OPT202
1
OPT202
PHOTODIODE
WITH ON-CHIP AMPLIFIER
1M
(Pin available on DIP only)
OPT202
3pF
175
2
8
(1)
(2)
(3) 3
5
(5)
4 (4)
1
V
O
V
(SIP)
DIP
V+
SPECTRAL RESPONSIVITY
Voltage Output (V/W)
Wavelength (nm)
100
200
300
400 500
600
700 800
900 1000 1100
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
Photodiode Responsivity (A/W)
Infrared
Blue
Green
Yellow
Red
Ultraviolet
Using Internal
1M
Resistor
FEATURES
q
BANDWIDTH: 50kHz
q
PHOTODIODE SIZE: 0.090 x 0.090 inch
(2.29 x 2.29mm)
q
1M
FEEDBACK RESISTOR
q
HIGH RESPONSIVITY: 0.45A/W
(650nm)
q
LOW DARK ERRORS: 2mV
q
WIDE SUPPLY RANGE:
2.25 to
18V
q
LOW QUIESCENT CURRENT: 400
A
q
TRANSPARENT 8-PIN DIP AND 5-PIN SIP
q
HERMETIC 8-PIN CERAMIC DIP
APPLICATIONS
q
MEDICAL INSTRUMENTATION
q
LABORATORY INSTRUMENTATION
q
POSITION AND PROXIMITY SENSORS
q
PHOTOGRAPHIC ANALYZERS
q
SMOKE DETECTORS
DESCRIPTION
The OPT202 is an opto-electronic integrated circuit
containing a photodiode and transimpedance
amplifier on a single dielectrically isolated chip. The
transimpedance amplifier consists of a precision FET-
input op amp and an on-chip metal film resistor. The
0.09
x
0.09 inch photodiode is operated at zero bias for
excellent linearity and low dark current.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered in discrete de-
signs such as leakage current errors, noise pick-up and
gain peaking due to stray capacitance.
The OPT202 operates over a wide supply range (
2.25
to
18V) and supply current is only 400
A. It is
packaged in a transparent plastic 8-pin DIP or 5-pin
SIP, specified for the 0
C to +70
C temperature range
as well as a hermetic ceramic 8-pin DIP with a glass
window, specified for the 40
C to +85
C tempera-
ture range.
PDS-1200E
International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
FPO
OPT202
2
OPT202P, W, G
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
RESPONSIVITY
Photodiode Current
650nm
0.45
A/W
Voltage Output
650nm
0.45
V/
W
vs Temperature
100
ppm/
C
Unit-to-Unit Variation
650nm
5
%
Nonlinearity
(1)
FS Output = 10V
0.01
% of FS
Photodiode Area
(0.090 x 0.090in)
0.008
in
2
(2.29 x 2.29mm)
5.2
mm
2
DARK ERRORS, RTO
(2)
Offset Voltage, Output: P, W Packages
0.5
2
mV
G Package
0.5
3
mV
vs Temperature
10
V/
C
vs Power Supply
V
S
=
2.25V to
18V
10
100
V/V
Voltage Noise
Measured BW = 0.1Hz to 100kHz
1
mVr ms
RESISTOR--1M
Internal
Resistance
1
M
Tolerance: P, G Packages
0.5
2
%
W Package
0.5
%
vs Temperature
50
ppm/
C
FREQUENCY RESPONSE
Bandwidth, Large or Small-Signal, 3dB
50
kHz
Rise Time, 10% to 90%
10
s
Settling Time, 1%
FS to Dark
10
s
0.1%
FS to Dark
20
s
0.01%
FS to Dark
40
s
Overload Recovery Time (to 1%)
100% Overdrive, V
S
=
15V
44
s
100% Overdrive, V
S
=
5V
100
s
100% Overdrive, V
S
=
2.25V
240
s
OUTPUT
Voltage Output
R
L
= 10k
(V+) 1.25
(V+) 1
V
R
L
= 5k
(V+) 2
(V+) 1.5
V
Capacitive Load, Stable Operation
10
nF
Short-Circuit Current
18
mA
POWER SUPPLY
Specified Operating Voltage
15
V
Operating Voltage Range
2.25
18
V
Quiescent Current
V
O
= 0
400
500
A
TEMPERATURE RANGE
Specification; P, W Packages
0
+70
C
G Package
40
+85
C
Operating,
P, W Packages
0
+70
C
G Package
55
+125
C
Storage
P, W Packages
25
+85
C
G Package
55
+125
C
Thermal Resistance,
JA
100
C/W
NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.
