ChipFind - документация

Электронный компонент: CM3202

Скачать:  PDF   ZIP
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
1
CM3202
PRELIMINARY
Features
Two linear regulators
-Maximum 2A current from V
DDQ
-Source and sink up to 2A V
TT
current
1.7V to 2.8V adjustable V
DDQ
output voltage
500mV typical V
DDQ
dropout voltage at 2A
V
TT
tracking at 50% of V
DDQ
Excellent load and line regulation, low noise
Fast transient response
Meet JEDEC DDR-I and DDR-II memory power spec.
Linear regulator design requires no inductors and has
low external component count
Integrated power MOSFETs
Dual purpose ADJ/Shutdown pin
Built-in over-current limit with short-circuit foldback and
thermal shutdown for V
DDQ
and V
TT
Fast transient response
5mA quiescent current
TDFN-8 and SOIC-8 packages for high performance
thermal dissipation and easy PC board layout
Optional RoHS Compliant Lead-free packaging
Applications
DDR memory and active termination buses
Desktop Computers, Servers
Residential and Enterprise Gateways
DSL Modems
Routers and Switchers
DVD recorders
3D AGP cards
LCD TV and STB
Product Description
T
he CM3202 is a dual-output low noise linear regulator
designed to meet SSTL-2 and SSTL-3 specifications
for DDR-SDRAM V
DDQ
supply and termination voltage
V
TT
supply. With integrated power MOSFET's, the
CM3202 can source up to 2A of V
DDQ
current, and
source or sink up to 2A V
TT
current. The typical drop-
out voltage for V
DDQ
is 500 mV at 2A load current.
The CM3202 provides fast response to transient load
changes. Load regulation is excellent, less than 1%,
from no load to full load. It also has built-in over-current
limits and thermal shutdown at 170
C
.
The CM3202 is packaged in an easy-to-use TDFN-8
and SOIC-8. Low thermal resistance (55
C
/W) allows it
to withstand 1.55W
(1)
dissipation at 85
C
ambient. It
can operate over the industrial ambient temperature
range of 40
C
to 85
C
.
Note
(1)
:
If TDFN-8 is mounted on a double-sided printed circuit board with
two square inches of copper area, it can to withstand 2W dissipation
at 85C ambient then.
Typical Application
1
3
2
DL0
VDDQ
C hip
S et
DLn
DDR
Memory
REF
845
887
VDDQ
RT0
RTn
220u
220u
3.3V
1.25V, 2.5A
S/D
1u
1k
4.7u
ADJSD
GND
VDDQ
VTT
VIN
CM3202
V
REF
GND
4
VIN
VDDQ
8
6
7
5
220u
4.7u
4.7u
VTT
DDR V
DDQ
and Termination Voltage Regulator
2006 California Micro Devices Corp. All rights reserved.
2
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3202
PRELIMINARY
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
PACKAGE / PINOUT DIAGRAM
8-Lead TDFN Package
8-Lead SOIC Package
CM3202-00DE
1
2
3
4
8
7
6
5
V
IN
V
IN
V
TT
GND
V
DDQ
V
DDQ
ADJSD
GND
TOP VIEW
GND
NC
3
2
1
4
3
2
1
5
6
7
PAD
5
6
7
8
8
Pin 1
Marking
TOP VIEW
Note: This drawing is not to scale.
