
CM
= 0V
1.1
35
T
T
A
Over Temperature Range
30
75
T
T
A
NOISE
Input Voltage Noise Density
f = 100Hz
16
T
nV/
Hz
f = 2kHz
4.9
T
nV/
Hz
f = 10kHz
3.2
T
nV/
Hz
f = 1MHz
3.2
T
nV/
Hz
f
B
= 100Hz to 200MHz
45.3
T
Vrms
Input Bias Current Noise Density
Inverting: f = 1MHz
32
T
pA/
Hz
Non-Inverting: f = 1MHz
11.9
T
pA/
Hz
INPUT VOLTAGE RANGE
Common-Mode Input Range
Over Temperature Range
2.5
2.9
T
T
V
Common-Mode Rejection
V
CM
=
1V
45
50
T
T
dB
INPUT IMPEDANCE
Non-Inverting
500 || 1
T
k
|| pF
Inverting
50
T
OPEN-LOOP TRANSRESISTANCE
Open-Loop Transresistance
V
O
=
2V, R
L
= 100
150
190
200
250
k
Over Temperature Range
V
O
=
2V, R
L
= 100
100
150
k
OUTPUT
Voltage Output
No Load
2.7
2.9
T
T
V
Over Temperature Range
2.5
2.75
T
T
V
Voltage Output
R
L
= 250
2.7
2.9
T
T
V
Over Temperature Range
2.5
2.7
T
T
V
Voltage Output
R
L
= 100
2.2
2.8
T
T
V
Over Temperature Range
2.0
2.5
T
T
V
Output Current, Sourcing
80
120
T
T
mA
Over Temperature
70
T
mA
Output Current, Sinking
60
80
T
T
mA
Over Temperature
35
T
mA
Short Circuit Current
150
T
mA
Output Resistance
0.1MHz, G = +2
0.02
T
POWER SUPPLY
Specified Operating Voltage
5
T
V
Operating Voltage Range
4.5
5.5
T
T
V
Quiescent Current
V
S
=
5V
5
7.75
4.5
5.75
mA
Over Temperature Range
5.5
8.5
4.7
6.5
mA
TEMPERATURE RANGE
Specification: P, U, N, UB, NB
40
+85
T
T
C
Thermal Resistance,
JA
P
8-Pin DIP
100
T
C/W
U
SO-8
125
T
C/W
N
SOT23-5
150
T
C/W
NOTES: (1) An asterisk (
T
) specifies the same value as the grade to the left. (2) Frequency response can be strongly influenced by PC board parasitics. The
demonstration boards show low parasitic layouts for this part. Refer to the demonstration board layout for details. (3) Slew rate is rate of change from 10% to 90%
of output voltage step. (4) At G = +1, R
FB
= 560
for PDIP and 402
for SO-8. (5) This specification is PC board layout dependent.
SPECIFICATIONS
At T
A
= +25
C, V
S
=
5V, R
L
= 100
,
and R
FB
= 402
,
unless otherwise noted.
OPA658P, U, N
OPA658UB, NB
PARAMETER
CONDITION
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
3
OPA658
1
2
3
4
8
7
6
5
NC
+V
S
Output
NC
NC
Input
+Input
V
S
1
2
3
5
4
+V
S
Input
Output
V
S
+Input
Top View
DIP/SO-8
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
PIN CONFIGURATION
Supply ...............................................................................................
5.5V
Internal Power Dissipation .......................... See Thermal Considerations
Differential Input Voltage ..................................................................
1.2V
Input Voltage Range ............................................................................
V
S
Storage Temperature Range: P, U, UB, N, NB ............ 40
C to +125
C
Lead Temperature (soldering, 10s) .............................................. +300
C
(soldering, SOIC 3s) ...................................................................... +260
C
Junction Temperature (T
J
) ............................................................ +175
C
ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-Brown
Corporation recommends that all integrated circuits be handled
and stored using appropriate ESD protection methods.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet published speci-
fications.