SPECIFICATIONS
ELECTRICAL
At T
A
= +25
C, V
S
=
15V,
= 650nm, internal 1M
feedback resistor, unless otherwise noted.
OPT202
3
SPECIFICATIONS
(CONT)
ELECTRICAL
Op Amp Section of OPT202
(1)
At T
A
= +25
C, V
S
=
15V, unless otherwise noted.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
OPT202 Op Amp
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage
0.5
mV
vs Temperature
5
V/
C
vs Power Supply
V
S
=
2.25V to
18V
10
V/V
Input Bias Current
1
pA
vs Temperature
doubles every 10
C
NOISE
Input Voltage Noise
Voltage Noise Density, f = 10Hz
30
nV/
Hz
f = 100Hz
25
nV/
Hz
f = 1kHz
15
nV/
Hz
Current Noise Density, f = 1kHz
0.8
fA/
Hz
INPUT VOLTAGE RANGE
Common-Mode Input Range
14.4
V
Common-Mode Rejection
106
dB
INPUT IMPEDANCE
Differential
10
12
||3
|| pF
Common-Mode
10
12
||3
|| pF
OPEN-LOOP GAIN
Open-Loop Voltage Gain
120
dB
FREQUENCY RESPONSE
Gain-Bandwidth Product
16
MHz
Slew Rate
6
V/
s
Settling Time 0.1%
4
s
0.01%
5
s
OUTPUT
Voltage Output
R
L
= 10k
(V+) 1.25
(V+) 1
V
R
L
= 5k
(V+) 2
(V+) 1.5
V
Short-Circuit Current
18
mA
POWER SUPPLY
Specified Operating Voltage
15
V
Operating Voltage Range
2.25
18
V
Quiescent Current
I
O
= 0
400
500
A
NOTE: (1) Op amp specifications provided for information and comparison only.
PHOTODIODE SPECIFICATIONS
At T
A
= +25
C, unless otherwise noted.
Photodiode of OPT202
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Photodiode Area
(0.090
x
0.090in)
0.008
in
2
(2.29
x
2.29mm)
5.2
mm
2
Current Responsivity
650nm
0.45
A/W
Dark Current
V
D
= 0V
(1)
500
fA
vs Temperature
doubles every 10
C
Capacitance
V
D
= 0V
(1)
600
pF
NOTE: (1) Voltage Across Photodiode.
OPT202
4
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PIN CONFIGURATIONS
Top View
DIP
V+
In
V
1M
Feedback
Common
NC
NC
Output
1
2
3
4
8
7
6
5
(1)
NOTE: (1) Photodiode location.
Top View
SIP
Common
V+
V
1M
Feedback
Output
1
2
3
4
5
(1)
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ...................................................................................
18V
Input Voltage Range (Common Pin) ....................................................
V
S
Output Short-Circuit (to ground) ............................................... Continuous
Operating Temperature: P, W ........................................... 25
C to +85
C
G ............................................. 55
C to +125
C
Storage Temperature: P, W ........................................... 25
C to +85
C
G ............................................. 55
C to +125
C
Junction Temperature: P, W .......................................................... +85
C
G ............................................................. +150
C
Lead Temperature (soldering, 10s) ................................................ +300
C
(Vapor-Phase Soldering Not Recommended on Plastic Packages)
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT
PACKAGE
NUMBER
(1)
OPT202P
8-Pin Plastic DIP
006-1
OPT202W
5-Pin Plastic SIP
321
OPT202G
8-Pin Ceramic DIP
161-1
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
MOISTURE SENSITIVITY
AND SOLDERING
Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that plastic devices be baked-out
at 85
C for 24 hours.
