P-Channel JFET Switch
2N5114 2N5116
GENERAL DESCRIPTION
Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and
10VAC
signals can be handled using only +5V logic (TTL or CMOS).
FEATURES
Low ON Resistance
I
D(off)
<500pA
Switches directly from TTL Logic
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +200
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate
above
25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 3mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N5114-16
Hermetic TO-18
-55
o
C to +200
o
C
X2N5114-16 Sorted Chips in Carriers
-55
o
C to +200
o
C
CORPORATION
PIN CONFIGURATION
S
TO-18
G,C
D
SWITCHING CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
2N5114
2N5115
2N5116
UNITS
MAX
MAX
MAX
t
d
Turn-ON Delay Time
6
10
12
ns
t
r
Rise Time (Note 2)
10
20
30
t
off
Turn-OFF Delay Time (Note 2)
6
8
10
t
f
Fall Time (Note 2)
15
30
50
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
2N5114
2N5115
2N5116
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
BV
GSS
Gate-Source Breakdown Voltage
30
30
30
V
I
G
= 1
A, V
DS
= 0
I
GSS
Gate Reverse Current
500
500
500
pA
V
GS
= 20V, V
DS
= 0
1.0
1.0
1.0
A
T
A
150
o
C
I
D(off)
Drain Cutoff Current
-500
-500
-500
pA
V
DS
= -15V
V
GS
= 12V (2N5114)
V
GS
= 7V (2N5115)
V
GS
= 5V (2N5116)
-1.0
-1.0
-1.0
A
V
P
Gate-Source Pinch-Off Voltage
5
10
3
6
1
4
V
V
DS
= -15V, I
D
= -1nA
5508
2N5114 2N5116
CORPORATION
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified) (Continued)
SYMBOL
PARAMETER
2N5114
2N5115
2N5116
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
I
DSS
Drain Current at Zero Gate Voltage
(Note 1)
-30
-90
-15
-60
-5
-25
mA
V
GS
= -0
V
DS
= -18V (2N5114)
V
DS
= -15V (2N5115)
V
DS
= -15V (2N5116)
V
GS(f)
Forward Gate-Source Voltage
-1
-1
-1
V
I
G
= -1mA, V
DS
= 0
V
DS(on)
Drain-Source ON Voltage
-1.3
-0.8
-0.6
V
GS
= 0
I
D
= -15mA (2N5114)
I
D
= -7mA (2N5115)
I
D
= -3mA (2N5116)
r
DS(on)
Static Drain-Source ON Resistance
75
100
150
V
GS
= 0, I
D
= -1mA
r
ds(on)
Small-Signal Drain-Source ON
Resistance
75
100
150
V
GS
= 0, I
D
= 0, f = 1kHz
C
iss
Common-Source Input Capacitance
(Note 2)
25
25
25
pF
V
DS
= -15V, V
GS
= 0,
f = 1mHz
C
rss
Common-Source Reverse Transfer
Capacitance (Note 2)
7
7
7
V
DS
= 0
V
GS
= 12V (2N5114)
V
GS
= 7V (2N5115)
V
GS
= 5V (2N5116)
f = 1mHz
NOTES 1. Pulse test; duration = 2ms.
2. For design reference only, not 100% tested.
TEST CONDITIONS
2N5114
2N5115
2N5116
V
DD
-10V
-6V
-6V
V
GG
20V
12V
8V
R
L
430
910
2K
R
G
100
220
390
I
D(ON)
-15mA
-7mA
-3mA
V
IN
-12V
-7V
-5V
INPUT
OUTPUT
-6V
10%
90%
90%
10%
V
IN
r
t
d
t
r
t
10%
OFF
t
0040
V
DS(ON)
V
DD
51
1.2K
1.2K
51
SAMPLING
SCOPE
0.1
F
0050
V
GG
IN
51
7.5K
V
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10M
INPUT CAPACITANCE 1.5pF
R
L
G
R
TYPICAL PERFORMANCE CHARACTERISTICS
0080
4.0
3.0
2.0
1,000
3,000
10,000
30,000
100,000
10.0
9.0
8.0
7.0
6.0
5.0
V
p
(V)
V
DS
= 20V
V
GS
= 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
V
p
vs g
fs
g
fs
(
V)
0070
4.0
3.0
2.0
1
3
10
30
100
10.0
9.0
8.0
7.0
6.0
5.0
V
p
(V)
V
DS
= 20V
V
GS
= 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
V
p
vs I
DSS
DSS
t
(mA)
0060
4.0
3.0
2.0
10
30
100
300
1,000
1.0
0.9
0.8
0.7
0.6
0.5
10.0
9.0
8.0
7.0
6.0
5.0
DS(ON)
r
(ohms)
V
p
(V)
V
DS
V
GS
= 0.1V
= 0
V
p
DS(ON)
vs r
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