1994 Burr-Brown Corporation

PDS-1232D

Printed in U.S.A. March, 1997

OPT209

FPO

70%

PHOTODIODE

WITH ON-CHIP AMPLIFIER

OPT209

10pF

175

V+

FEATURES

PHOTODIODE SIZE: 0.090 x 0.090 inch
(2.29 x 2.29mm)

FEEDBACK RESISTOR

HIGH RESPONSIVITY: 0.45A/W

(650nm)

LOW DARK ERRORS: 2mV

BANDWIDTH: 16kHz

WIDE SUPPLY RANGE:

2.25 to

18V

LOW QUIESCENT CURRENT: 400

TRANSPARENT 8-PIN DIP

APPLICATIONS

MEDICAL INSTRUMENTATION

LABORATORY INSTRUMENTATION

POSITION AND PROXIMITY SENSORS

PHOTOGRAPHIC ANALYZERS

SMOKE DETECTORS

DESCRIPTION

The OPT209 is an opto-electronic integrated circuit
containing a photodiode and transimpedance
amplifier on a single dielectrically isolated chip. The
transimpedance amplifier consists of a precision FET-
input op amp and an on-chip metal film resistor. The
0.09 x 0.09 inch photodiode is operated at zero bias for
excellent linearity and low dark current.

The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered in discrete de-
signs such as leakage current errors, noise pick-up and
gain peaking due to stray capacitance.

The OPT209 operates over a wide supply range (

2.25

18V) and supply current is only 400

A. It is

packaged in a transparent plastic 8-pin DIP, specified
for the 0

C to 70

C temperature range.

SPECTRAL RESPONSIVITY

Voltage Output (V/µW)

Wavelength (nm)

100

200

300

400 500

600

700 800

900 1000 1100

0.5

0.4

0.3

0.2

0.1

0.5

0.4

0.3

0.2

0.1

Photodiode Responsivity (A/W)

Infrared

Blue

Green

Yellow

Red

Ultraviolet

Using Internal
1M

Resistor

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OPT209

OPT209P

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

RESPONSIVITY
Photodiode Current

650nm

0.45

A/W

Voltage Output

650nm

0.45

vs Temperature

100

ppm/

Unit-to-Unit Variation

650nm

Nonlinearity

(1)

FS Output = 10V

0.01

% of FS

Photodiode Area

(0.090 x 0.090in)

0.008

(2.29 x 2.29mm)

5.2

DARK ERRORS, RTO

(2)

Offset Voltage, Output

0.5

vs Temperature

vs Power Supply

2.25V to

18V

100

V/V

Voltage Noise

Measured BW = 0.1 to 100kHz

350

Vrms

RESISTOR--1M

Internal

Resistance

Tolerance

0.5

vs Temperature

ppm/

FREQUENCY RESPONSE
Bandwidth, Large or Small-Signal, 3dB

kHz

Rise Time, 10% to 90%

Settling Time, 1%

FS to Dark

0.1%

FS to Dark

0.01%

FS to Dark

100

Overload Recovery Time (to 1%)

100% 0verdrive, V

15V

100% 0verdrive, V

100

100% 0verdrive, V

2.25V

240

OUTPUT
Voltage Output

= 10k

(V+) 1.25

(V+) 1

= 5k

(V+) 2

(V+) 1.5

Capacitive Load, Stable Operation

Short-Circuit Current

POWER SUPPLY
Specified Operating Voltage

Operating Voltage Range

2.25

Quiescent Current

= 0

400

500

TEMPERATURE RANGE
Specification, Operating

+70

Storage

+85

Thermal Resistance,

100

C/W

NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.

SPECIFICATIONS

ELECTRICAL

At T

= +25

C, V

15V,

= 650nm, internal 1M

feedback resistor, unless otherwise noted.

PHOTODIODE SPECIFICATIONS

At T

= +25

C, unless otherwise noted.

Photodiode of OPT209

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Photodiode Area

(0.090 x 0.090in)

0.008

(2.29 x 2.29mm)

5.1

Current Responsivity

650nm

0.45

A/W

Dark Current

= 0V

(1)

500

vs Temperature

doubles every 10

Capacitance

= 0V

(1)

600

NOTE: (1) Voltage Across Photodiode.

OPT209

SPECIFICATIONS

(CONT)

ELECTRICAL

Op Amp Section of OPT209

(1)

At T

= +25

C, V

15V, unless otherwise noted.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.