The fire-retardant fillers used in black plastic are not compat-
ible with clear molding compound. The OPT202 plastic
packages cannot meet flammability test, UL-94.
OPT202
5
TYPICAL PERFORMANCE CURVES
At T
A
= +25
C, V
S
=
15V,
= 650nm, unless otherwise noted.
RESPONSE vs INCIDENT ANGLE
Relative Output
Angle of Incidence
0
10
20
30
40
50
60
70
80
90
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
02.0
0.10
0
Ceramic
DIP Package
X
Y
X
and
Y
VOLTAGE RESPONSIVITY vs RADIANT POWER
Radiant Power (W)
Output Voltage (V)
0.01
0.1
10
100
1k
1
10
1
0.1
0.01
0.001
R
F
= 1M
R
F
= 100k
R
F
= 10M
= 650nm
VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY
Responsivity (V/W)
Frequency (Hz)
100
10
1
0.1
0.01
0.001
1k
10k
100k
10M
1M
= 650nm
R
F
= 3.3M
R
F
= 10M
R
F
= 1M
R
F
= 330k
C
EXT
= 3pF
VOLTAGE RESPONSIVITY vs IRRADIANCE
Irradiance (W/m
2
)
Output Voltage (V)
0.001
0.01
1
10
100
0.1
10
1
0.1
0.01
0.001
R
F
= 1M
R
F
= 100k
R
F
= 10M
= 650nm
NORMALIZED SPECTRAL RESPONSIVITY
Normalized Current or Voltage Output
Wavelength (nm)
100
200
300
400 500
600
700 800
900 1000 1100
1.0
0.8
0.6
0.4
0.2
0
650nm
(0.45A/W)
(0.48A/W)
RESPONSE vs INCIDENT ANGLE
Relative Response
Incident Angle ()
0
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
Y
X
1.0
0.8
0.6
0.4
0.2
0
Y
X
Y
X
SIP Package
Plastic
DIP Package
OPT202
6
DISTRIBUTION OF RESPONSIVITY
Units (%)
Responsivity (A/W)
0.43
60
50
40
30
20
10
0
0.44
0.45
0.46
0.47
0.48
Distribution Totals
100%
= 650nm
Laboratory Test
Data
NOISE EFFECTIVE POWER
vs MEASUREMENT BANDWIDTH
Frequency (Hz)
Noise Effective Power (W)
1
10
1k
10k
100k
100
10
7
10
8
10
9
10
10
10
11
10
12
10
13
10
14
1M
Dotted lines indicate
noise measured beyond
the signal bandwidth.
= 650nm
R
F
= 100k
R
F
= 1M
R
F
= 10M
R
F
= 100M
OUTPUT NOISE VOLTAGE
vs MEASUREMENT BANDWIDTH
Frequency (Hz)
Noise Voltage (Vrms)
1
10
1k
10k
100k
100
10
2
10
3
10
4
10
5
10
6
10
7
1M
Dotted lines indicate
noise measured beyond
the signal bandwidth.
R
F
= 100k
R
F
= 1M
R
F
= 100M
R
F
= 10M
QUIESCENT CURRENT vs TEMPERATURE
Quiescent Current (mA)
Temperature (C)
75
0.6
0.5
0.4
0.3
0.2
0.1
0
50
25
0
25
50
75
100
125
V
S
= 15V
V
S
= 2.25V
Dice
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25
C, V
S
=
15V,
= 650nm, unless otherwise noted.
LARGE-SIGNAL RESPONSE
2V/div
10
s/div
SMALL-SIGNAL RESPONSE
20mV/div
10
s/div
OPT202
7
some degree, the OPT202 op amp circuitry is designed to
minimize this effect. Sensitive junctions are shielded with
metal, and differential stages are cross-coupled. Furthermore,
the photodiode area is very large relative to the op amp input
circuitry making these effects negligible.
If your light source is focused to a small area, be sure that
it is properly aimed to fall on the photodiode. If a narrowly
focused light source were to miss the photodiode area and
fall only on the op amp circuitry, the OPT202 would not
perform properly. The large (0.090
x
0.090 inch) photodiode
area allows easy positioning of narrowly focused light sources.