4
V
TT
NC
V
IN
V
DDQ
ADJSD
GND
GND
CM3202-00SM
PART NUMBERING INFORMATION
Pins
Package
Lead-free Finish
Ordering Part Number
1
Part Marking
8
TDFN
CM3202-00DE
CM3202
8
SOIC
CM3202-00SM
CM3202
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
VIN to GND
[GND - 0.3] to +6.0
V
Pin Voltages
V
DDQ
,V
TT
to GND
ADJSD to GND
[GND - 0.3] to +6.0
[GND - 0.3] to +6.0
V
V
Storage Temperature Range
-65 to +150
C
Operating Temperature Range
-40 to +85
C
Lead Temperature (Soldering, 10s)
300
C
Package Pinout
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
3
CM3202
PRELIMINARY
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
V
IN
= 3.3V, typical values are at T
A
= 25C (unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
S
VIN
V
IN
Supply Voltage Range
3
3.3
3.6
V
V
UVLO
Under-voltage Lockout
All outputs are no load
2.5
V
UVLO Hysterisis
200
mV
I
Q
Quiescent Current
V
DDQ
= 0V, V
TT
= 0V,
ADJSD = 3.3V (shutdown)
200
mA
V
DDQ
= 2.5V, V
TT
= 1.25V, (no load)
5
mA
V
DDQ
Regulator
Output Current Limit
V
OUT
= 2.5V
2.8
A
V
REF
Reference Voltage
1.235
1.250
1.265
V
I
BIAS
Input Bias Current (I
ADJ
)
VADJSD = V
REF
30
200
nA
V
R LOAD
Load Regulation
I
O
= 10mA to 2A
1
%
V
R LINE
Line Regulation
V
IN
= 3.15V to 3.5V, I
O
= 10mA
1
%
V
DROPOUT
Dropout Voltage
V
IN
= 3.15V, I
O
= 2A
500
mV
V
TT
Regulator
Output Current Limit (Source)
V
OUT
= 1.25V
2.8
A
Output Current Limit (Sink)
V
OUT
= 1.25V
2.8
A
V
R VTTLOAD
Load Regulation
I
O
= 0A to 2A
1
%
I
O
= 0A to -2A
1
%
Over Temperature Protection
Thermal Shutdown Temperature
170
C
Thermal Shutdown Hysteresis
50
C
Specifications (cont'd)
2006 California Micro Devices Corp. All rights reserved.
4
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3202
PRELIMINARY
VDDQ Dropout vs. IDDQ
IDDQ (A)
Dropout
Voltage
(mV)
VTT vs. VDDQ
0.75
0.85
0.95
1.05
1.15
1.25
1.35
1.45
1.55
1.65
1.5
1.75
2
2.25
2.5
2.75
3
3.25
VDDQ (V)
VT
T
(
V)
Vin
VDDQ
VTT
1ms/div
1V/div
UVLO
Startup into Full Load
VDDQ vs.
Temperature
2.49
2.495
2.
5
2.505
2.51
-40 -20
0
20
40
60
80
10
0
12
0
14
0
Temperatur
e
o
C
VD
DQ
(V)
VDDQ vs. Load Current
VDDQ
(V)
IDDQ (A)
Ta=25 oC
Vin=3.3V
Ta=25 oC
Typical Operating Characteristics
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
5
CM3202
PRELIMINARY
V
IN
= 3.3V
I
OUT
Step: -750mA ~ +750mA
e
s
n
o
p
s
e
R
t
n
e
i
s
n
a
r
T
T
T
V
e
s
n
o
p
s
e
R
t
n
e
i
s
n
a
r
T
Q
D
D
V
V
IN
= 3.3V
I
OUT
Step: 15mA ~ 1.5A
V
TT
I
OUT
I
OUT
V
DDQ
With TDFN-8 Package
VDDQ Transient Respons
e
s
n
o
p
s
e
R
t
n
e
i
s
n
a
r
T
T
T
V
e
V
IN
= 3.3V
I
OUT
Step: 15mA ~ 700mA
V
TT
I
OUT
V
IN
= 3.3V
I
OUT
Step: -350mA ~ +350mA
I
OUT
V
DDQ
With SOIC-8 Package
Typical Operating Characteristics
(cont'd)
2006 California Micro Devices Corp. All rights reserved.
6
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3202
PRELIMINARY
Pin Descriptions
PIN DESCRIPTIONS
PIN(S)
TDFN 8
PIN(S)
SOIC 8
NAME
DESCRIPTION
1
1, 2
V
IN
Input voltage pin, typically 3.3V from the silver box.
2, 4
NC
3
3
V
TT
V
TT
regulator output voltage pin, which is preset to 50% of V
DDQ
.
5, 6
4, 5
GND
Ground pin. The back tab is also ground and serves as the package
heatsink. It should be soldered to the circuit board copper to remove
excess heat from the IC.
7
6
ADJSD
This pin is for V
DDQ
output voltage Adjustment. The V
DDQ
output voltage is
set using an external resistor divider connected to ADJSD. The output
voltage is determined by the following formula
where R1 is the ground-side resistor and R2 is the upper resistor of the
divider. Connect these resistors to the V
DDQ
output at the point of
regulation.
In addition, functions as a Shutdown pin. Apply a voltage higher than V
IN
-
0.6V to this pin to simultaneously shutdown both V
DDQ
and V
TT
outputs.
The outputs are restored when the voltage is lowered below V
IN
-0.6V. A
low-leakage diode in series with the Shutdown signal is recommended to
avoid interference with the voltage adjustment setting.
