880 East Arques Avenue, Sunnyvale, CA 94085-4536 USA 408.328.8360 FAX.408.328.8361
CM1210
Integrated PD+TIA
DESCRIPTION
The CM1210 is a full CMOS PDIC
(photodiode and transimpedence amplifier
(TIA) integrated circuit) that is capable of
being used in DVD-Player, DVD-ROM and CD-
ROM in up to 24MHz (typical) applications.
10
9
8
7
6
1
3
4
5
+
-
+
-
2
+
-
+
-
+
-
+
-
GND
V
E
V
D
V
A
V
RF
V
B
V
C
V
F
Vcc
V
S
F
D
A
B
C
E
Vref
V
A
V
B
V
C
V
D
+
-
FEATURES
Capella's special patent pending process
optimizes the photodiode sensitivity for
the red laser diode (=650nm) and the
IR laser diode (=780nm)
PDIC with internal RF summing.
(Includes six photodiodes as well as I/V
technology all in 1 chip).
24MHz PDIC
High PD sensitivity.
Uses a small, thin sized package
(5.0x4.0x1.5mm), or COB package
(5.0x4.0x1.1mm).
Supports Focus Servo (Astigmatism
method), Tracking servo (Three beam
method), Tracking servo (DPD for DVD),
and Tracking Servo (Differential Push-
Pull)
Best in class with negligible channel
cross-talk and PDIC surface reflections
APPLICATIONS
DVD-Player Pickups
CD-ROM/DVD-ROM Pickups
Revision: 1.2
Date: 08-Nov-01
DISCLAIMER
Capella Microsystems Inc. reserves the right to make changes in specifications or discontinue this product at any time
without notice. Please contact Capella Microsystems Inc. for possible updates before starting a design.
Capella Microsystems Inc. products are not designed for use in life support applications. Any parties who use these products
in such applications do so at their own risk and agree to fully indemnify Capella Microsystems Inc. for any damages resulting
from such improper usage or sale.
1
Copyright 2001, Capella Microsystems, Inc.
CM1210 -- Integrated PD+TIA
Absolute Maximum Ratings
Description Symbol
Value
Unit
Power Supply Voltage
Vcc
7.0
V
Output Voltage
Vo
Vcc + 0.3
V
Operating Temperature
Topr
-10 ~ +70
C
Storage Temperature
Tstg
-40 ~ +85
C
Recommended Operating Conditions
(Ta = 25C)
Description Signal
Condition
Min
Typ
Max
Unit
Operating Supply Voltage
Vcc
-
4.5
5.0
5.5
V
Operating Supply Reference Voltage Range 1
Vs1
*(Note 1, 2)
- 2.0
2.1
2.2
V
Operating Supply Reference Voltage Range 2
Vs2
*(Note 1, 2)
2.4
2.5
2.6
V
Electrical Characteristics
(Ta = 25C, Vcc = 5V, Vs = 2.5V, 10k//20
p
F
)
Description
Signa
l
Condition Min
Typ
Max
Unit
Applicable
To
Current
Consumption
Icc -
15
20
mA
Vcc
Output Offset
Voltage 1
Vod
1
Offset voltage w.r.t.
Vs *(Note 4)
-20 0 +20
mV V
A
~ V
D
Output Offset
Voltage 2
Vod
2
Offset voltage w.r.t.
Vs *(Note 4)
-15 0 +15
mV V
E
~ V
F
Output Offset
Voltage 3
Vod
3
Offset voltage w.r.t.
GND *(Note 3)
1.35 1.5 1.75 V
V
RF
A-B *(Note 4)
-20
0
+20
V
A
, V
B
C-D *(Note 4)
-20
0
+20
V
C
, V
D
(A+C) - (B+D) *(Note 4)
-20
0
+20
V
E
~ V
F
Output Offset
Voltage Difference
Vod
E-F *(Note 4)
-15
0
+15
mV
V
A
~ V
D
*(Note 1): Two of the most commonly used reference voltages in the industry
*(Note 2): Reference voltage source (Vs) must have a minimum current sinking/sourcing capacity of 500A
*(Note 3): The PD sensitivity for the =780nm laser diode equals or exceeds the sensitivity for the
=650nm laser diode
*(Note 4): Dark Conditions with no light incident on the photodiode
2
Copyright 2001, Capella Microsystems, Inc.