The photodiode area is easily visible--it appears very dark
compared to the surrounding active circuitry.
The incident angle of the light source also affects the
apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is simply due to the smaller
effective light gathering area of the photodiode (proportional
to the cosine of the angle). At a greater incident angle, light
is diffused by the side of the package. These effects are
shown in the typical performance curve "Response vs Incident
Angle."
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required to operate the
OPT202. Applications with high-impedance power supplies
may require decoupling capacitors located close to the
device pins as shown. Output is zero volts with no light and
increases with increasing illumination.
Photodiode current, I
D
, is proportional to the radiant power
or flux (in watts) falling on the photodiode. At a wavelength
of 650nm (visible red) the photodiode Responsivity, R
I
, is
approximately 0.45A/W. Responsivity at other wavelengths
is shown in the typical performance curve "Responsivity vs
Wavelength."
The typical performance curve "Output Voltage vs Radiant
Power" shows the response throughout a wide range of
radiant power. The response curve "Output Voltage vs
Irradiance" is based on the photodiode area of 5.23
x
10
6
m
2
.
The OPT202's voltage output is the product of the photodiode
current times the feedback resistor, (I
D
R
F
). The internal
feedback resistor is laser trimmed to 1M
2%. Using this
resistor, the output voltage responsivity, R
V
, is approximately
0.45V/
W at 650nm wavelength.
An external resistor can be connected to set a different
voltage responsivity. Best dynamic performance is achieved
by connecting R
EXT
in series (for R
F
> 1M
), or in parallel
(for R
F
< 1M
), with the internal resistor as shown in
Figure 2. Placing the external resistor in parallel with the
internal resistor requires the DIP package. These connections
take advantage of on-chip capacitive guarding of the internal
resistor, which improves dynamic performance. For values
of R
F
less than 1M
, an external capacitor, C
EXT
, should be
connected in parallel with R
F
(see Figure 2). This capacitor
eliminates gain peaking and prevents instability. The value
of C
EXT
can be read from the table in Figure 2.
LIGHT SOURCE POSITIONING
The OPT202 is 100% tested with a light source that uniformly
illuminates the full area of the integrated circuit, including
the op amp. Although all IC amplifiers are light-sensitive to
I
D
is proportional
to light intensity
(radiant power).
FIGURE 1. Basic Circuit Connections.
1M
(Pin available on DIP only)
OPT202
3pF
175
V
O
15V
+15V
0.1F 0.1F
V
O
= I
D
R
F
R
F
I
D
I
D
(0V)
FIGURE 2. Using External Feedback Resistor.
EQUIVALENT R
F
C
EXT
100M
(1)
10M
(1)
1M
(1)
330k
2pF
100k
(2)
NOTES: (1) No C
EXT
required. (2)
Not recommended due to possible
op amp instability.
1M
OPT202
3pF
175
8
3
5
4
1
V
O
= I
D
R
F
Circuit Requires
DIP Package
V
V+
R
EXT
C
EXT
R
F
= R
EXT
|| 1M
For R
F
< 1M
1M
OPT202
175
V
O
= I
D
R
F
V
V+
R
F
= R
EXT
+ 1M
For R
F
> 1M
R
EXT
2
OPT202
8
DARK ERRORS
The dark errors in the specification table include all sources.
The dominant error source is the input offset voltage of the
op amp. Photodiode dark current and input bias current of
the op amp are in the 2pA range and contribute virtually no
offset error at room temperature. Dark current and input bias
current double for each 10
C above 25
C. At 70
C, the error
current can be approximately 100pA. This would produce a
1mV offset with R
F
= 10M
. The OPT202 is useful with
feedback resistors of 100M
or greater at room temperature.
The dark output voltage can be trimmed to zero with the
optional circuit shown in Figure 3.
When used with very large feedback resistors, tiny leakage
currents on the circuit board can degrade the performance of
the OPT202. Careful circuit board design and clean assembly
procedures will help achieve best performance. A "guard
ring" on the circuit board can help minimize leakage to the
critical non-inverting input (pin 2). This guard ring should
encircle pin 2 and connect to Common, pin 8.
simple R/C circuit with a 3dB cutoff frequency of 50kHz.