8
7, 8
V
DDQ
V
DDQ
regulator output voltage pin.
V
DDQ
1.25V
R1 R2
+
R1
---------------------
=
Pin Description
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
7
CM3202
PRELIMINARY
Application Information
Powering DDR Memory
Double-Data-Rate (DDR) memory has provided a huge
step in performance for personal computers, servers
and graphic systems. As is apparent in its name, DDR
operates at double the data rate of earlier RAM, with
two memory accesses per cycle versus one. DDR
SDRAM's transmit data at both the rising falling edges
of the memory bus clock.
DDR's use of Stub Series Terminated Logic (SSTL)
topology improves noise immunity and power-supply
rejection, while reducing power dissipation. To achieve
this performance improvement, DDR requires more
complex power management architecture than previ-
ous RAM technology.
Unlike the conventional DRAM technology, DDR
SDRAM uses differential inputs and a reference volt-
age for all interface signals. This increases the data
bus bandwidth, and lowers the system power con-
sumption. Power consumption is reduced by lower
operating voltage, a lower signal voltage swing associ-
ated with Stub Series Terminated Logic (SSTL_2) and
by the use of a termination voltage, V
TT
. SSTL_2 is an
industry standard, defined in JEDEC document
JESD8-9. SSTL_2 maintains high-speed data bus sig-
nal integrity by reducing transmission reflections.
JEDEC further defines the DDR SDRAM specification
in JESD79C.
DDR memory requires three tightly regulated voltages:
V
DDQ
, V
TT
, and V
REF
(see
Figure 1
). In a typical
SSTL_2 receiver, the higher current V
DDQ
supply volt-
age is normally 2.5V with a tolerance of 200
-
mV. The
active bus termination voltage, V
TT
, is half of V
DDQ
.
V
REF
is a reference voltage that tracks half of V
DDQ
,
1%, and is compared with the V
TT
terminated signal at
the receiver. V
TT
must be within 40
-
mV of V
REF
.
1.22V
CM3202
Application Information (cont'd)
2006 California Micro Devices Corp. All rights reserved.
8
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3202
PRELIMINARY
Figure 1. Typical DDR terminations, Class II
The V
TT
power requirement is proportional to the num-
ber of data lines and the resistance of the termination
resistor, but does not vary with memory size.
In a typi-
cal DDR data bus system each data line termination
may momentarily consume 16.2
-
mA to achieve the
405
-
mV minimum over V
TT
needed at the receiver:
A typical 64 Mbyte SSTL-2 memory system, with 128
terminated lines, has a worst-case maximum V
TT
sup-
ply current up to 2.07A. However, a DDR memory
system is dynamic, and the theoretical peak currents
only occur for short durations, if they ever occur at all.
These high current peaks can be handled by the V
TT
external capacitor. In a real memory system, the con-
tinuous average V
TT
current level in normal operation
is less than 200 mA.
The V
DDQ
power supply, in addition to supplying cur-
rent to the memory banks, could also supply current to
controllers and other circuitry. The current level typi-
cally stays within a range of 0.5A to 1A, with peaks up
to 2A or more, depending on memory size and the
computing operations being performed.
The tight tracking requirements and the need for V
TT
to
sink, as well as source, current provide unique chal-
lenges for powering DDR SDRAM.
CM3202 Regulator
The CM3202 dual output linear regulator provides all of
the power requirements of DDR memory by combining
two linear regulators into a single TDFN-8 or SOIC-8
package. V
DDQ
regulator can supply up to 2A current,
and the two-quadrant V
TT
termination regulator has
current sink and source capability to 2A. The V
DDQ
linear regulator uses a PMOS pass element for a very
low dropout voltage, typically 500mV at a 2A output.
The output voltage of V
DDQ
can be set by an external
voltage divider. The second output, V
TT
, is regulated at
V
DDQ
/2 by an internal resistor divider. The V
TT
regula-
tor can source, as well as sink, up to 2A current. The
CM3202 is designed for optimal operation from a nom-
inal 3.3VDC bus, but can work with VIN as high as 5V.
When operating at higher VIN voltages, attention must
be given to the increased package power dissipation
and proportionally increased heat generation.
V
REF
is typically routed to inputs with high impedance,
such as a comparator, with little current draw. An ade-
quate V
REF
can be created with a simple voltage
divider of precision, matched resistors from V
DDQ
to
ground. A small ceramic bypass capacitor can also be
added for improved noise performance.