OPT209 Op Amp

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

INPUT
Offset Voltage

0.5

vs Temperature

vs Power Supply

2.25V to

18V

V/V

Input Bias Current

vs Temperature

doubles every 10

NOISE
Input Voltage Noise
Voltage Noise Density, f=10Hz

nV/

f=100Hz

nV/

f=1kHz

nV/

Current Noise Density, f=1kHz

0.8

fA/

INPUT VOLTAGE RANGE
Common-Mode Input Range

14.4

Common-Mode Rejection

106

INPUT IMPEDANCE
Differential

||3

||pF

Common-Mode

||3

||pF

OPEN-LOOP GAIN
Open-Loop Voltage Gain

120

FREQUENCY RESPONSE
Gain-Bandwidth Product

MHz

Slew Rate

Settling Time 0.1%

0.01%

OUTPUT
Voltage Output

= 10k

(V+) 1.25

(V+) 1

= 5k

(V+) 2

(V+) 1.5

Short-Circuit Current

POWER SUPPLY
Specified Operating Voltage

Operating Voltage Range

2.25

Quiescent Current

= 0

400

500

NOTE: (1) Op amp specifications provided for information and comparison only.

OPT209

Supply Voltage ...................................................................................

18V

Input Voltage Range (Common Pin) ....................................................

Output Short-Circuit (to ground) ............................................... Continuous
Operating Temperature ..................................................... 25

C to +85

Storage Temperature ........................................................ 25

C to +85

Junction Temperature ...................................................................... +85

Lead Temperature (soldering, 10s) ................................................ +300

(Vapor-Phase Soldering Not Recommended)

ELECTROSTATIC
DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.

ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.

PIN CONFIGURATION

V+

Feedback

Common

Output

TOP VIEW

(1)

NOTE: (1) Photodiode location.

MOISTURE SENSITIVITY

AND SOLDERING

Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that devices be baked-out at
85

C for 24 hours.

The fire-retardant fillers used in black plastic are not compat-
ible with clear molding compound. The OPT209 cannot meet
flammability test, UL-94.

ABSOLUTE MAXIMUM RATINGS

PACKAGE DRAWING

PRODUCT

PACKAGE

NUMBER

(1)

OPT209P

8-Pin DIP

006-1

OPT209P-J

8-Lead Surface Mount

(2)

006-4

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book. (2) 8-Pin DIP with leads
formed for surface mounting.

PACKAGE INFORMATION

OPT209

NORMALIZED SPECTRAL RESPONSIVITY

Normalized Current or Voltage Output

Wavelength (nm)

100

200

300

400 500

600

700 800

900 1000 1100

1.0

0.8

0.6

0.4

0.2

650nm

(0.45A/W)

(0.48A/W)

RESPONSE vs INCIDENT ANGLE

Relative Response

Incident Angle (°)

1.0

0.8

0.6

0.4

0.2

±20

±40

±60

±80

1.0

0.8

0.6

0.4

0.2

TYPICAL PERFORMANCE CURVES

At T

= +25

C, V

15V,

= 650nm, unless otherwise noted.

VOLTAGE RESPONSIVITY vs RADIANT POWER

Radiant Power (µW)

Output Voltage (V)

0.01

0.1

100

0.1

0.01

0.001

= 1M

= 100k

= 10M

= 650nm

VOLTAGE RESPONSIVITY vs IRRADIANCE

Irradiance (W/m

)

Output Voltage (V)

0.001

0.01

100

0.1

0.01

0.001

= 1M

= 100k

= 10M

= 650nm

VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY

Responsivity (V/µW)

Frequency (Hz)

100

0.1

0.01

0.001

10k

100k

10M

= 33k

EXT

= 25pF

= 650nm

= 3.3M

= 10M

= 100k

EXT

= 9pF

= 1M

DISTRIBUTION OF RESPONSIVITY

Units (%)

Responsivity (A/W)

0.43

0.44

0.45

0.46

0.47

0.48

Distribution Totals

100%

= 650nm

Laboratory Test

Data

OPT209

NOISE EFFECTIVE POWER

vs MEASUREMENT BANDWIDTH

Frequency (Hz)

Noise Effective Power (W)

10k

100k

100

Dotted lines show
noise beyond the
signal bandwidth.

= 100M

= 1M

= 100k

= 10M

QUIESCENT CURRENT vs TEMPERATURE

Quiescent Current (mA)

Temperature (°C)

0.6

0.5

0.4

0.3

0.2

0.1

100

125

= ±15V

= ±2.25V

Dice

TYPICAL PERFORMANCE CURVES

(CONT)

At T

= +25

C, V

15V,

= 650nm, unless otherwise noted.