This yields a rise time of approximately 10
s (10% to 90%).
Dynamic response is not limited by op amp slew rate. This
is demonstrated by the dynamic response oscilloscope
photographs showing virtually identical large-signal and
small-signal response.
Dynamic response will vary with feedback resistor value as
shown in the typical performance curve "Voltage Output
Responsivity vs Frequency." Rise time (10% to 90%) will
vary according to the 3dB bandwidth produced by a given
feedback resistor value--
where:
t
R
is the rise time (10% to 90%)
f
C
is the 3dB bandwidth
NOISE PERFORMANCE
Noise performance of the OPT202 is determined by the op
amp characteristics in conjunction with the feedback
components and photodiode capacitance. The typical
performance curve "Output Noise Voltage vs Measurement
Bandwidth" shows how the noise varies with R
F
and measured
bandwidth (1Hz to the indicated frequency). The signal
bandwidth of the OPT202 is indicated on the curves. Noise
can be reduced by filtering the output with a cutoff frequency
equal to the signal bandwidth.
Output noise increases in proportion to the square-root of the
feedback resistance, while responsivity increases linearly
with feedback resistance. So best signal-to-noise ratio is
achieved with large feedback resistance. This comes with
the trade-off of decreased bandwidth.
The noise performance of a photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power which would produce an output signal equal
to the noise level. NEP has the units of radiant power
(watts). The typical performance curve "Noise Effective
Power vs Measurement Bandwidth" shows how NEP varies
with R
F
and measurement bandwidth.
FIGURE 4. Responsivity (Gain) Adjustment Circuit.
FIGURE 3. Dark Error (Offset) Adjustment Circuit.
LINEARITY PERFORMANCE
Current output of the photodiode is very linear with radiant
power throughout a wide range. Nonlinearity remains below
approximately 0.01% up to 100
A photodiode current. The
photodiode can produce output currents of 10mA or greater
with high radiant power, but nonlinearity increases to several
percent in this region.
This very linear performance at high radiant power assumes
that the full photodiode area is uniformly illuminated. If the
light source is focused to a small area of the photodiode,
nonlinearity will occur at lower radiant power.
DYNAMIC RESPONSE
Using the internal 1M
resistor, the dynamic response of
the photodiode/op amp combination can be modeled as a
t
R
0. 35
f
C
(1)
1M
OPT202
3pF
175
V
O
V
V+
0.01F
500
V+
V
100A
1/2 REF200
100
100
100A
1/2 REF200
Adjust dark output for 0V.
Trim Range: 7mV
1M
OPT202
3pF
175
V
O
V
V+
10k
5k
Gain Adjustment
+50%; 0%
R
F
OPT202
9
FIGURE 5. "T" Feedback Network.
FIGURE 6. Current Output Circuit.
FIGURE 7. Single Power Supply Operation.
FIGURE 8. DC Restoration Rejects Unwanted Steady-State
Background Light.
Other application circuits can be seen in the
OPT209 data sheet.
1M
OPT202
3pF
175
V
V+
R
1
19k
R
F
R
2
1k
V
O
= I
D
R
F
R
1
+ R
2
R
2
Advantages: High gain with low resistor values.
Less sensitive to circuit board leakage.
Disadvantage: Higher offset and noise than by using high
value for R
F
.
1M
OPT202
3pF
175
R
1
1k
15V
+15V
R
F
I
D
I
O
5mA
I
O
= I
D
1 +
R
F
R
1
1M
OPT202
3pF
175
V
O
= I
D
R
F
V
Z
V+
R
F
0.1F
(pesudo-ground)
+
V
Z
(1)
3.3V
NOTE: (1) Zener diode or other shunt regulator.
5k
1M
OPT202
3pF
175
2
8
5
4
V
O
See AB-061 for details.
Circuit requires DIP package.
C
1
0.1F
R
2
1M
R
3
100k
R
1
1M
C
2
0.1F
A
1
R
1
2
R
2
R
3
C
2
f
3dB
=
20dB/decade
= 16Hz
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