P-Channel Enhancement Mode
MOSFET Amplifier/Switch
2N4352
FEATURES
Low ON Resistance
Low Capacitance
High Gain
P-Channel Complement to 2N4341
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N4352
Hermetic TO-72
-55
o
C to +150
o
C
X2N4352
Sorted Chips in Carriers
-55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
1503
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
V
(BR)DSX
Drain-Source Breakdown Voltage
-25
Vdc
I
D
= -10
A, V
GS
= 0
I
DSS
Zero-Gate-Voltage Drain Current
-10
-10
nAdc
Adc
V
DS
= -10V, V
GS
= 0, T
A
= 25
o
C
V
DS
= -10V, V
GS
= 0, T
A
= 150
o
C
I
GSS
Gate Reverse Current
10
pA
V
GS
=
30V, V
DS
= 0
V
GS(th)
Gate Threshold Voltage
-1.0
-5.0
Vdc
V
DS
= -10V, I
D
= -10
A
V
DS(on)
Drain-Source On-Voltage
-1.0
V
I
D
= -2mA, V
GS
= -10V
I
D(on)
On-State Drain Current
-3.0
mA
V
GS
= -10V, V
DS
= -10V
r
DS(on)
Drain-Source Resistance
600
ohms
V
GS
= -10V, I
D
= 0, f = 1.0kHz
| y
fs
|
Forward Transfer Admittance
1000
mho
V
DS
= -10V, I
D
= 2.0mA, f = 1.0kHz
C
iss
Input Capacitance
5.0
pF
V
DS
= -10V, V
GS
= 0, f = 140MHz
C
rss
Reverse Transfer Capacitance
1.3
V
DS
= 0, V
GS
= 0, f = 140MHz
C
d(sub)
Drain-Substrate Capacitance
5.0
V
D(sub)
= -10V, f = 140kHz
t
d1
Turn-On Delay
45
ns
I
D
= -2.0mAdc, V
DS
= -10Vdc
V
GS
= -10V
t
r
Rise Time
65
t
d2
Turn-Off Delay
60
t
f
Fall Time
100
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
PDF 
ZIP