SMALL-SIGNAL RESPONSE

LARGE-SIGNAL RESPONSE

20mV/div

2V/div

s/div

OUTPUT NOISE VOLTAGE

vs MEASUREMENT BANDWIDTH

Frequency (Hz)

Noise Voltage (µVrms)

10k

100k

100

1000

100

0.1

Dotted lines show

noise beyond the

signal bandwidth.

= 100k

= 1M

= 100M

= 10M

OPT209

APPLICATIONS INFORMATION

Figure 1 shows the basic connections required to operate the
OPT209. Applications with high-impedance power supplies
may require decoupling capacitors located close to the
device pins as shown. Output is zero volts with no light and
increases with increasing illumination.

metal, and differential stages are cross-coupled. Furthermore,
the photodiode area is very large relative to the op amp input
circuitry making these effects negligible.

If your light source is focused to a small area, be sure that
it is properly aimed to fall on the photodiode. If a narrowly
focused light source were to miss the photodiode area and
fall only on the op amp circuitry, the OPT209 would not
perform properly. The large (0.090

0.090 inch) photodiode

area allows easy positioning of narrowly focused light sources.
The photodiode area is easily visible--it appears very dark
compared to the surrounding active circuitry.

The incident angle of the light source also affects the
apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is simply due to the smaller
effective light gathering area of the photodiode (proportional
to the cosine of the angle). At a greater incident angle, light
is diffused by the side of the package. These effects are
shown in the typical performance curve "Response vs Incident
Angle."

Photodiode current, I

, is proportional to the radiant power

or flux (in watts) falling on the photodiode. At a wavelength
of 650nm (visible red) the photodiode Responsivity, R

, is

approximately 0.45A/W. Responsivity at other wavelengths
is shown in the typical performance curve "Responsivity vs
Wavelength."

The typical performance curve "Output Voltage vs Radiant
Power" shows the response throughout a wide range of
radiant power. The response curve "Output Voltage vs
Irradiance" is based on the photodiode area of 5.23

The OPT209's voltage output is the product of the photodiode
current times the feedback resistor, (I

). The internal

feedback resistor is laser trimmed to 1M

2%. Using this

resistor, the output voltage responsivity, R

, is approximately

0.45V/

W at 650nm wavelength.

An external resistor can be connected to set a different
voltage responsivity. Best dynamic performance is achieved
by connecting R

EXT

in series (for R

> 1M

), or in parallel

(for R

< 1M

), with the internal resistor as shown in

Figure 2. These connections take advantage of on-chip
capacitive guarding of the internal resistor, which improves
dynamic performance. For values of R

less than 1M

, an

external capacitor, C

EXT

, should be connected in parallel

with R

(see Figure 2). This capacitor eliminates gain

peaking and prevents instability. The value of C

EXT

can be

read from the table in Figure 2.

LIGHT SOURCE POSITIONING

The OPT209 is 100% tested with a light source that uniformly
illuminates the full area of the integrated circuit, including
the op amp. Although all IC amplifiers are light-sensitive to
some degree, the OPT209 op amp circuitry is designed to
minimize this effect. Sensitive junctions are shielded with

is proportional

to light intensity
(radiant power).

OPT209

10pF

175

15V

+15V

0.1µF 0.1µF

= I

(0V)

FIGURE 1. Basic Circuit Connections.

FIGURE 2. Using External Feedback Resistor.

EQUIVALENT R

EXT

100M

(1)

10M

(1)

330k

(1)

100k

9pF

33k

25pF

20k

(2)

NOTES: (1) No C

EXT

required. (2)

Not recommended due to possible
op amp instability.

OPT209

3pF

175

= I

V+

EXT

= R

EXT

|| 1M

For R

< 1M

OPT209

175

= I

V+

= R

EXT

+ 1M

For R

> 1M

EXT

OPT209

DARK ERRORS

The dark errors in the specification table include all sources.
The dominant error source is the input offset voltage of the
op amp. Photodiode dark current and input bias current of
the op amp are in the 2pA range and contribute virtually no
offset error at room temperature. Dark current and input bias
current double for each 10

C above 25

C. At 70

C, the error

current can be approximately 100pA. This would produce a
1mV offset with R

= 10M

. The OPT209 is useful with

feedback resistors of 100M

or greater at room temperature.

The dark output voltage can be trimmed to zero with the
optional circuit shown in Figure 3.

