Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch
3N172 / 3N173
FEATURES
High Input Impedance
Diode Protected Gate
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
A
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate
above
25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
3N172-73
Hermetic TO-72
-55
o
C to +150
o
C
X3N172-73
Sorted Chips in Carriers
-55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
TO-72
G
D
S
C,B
1503Z
DEVICE SCHEMATIC
1
2
0200
3
4
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
3N172
3N173
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
I
GSS
Gate Reverse Current
-200
-500
pA
V
GS
= -20V
-0.5
-1.0
A
T
A
= +125
o
C
BV
GSS
Gate Breakdown Voltage
-40
-125
-30
-125
V
I
D
= -10
A
BV
DSS
Drain-Source Breakdown Voltage
-40
-30
I
D
= -10
A
BV
SDS
Source-Drain Breakdown Voltage
-40
-30
I
S
= -10
A, V
DB
= 0
V
GS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
V
DS
= V
GS
, I
D
= -10
A
-2.0
-5.0
-2.0
-5.0
V
DS
= -15V, I
D
= -10
A
V
GS
Gate Source Voltage
-3.0
-6.5
-2.5
-6.5
V
DS
= -15V, I
D
= -500
A
I
DSS
Zero Gate Voltage Drain Current
-0.4
-10
nA
V
DS
= -15V, V
GS
= 0
I
SDS
Zero Gate Voltage Source Current
-0.4
-10
V
SD
= -15V, V
DB
= 0, V
GD
= 0
r
DS(on)
Drain Source On Resistance
250
350
ohms
V
GS
= -20V, I
D
= -100
A
I
D(on)
On Drain Current
-5.0
-30
-5.0
-30
mA
V
DS
= -15V, V
GS
= -10V
3N172 / 3N173
CORPORATION
SMALL-SIGNAL ELECTRICAL CHARACTERISTICS T
A
= 25
o
C and Bulk (substrate) Lead Connected to Source
SYMBOL
PARAMETER
3N172
3N173
UNITS
TEST CONDITIONS
MIN MAX MIN MAX
| y
fs
|
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Forward Transadmittance*
1500 4000 1000 4000
S
V
DS
= -15V, I
D
= -10mA, f = 1kHz
| y
os
|
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Output Admittance*
250
250
S
V
DS
= -15V, I
D
= -10mA, f = 1kHz
C
iss
Small-Signal, Common-Source, Short-Circuit,
Input Capacitance*
3.5
3.5
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz
C
rss
Small-Signal, Common-Source, Short-Circuit,
Reverse Transfer Capacitance*
1.0
1.0
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz
C
oss
Small-Signal, Common-Source, Short-Circuit,
Output Capacitance*
3.0
3.0
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz
NOISE CHARACTERISTICS
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
NF
Common-Source Spot Noise Figure
1.0
dB
V
DS
= -15V, I
D
= -1mA, f = 1kHz, R
G
= 1M
SWITCHING CHARACTERISTICS T
A
= 25
o
C Bulk (substrate) Lead Connected to Source
SYMBOL
PARAMETER
3N172
3N173
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
t
d (on)
Turn-On Delay Time*
12
12
ns
V
DD
= -15V, I
D (on)
= -10mA
t
r
Rise Time*
24
24
R
G
= R
L
= 1.4k
t
off
Turn-Off Delay Time*
50
50
See Test Circuit Below
*Registered JEDEC Data
SWITCHING TIME DETAIL
-0V
-1V
-15V
10%
50%
50%
90%
90%
10%
PULSE
WIDTH
90%
0210
MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH
INPUT PULSE
rise
t
< 2ns
PULSE WIDTH
rise
t
< 0.2ns
in
C
in
R
V
IN
V
OUT
4(on)
t
r
t
off
t
IN
-V
> 200ns
< 2.0pF
> 10M
0220
D.U.T.
V
DD
R
L
V
OUT
R
G
50
V
IN
-0.1
-0.5
-1.0
-5.0
-10
SWITC
H
I
N
G
TIS - n
SEC
SWITCHING TIMES vs. ON-STATE
DRAIN CURRENT
ON-STATE DRAIN CURRENT - (I
D(on)
) - mA
t
d(on)
rise
t
off
G
= R
L
= 1.4K
R
V
DD
= 15V
0230
1000
500
1.0
t
5.0
100
50
10
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