CM1210 -- Integrated PD+TIA
Photodiode Electrical Characteristics
(Ta = 25C, Vcc = 5V, Vs = 2.5V, 20
p
F
//10k, =650nm
*(N
OTE
3))
Description Signal
Condition
Min
Typ
Max
Unit
Applicable
To
Sensitivity 1
S
1
Po = 10W 18.0
24.6
31.2
mV/W V
A
~ V
D
Sensitivity 2
S
2
Po = 10W
31.2 44.7 58.1 mV/
W
V
E
~ V
F
Sensitivity 3
S
3
Po = 10w
30.2 43.2 56.1 mV/
W
V
RF
Gain Ratio 1 (RF / A~D)
SR
1
Po = 10w
1.575 1.75 1.925 -
V
A
~ V
D
,
V
RF
Cutoff Frequency 1
fc
1
-3dB 20
24
MHz
V
A
~ V
D
Cutoff Frequency 2
fc
2
-3dB 20
24
MHz
V
RF
Cutoff Frequency 3
fc
3
-3dB 1
5
MHz
V
E
~ V
F
Max. Output Voltage 1
V
OH
1
Po = 100W
3.8 4.0
V V
A
~ V
D
Max. Output Voltage 2
V
OH
2
Po = 100W
3.8 4.0
V V
E
~ V
F
Max. Output Voltage 3
V
OH
3
Po = 100W
3.8 4.0
V
V
RF
Group Delay Variation 1
tgd
1
f = 1 ~ 12MHz
-3
+3
nS
V
A
~ V
D
Group Delay Variation 2
tgd
2
f = 1 ~ 12MHz
-3
+3
nS
V
RF
Output Noise Level 1
Vn
1
f = 1 ~ 12MHz
RBW = 30KHz
VBW=100Hz
-87
-82
dBm V
A
~ V
D
Output Noise Level 2
Vn
2
f = 1 ~ 12MHz
RBW = 30KHz
VBW=100Hz
-76
-71
dBm V
RF
E
F
D
C
B
A
6
6
Y
X
124
124
88
22
22
200
120
5
5
*Package center equals photodiode center
Y
X
1
5
10
6
F
E
F
E
10
6
1
5
Y
X
Figure 2: CM1210 Photodiode Configuration
3
Copyright 2001, Capella Microsystems, Inc.
CM1210 -- Integrated PD+TIA
1
2
3
4
5
V
D
V
A
1
F
The external loading on all outputs is 10K
//20pF.
The RF output has a 1
F capacitor incorporated to cut the DC current.
V
RF
V
B
V
C
10
9
8
7
6
V
F
Vcc
V
S
GND
V
E
5.0V
2.5V
Figure 3: CM1210 Test Measurement Circuit
10
10
10
10
5.00.1
10
10
10
4.00.1
10
0.150.07
8.40.4
1.50.2
0.550.2
0.800.1
3.20.1
0.480.1
1
2
3
4
5
10
9
8
7
6
V
D
V
A
V
C
V
B
V
RF
V
F
V
CC
V
E
GND
V
S
All dimensions are in millimeters.
F
E
5
1
2
3
4
6
10
9
8
7
0.350.1
0.4-0.15
+0.1
0.2max
4.4max
5.4max
0.80.1
0.750.1
1.0
depth = 0.1max
Pin No. 1
Figure 4: CM1210 Lead Frame Package Dimensions
4
Copyright 2001, Capella Microsystems, Inc.
CM1210 -- Integrated PD+TIA
Unit: (mm)
F
E
4.00.1
Package Center
1
3
5
3.80.1
5.00.1
0.7
2.50.2 (IC Center)
Package Center
resisit
PDIC
2
4
10
9
8
7
6
0.5
1.1
OEIC
Sealed Resin
0.30.1
0.5
1.1
PDIC
Note: Package dimensions
may be subject to change.
V
D
V
F
Vcc
GND
Vs
V
A
V
B
V
C
V
E
V
RF
Figure 5: CM1210 COB Package Dimensions
Die Positioning Error:
X, Y 200um
Die Rotation Error:
3
Note: Applies to all packages
Figure 6: CM1210 Die Placement
5
Copyright 2001, Capella Microsystems, Inc.
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