SOT23-5
PACKAGE
DRAWING
TEMPERATURE
PACKAGE
ORDERING
PRODUCT
PACKAGE
NUMBER
(1)
RANGE
MARKING
(2)
NUMBER
(3)
OPA658U
SO-8 Surface Mount
182
40
C to +85
C
OPA658U
OPA658U
OPA658UB
SO-8 Surface Mount
182
40
C to +85
C
OPA658UB
OPA658UB
OPA658N
5-pin SOT23-5
331
40
C to +85
C
A58
OPA658N-250
OPA658N-3k
OPA658NB
5-pin SOT23-5
331
40
C to +85
C
A58B
OPA658NB-250
OPA658NB-3k
OPA658P
8-Pin Plastic DIP
006
40
C to +85
C
OPA658P
OPA658P
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) The "B" grade of the SO-8 will be
marked with a "B" by pin 8. The "B" grade of the SOT23-5 will be marked with a "B" near pins 3 and 4. (3) The SOT23-5 is only available on a 7" tape and reel (e.g. ordering
250 pieces of "OPA658N-250" will get a single 250 piece tape and reel. Ordering 3000 pieces of "OPA658N-3k" will get a single 3000 piece tape and reel). Please refer
to Appendix B of Burr-Brown IC Data Book for detailed Tape and Reel Mechanical information.
PACKAGE/ORDERING INFORMATION
4
OPA658
TYPICAL PERFORMANCE CURVES
At T
A
= +25
C, V
S
=
5V, R
L
= 100
, and R
FB
= 402
,
unless otherwise noted.
55
50
45
40
35
30
25
4
3
2
1
0
1
2
3
4
COMMON-MODE REJECTION
vs INPUT COMMON-MODE VOLTAGE
Common-Mode Rejection (dB)
Common-Mode Voltage (V)
SUPPLY CURRENT vs TEMPERATURE
5
4
75
50
25
0
25
50
75
100
125
Ambient Temperature (C)
Supply Current (mA)
NON-INVERTING INPUT BIAS CURRENT
vs TEMPERATURE
75
50
25
0
25
50
75
100
125
Ambient Temperature (C)
Non-Inverting Input Bias Current I
B
+ (A)
10
8
6
4
2
3.20
3.10
3.0
2.90
2.80
2.70
2.60
2.50
2.40
2.30
OUTPUT SWING vs TEMPERATURE
Temperature (C)
60
40
20
0
20
40
60
80
100
Output Swing (V)
+V
O
V
O
R
L
= 250
R
L
= 100
V
O
+V
O
PSRR AND CMR vs TEMPERATURE
75
70
65
60
55
50
45
75
50
25
0
25
50
75
100
125
PSRR , CMR (dB)
CMR
PSR
Temperature (C)
PSR+
PSRR
120
110
100
90
80
70
75
50
25
0
25
50
75
100
125
OUTPUT CURRENT vs TEMPERATURE
Ambient Temperature (C)
Output Current (mA)
I
O
I
O
+
5
OPA658
At T
A
= +25
C, V
S
=
5V, R
L
= 100
, and R
FB
= 402
,
unless otherwise noted.
TYPICAL PERFORMANCE CURVES
(CONT)
10
6
10
5
10
4
10
3
10
2
10
1
1
0
45
90
135
180
225
1k
10k
100k
1M
10M
100M
1G
OPEN-LOOP TRANSIMPEDANCE AND PHASE
vs FREQUENCY
Frequency (Hz)
Transimpedance (
)
Open-Loop Phase ()
Phase
Transimpedance
INVERTING INPUT BIAS CURRENT
vs TEMPERATURE
75
50
25
0
25
50
75
100
125
Temperature (C)
Inverting Input Bias Current I
B
(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
Frequency (Hz)
60
40
20
0
20
40
60
0
45
90
135
180
225
1k
10k
100k
1M
10M
100M
1G
Open-Loop Gain (dB)
Open-Loop Phase ()
Gain
Phase
6
3
0
3
6
9
1M
10M
100M
1G
CLOSED-LOOP BANDWIDTH
Frequency (Hz)
Gain (dB)
SO-8 Bandwidth = 881MHz, R
FB
= 402
G = +1
DIP Bandwidth = 949MHz, R
FB
= 560
9
6
3
0
3
6
1M
10M
100M
1G
CLOSED-LOOP BANDWIDTH
Frequency (Hz)
Gain (dB)
DIP Bandwidth = 682MHz
SO-8 Bandwidth = 680MHz
G = +2
20
17
14
11
8
5
2
1M
10M
100M
1G
CLOSED-LOOP BANDWIDTH
Frequency (Hz)
Gain (dB)
SO-8/DIP Bandwidth= 372MHz
G = +5
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