P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
IT1700
FEATURES
Low ON-Resistance
High Gain
Low Noise Voltage
High Input Impedance
Low Leakage
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . -40V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . .
125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate
above
25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 3mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
IT1700
Hermetic TO-72
-55
o
C to +150
o
C
XIT1700
Sorted Chips in Carriers
-55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
1503
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX UNITS
TEST CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage
-40
V
V
GS
= 0, I
D
= -10
A
BV
SDS
Source to Drain Breakdown Voltage
-40
V
V
GS
= 0, I
D
= -10
A
I
GSS
Gate Leakage Current
(See note 2)
I
DSS
Drain to Source Leakage Current
200
pA
V
GS
= 0, V
DS
= -20V
I
DSS
(150
o
C)
Drain to Source Leakage Current
0.4
A
I
SDS
Source to Drain Leakage Current
400
pA
I
SDS
(150
o
C)
Source to Drain Leakage Current
0.8
A
V
GS(th)
Gate Threshold Voltage
-2
-5
V
V
GS
= V
DS
, I
D
= -10
A
r
DS(on)
Static Drain to Source "on" Resistance
400
ohms
V
GS
= -10V, V
DS
= 0
I
DS(on)
Drain to Source "on" Current
2
mA
V
GS
= -10V, V
DS
= -15V
g
fs
Forward Transconductance Common Source
2000
4000
S
V
DS
= -15V, I
D
= -10mA, f = 1kHz
C
iss
Small Signal, Short Circuit, Common Source,
Input Capacitance
5
pF
V
DS
= -15V, I
D
= -10mA
f = 1MHz (Note 3)
C
rss
Small Signal, Short Circuit, Common Source,
Reverse Transfer Capacitance
1.2
pF
V
DG
= -15V, I
D
= 0
f = 1MHz (Note 3)
C
oss
Small Signal, Short Circuit, Common Source,
Output Capacitance
3.5
pF
V
DS
= -15V, I
D
= -10mA
f = 1MHz (Note 3)
NOTES: 1. Device must not be tested at
125V more than once nor longer than 300ms.
2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA.
External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed.
3. For design reference only, not 100% tested.
IT1700
CORPORATION
PDF 
ZIP