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Электронный компонент: J108

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N-Channel JFET Switch
J108 J110 / SST108 SST110
FEATURES

Low Cost

Automated Insertion Package

Low Insertion Loss

No Offset or Error Voltages Generated by Closed Switch
Purely
Resistive
High Isolation Resistance from Driver

Fast Switching

Low Noise
APPLICATIONS

Analog Switches

Choppers

Commutators

Low-Noise Audio Amplifiers
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -55
o
C to +150
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +135
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate
above
25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
J108-110
Plastic TO-92
-55
o
C to +135
o
C
XJ108-110
Sorted Chips in Carriers
-55
o
C to +135
o
C
SST109-110 Plastic SOT-23
-55
o
C to +135
o
C
CORPORATION
PIN CONFIGURATION
TO-92
S G
D
5018
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
108
109
110
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
I
GSS
Gate Reverse Current (Note 1)
-3
-3
-3
nA
V
DS
= 0V, V
GS
= -15V
V
GS(off)
Gate-Source Cutoff Voltage
-3
-10
-2
-6
-0.5
-4
V
V
DS
= 5V, I
D
= 1
A
BV
GSS
Gate-Source Breakdown Voltage
-25
-25
-25
V
DS
= 0V, I
G
= -1
A
I
DSS
Drain Saturation Current (Note 2)
80
40
10
mA
V
DS
= 15V, V
GS
= 0V
I
D(off)
Drain Cutoff Current (Note 1)
3
3
3
nA
V
DS
= 5V, V
GS
= -10V
r
DS(on)
Drain-Source ON Resistance
8
12
18
V
DS
0.1V, V
GS
= 0V
C
dg(off)
Drain-Gate OFF Capacitance
15
15
15
pF
V
DS
= 0,
V
GS
= -10V
(Note 3)
f = 1MHz
C
sg(off)
Source-Gate OFF Capacitance
15
15
15
C
dg(on)
+ C
sg(on)
Drain-Gate Plus Source-Gate
ON Capacitance
85
85
85
V
DS
= V
GS
= 0
(Note 3)
t
d(on)
Turn On Delay Time
4
4
4
ns
Switching Time Test
Conditions (Note 3)
J107
J109
J110
V
DD
1.5V
1.5V
1.5V
V
GS(off)
-12V
-7V
-5V
R
L
150
150
150
t
r
Rise Time
1
1
1
t
d(off)
Turn OFF Delay Time
6
6
6
t
f
Fall Time
30
30
30
NOTES: 1. Approximately doubles for every 10
o
C increase in T
A
.
2. Pulse test duration = 300
s; duty cycle
3%.
3. For design reference only, not 100% tested.
PRODUCT MARKING (SOT-23)
SST108
I
0 8
SST109
I
0 9
SST110
I
1 0
SOT-23
G
S
D