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2003 California Micro Devices Corp. All rights reserved.
12/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
1
CSPESD301/302/303
1,2 and 3-Channel ESD Arrays in CSP
Features
1, 2 or 3 channels of ESD protection
15kV ESD protection (IEC 61000-4-2, contact
discharge)
30kV ESD protection (HBM)
Supports both AC and DC signal applications
Low leakage current (<100nA)
Chip Scale Package features extremely low lead
inductance for optimum ESD and filter perfor-
mance
4 bump, 1.06 x 0.93mm footprint Chip Scale Pack-
age (CSP)
Lead-free version available
Applications
I/O port protection
EMI filtering for data ports
Cellphones, notebook computers, PDAs
Wireless Handsets
MP3 Players
Digital Still Cameras
Handheld PCs
Product Description
The CSPESD301/302/303 is a family of 1, 2, and 3-
channel ESD protection arrays, which integrate two,
three and four identical avalanche-style diodes. It is
intended that one of these diodes is connected to GND
and the other diodes provide ESD protection for up to 3
lines depending upon the configuration utilized. The
back-to-back diode connections provide ESD protec-
tion for nodes that have AC signals up to 5.9V peak.
These devices provide a very high level of protection
for sensitive electronic components that may be sub-
jected to electrostatic discharge (ESD). The diodes
are designed and characterized to safely dissipate
ESD strikes of 15kV, well beyond the maximum
requirements of the IEC 61000-4-2 international stan-
dard. Using the MIL-STD-883 (Method 3015) specifica-
tion for Human Body Model (HBM) ESD, these devices
protection against contact discharges at greater than
30kV. The diodes also provide some EMI filtering,
when used in combination with a PCB trace or series
resistor.
These devices are particularly well suited for portable
electronics (e.g. cellular telephones, PDAs, notebook
computers) because of their small package format and
easy-to-use pin assignments.
The CSPESD301/2/3 is available in a space-saving,
low-profile, chip-scale package with optional lead-free
finishing.
Electrical Schematics
B1
A2
B2
B1
A2
B2
B1
A2
A1
CSPESD301
CSPESD302
CSPESD303
2003 California Micro Devices Corp. All rights reserved.
2
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
12/10/03
CSPESD301/302/303
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Note 2: Lead-free devices are specified by using a "
+
" character for the top side orientation mark.
B2
B1
A1
A2
Orientation
Marking
A1
2
1
B
A
n*
Orientation
Marking
(see note 2)
PACKAGE / PINOUT DIAGRAMS
Notes:
CSPESD301/302/303
TOP VIEW
BOTTOM VIEW
(Bumps Down View)
(Bumps Up View)
* See ordering information for
appropriate part marking.
1) These drawings are not to scale.
2) Lead-free devices are specified by using a "+" character for the top side orientation mark.
4-Bump CSP Package
3) All 4 bumps are always present. Unused bumps are electrically unconnected.
PART NUMBERING INFORMATION
Bumps
Package
Standard Finish
Lead-free Finish
2
Ordering Part
Number
1
Part Marking
Ordering Part
Number
1
Part Marking
4
CSP
CSPESD301
F
CSPESD301G
F
4
CSP
CSPESD302
G
CSPESD302G
G
4
CSP
CSPESD303
H
CSPESD303G
H
2003 California Micro Devices Corp. All rights reserved.
12/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846
L www.calmicro.com
3
CSPESD301/302/303
Specifications
Note 1: T
A
=25
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to
another diode, one at a time.
Note 3: Unused pins are left open.
Note 4: These parameters are guaranteed by design and char-
acterization.
Figure 1. Parameter Legend
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
Storage Temperature Range
-65 to +150
C
DC Package Power Rating
200
mW
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature Range
-40 to +85
C
ELECTRICAL OPERATING CHARACTERISTICS
1
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
SO
Diode Stand-off Voltage
I
DIODE
=
10A
5.9
V
I
LEAK
Diode Leakage Current
V
IN
=3.3V
100
nA
V
SIG
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
I
DIODE
= 10mA
I
DIODE
= -10mA
6.0
-9.2
7.6
-7.6
9.2
-6.0
V
V
V
ESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Notes 2, 3 and 4
30
15
kV
kV
V
CL
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Between adjacent bumps
Between diagonal bumps
Notes 2, 3 and 4
19.5
19.9
V
V
R
D
Dynamic Resistance
Between adjacent bumps
Between diagonal bumps
Notes 2, 3 and 4
0.85
1.10
C
Capacitance
At 0VDC, 1MHz, 30mVAC
27
pF
3.3V
10mA
10A
V
SIG
V
CL
V
I
ESD
I
LEAK
slope = 1
/
R
D
V
SO
I
2003 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
12/10/03
CSPESD301/302/303
Performance Information
Figure 2. Typical EMI Filter Performance (0VDC, 50 Ohm Environment)
Figure 3. Typical Capacitance VS. Input Voltage (normalized to 0Vdc)
2003 California Micro Devices Corp. All rights reserved.
12/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846
L www.calmicro.com
5
CSPESD301/302/303
Performance Information (cont'd)
Figure 4. Low Current I-V Curve
Figure 5. High Current I-V Curve
2
2
4
6
8
-6
-4
-2
4
6
8
-8
-6
-4 -2
I (A)
V (V)
-8
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
-12 -11 -10 -9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10 11 12
High Current I-V Characteristic - Pads A1 to A2
Current [A]
Voltage [V]
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