Input and Output Capacitors
The CM3202 requires that at least a 220
F electrolytic
capacitor be located near the V
IN
pin for stability and to
maintain the input bus voltage during load transients.
An additional 4.7
F ceramic capacitor between the V
IN
and the GND, located as close as possible to those
pins, is recommended to ensure stability.
A minimum of a 220
F electrolytic capacitor is recom-
mended for the V
DDQ
output. An additional 4.7
F
ceramic capacitor between the V
DDQ
and GND, located
very close to those pins, is recommended.
A minimum of a 220
F, electrolytic capacitor is recom-
mended for the V
TT
output. This capacitor should have
low ESR to achieve best output transient response. SP
or OSCON capacitors provide low ESR at high fre-
quency, and thus are a good choice. In addition, place
a 4.7
F ceramic capacitor between the V
TT
pin and
GND, located very close to those pins. The total ESR
must be low enough to keep the transient within the
V
TT
window of 40mV during the transition for source to
sink. An average current step of 0.5A requires:
Both outputs will remain stable and in regulation even
during light or no load conditions.
Transmitter
VDDQ
VTT (=VDDQ/2) VDDQ
Receiver
Rs = 25
Line
Rt = 25
VREF (=VDDQ/2)
I
terminaton
405mV
Rt 25
(
)
----------------------
16.2mA
=
=
ESR
40mV
1A
---------------
<
40m
=
Application Info (cont'd)
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
9
CM3202
PRELIMINARY
Adjusting V
DDQ
Output Voltage
The CM3202 internal bandgap reference is set at
1.25V. The V
DDQ
voltage is adjustable by using a resis-
tor divider, R1 and R2:
where V
ADJ
= 1.25V (
-
1%). For best regulator stability,
we recommend that R1 and R2 not exceed 10k
each.
Shutdown
ADJSD also serves as a shutdown pin. When this is
pulled high, > (V
IN
- 0.6V), the V
DDQ
output is turned
off and both source and sink MOSFET's of the V
TT
reg-
ulator are set to a high impedance state. During shut-
down, the quiescent current is reduced to less than
3mA, independent of output load.
It is recommended that a 1N914 or equivalent low leak-
age diode be placed between ADJSD Pin and an
external shutdown signal to prevent interference with
the ADJ pin's normal operation. When the diode anode
is pulled low, or left open, the CM3202 is again
enabled.
Current Limit, Foldback and Over-temperature Pro-
tection
The CM3202 features internal current limiting with ther-
mal protection. During normal operation, V
DDQ
limits
the output current to approximately 2A and V
TT
limits
the output current to approximately 2A. When V
TT
is
current limiting into a hard short circuit, the output cur-
rent folds back to a lower level, about 1A, until the over-
current condition ends. While current limiting is
designed to prevent gross device failure, care should
be taken not to exceed the power dissipation ratings of
the package. If the junction temperature of the device
exceeds 170
-
C (typical), the thermal protection cir-
cuitry triggers and shuts down both outputs. Once the
junction temperature has cooled to below about
120
-
C, the CM3202 returns to normal operation.
Thermal Considerations
Typical Thermal Characteristics
The overall junction to ambient thermal resistance
(
JA
) for device power dissipation (P
D
) primarily con-
sists of two paths in the series. The first path is the
junction to the case (
JC
) which is defined by the pack-
age style and the second path is case to ambient (
CA
)
thermal resistance which is dependent on board layout.
The final operating junction temperature for any condi-
tion can be estimated by the following thermal equa-
tion:
When a CM3202 is mounted on a double-sided printed
circuit board with two square inches of copper allo-
cated for "heat spreading," the
JA
is approximately
42.5
-
C/Watt for the CM3202-00DE (TDFN-8) and
85
-
C/Watt for CM3202-00SM (SOIC-8). Based on the
over temperature limit of 170C with an ambient of
85C, the available power of the package will be:
PCB Layout Considerations
TheCM3202 has a heat spreader attached to the bot-
tom of the TDFN-8 package in order for the heat to be
transferred more easily from the package to the PCB.