When used with very large feedback resistors, tiny leakage
currents on the circuit board can degrade the performance of
the OPT209. Careful circuit board design and clean assembly
procedures will help achieve best performance. A "guard
ring" on the circuit board can help minimize leakage to the
critical non-inverting input (pin 2). This guard ring should
encircle pin 2 and connect to Common, pin 8.

FIGURE 3. Dark Error (Offset) Adjustment Circuit.

LINEARITY PERFORMANCE

Current output of the photodiode is very linear with radiant
power throughout a wide range. Nonlinearity remains below
approximately 0.01% up to 100

A photodiode current. The

photodiode can produce output currents of 10mA or greater
with high radiant power, but nonlinearity increases to several
percent in this region.

This very linear performance at high radiant power assumes
that the full photodiode area is uniformly illuminated. If the
light source is focused to a small area of the photodiode,
nonlinearity will occur at lower radiant power.

DYNAMIC RESPONSE

Using the internal 1M

resistor, the dynamic response of

the photodiode/op amp combination can be modeled as a

OPT209

10pF

175

V+

0.01µF

500

V+

100µA

1/2 REF200

100

100µA

1/2 REF200

Adjust dark output for 0V.

Trim Range: ±7mV

FIGURE 4. Responsivity (Gain) Adjustment Circuit.

OPT209

10pF

175

V+

10k

Gain Adjustment

+50%; 0%

simple R/C circuit with a 3dB cutoff frequency of 16kHz.
This yields a rise time of approximately 22

s (10% to 90%).

Dynamic response is not limited by op amp slew rate. This
is demonstrated by the dynamic response oscilloscope
photographs showing virtually identical large-signal and
small-signal response.

Dynamic response will vary with feedback resistor value as
shown in the typical performance curve "Voltage Output
Responsivity vs Frequency." Rise time (10% to 90%) will
vary according to the 3dB bandwidth produced by a given
feedback resistor value--

where:

is the rise time (10% to 90%)

is the 3dB bandwidth

NOISE PERFORMANCE

Noise performance of the OPT209 is determined by the op
amp characteristics in conjunction with the feedback
components and photodiode capacitance. The typical
performance curve "Output Noise Voltage vs Measurement
Bandwidth" shows how the noise varies with R

and measured

bandwidth (1Hz to the indicated frequency). The signal
bandwidth of the OPT209 is indicated on the curves. Noise
can be reduced by filtering the output with a cutoff frequency
equal to the signal bandwidth.

Output noise increases in proportion to the square-root of the
feedback resistance, while responsivity increases linearly
with feedback resistance. So best signal-to-noise ratio is
achieved with large feedback resistance. This comes with
the trade-off of decreased bandwidth.

The noise performance of a photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power which would produce an output signal equal
to the noise level. NEP has the units of radiant power
(watts). The typical performance curve "Noise Effective
Power vs Measurement Bandwidth" shows how NEP varies
with R

and measurement bandwidth.

0. 35

(1)

OPT209

FIGURE 5. "T" Feedback Network.

FIGURE 7. Differential Light Measurement.

FIGURE 8. Current Output Circuit.

Bandwidth is reduced to
11kHz due to additional
photodiode capacitance.

FIGURE 6. Summing Output of Two OPT209s.

OPT209

10pF

175

V+

19k

= I

+ R

Advantages: High gain with low resistor values.
Less sensitive to circuit board leakage.

Disadvantage: Higher offset and noise than by using high

value for R

OPT209

10pF

175

= I

+ I

V+

OPT209

10pF

175

= I

V+

Max linear
input voltage
(V+) 0.6V typ

OPT209

10pF

175

15V

+15V

5mA

= I

1 +

OPT209

10pF

175

OPT209

10pF

175

V+

This OPT209 used
as photodiode, only.

= (I

)

OPT209

FIGURE 9. Single Power Supply Operation.

FIGURE 10. DC Restoration Rejects Unwanted Steady-

State Background Light.

FIGURE 11. Differential Light Measurement.

OPT209

10pF

175

See AB-061 for details.

0.1µF

100k

0.1µF

3dB

20dB/decade

= 16Hz

OPT209

10pF

175

= I

V+

OPT209

10pF

175

= I

V+

100k

INA106

= 10 (V

)

100k

10k

G = 10

Difference Measurement

= K log

LOG100

Log of Ratio Measurement

(Absorbance)

100k

1nF

OPT209

10pF

175

= I

V+

0.1µF

(pesudo-ground)

(1)

3.3V

NOTE: (1) Zener diode or other shunt regulator.

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