The heat spreader is a copper pad of dimensions just
smaller than the package itself. By positioning the
matching pad on the PCB top layer to connect to the
spreader during the manufacturing, the heat will be
transferred between the two pads. See the
Figure 2
,
the CM3202-00DE (TDFN-8) and CM3202-00SM
(SOIC-8) show the recommended PCB layout. Please
be noted that there are six vias in the SOIC-8 package
(four vias in the TDFN-8 package) on either side to
allow the heat to dissipate into the ground and power
planes on the inner layers of the PCB. Vias can be
placed underneath the chip, but this can be resulted in
V
DDQ
V
ADJ
R1 R2
+
R1
---------------------
=
T
JUNC
T
AMB
P
D
JC
(
)
P
D
CA
(
)
+
+
T
AMB
P
D
CA
(
)
+
=
=
W
2
=
=
/ W
C
42.5
C
85
C
170
P
D(TDFN8)
W
1
=
=
/ W
C
85
C
85
C
170
P
D(SOIC8)
Application Info (cont'd)
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
10
CM3202
PRELIMINARY
blocking of the solder. The ground and power planes
need to be at least 2 square inches of copper by the
vias. It also helps dissipation if the chip is positioned
away from the edge of the PCB, and not near other
heat-dissipating devices. A good thermal link from the
PCB pad to the rest of the PCB will assure the best
heat transfer from the CM3202-00DE (TDFN-8) to
ambient,
JA
, of approximately 42.5
-
C/W, or
JA
of
approximately 85 C/W for the CM3202-00SM (SOIC-
8).
Figure 2. Thermal Layout
Top View
Bottom Layer
Ground Plane
Top Layer Copper
Connects to Heat Spreader
Pin Solder Mask
Thermal PAD
Solder Mask
Vias (0.3mm Diameter)
(TDFN-8 Package)
Bottom Layer
Ground Plane
Top Layer Copper
Connects to Heat Spreader
Top View
Pin Solder Mask
Vias (0.3mm Diameter)
Note: This drawing is not to scale
(SOIC-8 Package)
Application Info (cont'd)
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
11
CM3202
PRELIMINARY
TDFN-08 Mechanical Specifications
The CM3202-00DE is supplied in an 8-lead, 0.65mm
pitch TDFN package. Dimensions are presented below.
=
This package is compliant with JEDEC standard MO-229, variation
VEEC-1 with exception of the "D2", "E2" and "b" dimensions as
called out in the table above.
Package Dimensions for 8-Lead TDFN
PACKAGE DIMENSIONS
Package
TDFN
JEDEC
No.
MO-229 (Var. WEEC-1)
=
Leads
6
Dim.
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.02
0.05
0.000
0.001
0.002
A2
0.45
0.55
0.65
0.018
0.022
0.026
A3
0.20
0.008
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.00
0.118
D2
1.90
2.00
2.10
0.075
0.079
0.083
E
3.00
0.118
E2
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65
0.026
K
0.20
0.008
L
0.20
0.30
0.45
0.008
0.012
0.018
# per
tape and
reel
3000 pieces
Controlling dimension: millimeters
Mechanical Package Diagrams
BOTTOM VIEW
A
A3
A1
0.10 C
0.08 C
SIDE VIEW
TOP VIEW
b
L
0.10
C A B
M
8X
D2
E2
e
GND PAD
D
E
Pin 1
Marking
3
2
1
6
7
8
A2
K
2
4
6
5
7
C0.25
3
1
8
4
5
Mechanical Details
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
12
CM3202
PRELIMINARY
SOIC-8 Mechanical Specifications
Dimensions for CM3202-00SM devices packaged in 8-
lead SOIC packages with an intagrated heatslug are
presented below.
* This is an approximate number which may vary.
**
Centered on package centerline.
Package Dimensions for SOIC-8
PACKAGE DIMENSIONS
Package
SOIC-8
Leads
8
Dimensions
Millimeters
Inches
Min
Max
Min
Max
A
1.30
1.62
0.051
0.064
A
1
0.03
0.10
0.001
0.004
B
0.33
0.51
0.013
0.020
C
0.18
0.25
0.007
0.010
D
4.83
5.00
0.190
0.197
E
3.81
3.99
0.150
0.157
e
1.27 BSC
0.050 BSC
H
5.79
6.20
0.228
0.244
L
0.41
1.27
0.016
0.050
# per tube
100 pieces*
# per tape
and reel
2500 pieces
Controlling dimension: inches
Mechanical Package Diagrams
H
TOP VIEW
L
END VIEW
C
e
B
A
A1
SEATING
PLANE
SIDE VIEW
1
2
3
4
8
7
6
5
Pin 1
Marking
D
E
Mechanical Details (cont'd)