FEATURES
NEC's C TO Ku BAND
SUPER LOW NOISE AND
HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
NE3503M04
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave communication
system
California Eastern Laboratories
ORDERING INFORMATION
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3503M04-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
SUPER LOW NOISE FIGURE AND
HIGH ASSOCIATED GAIN:
NF = 0.55 dB TYP., G
a
= 11.5 dB TYP. @ V
DS
= 2 V,
I
D
= 10 mA, f = 12 GHz
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
(M04) PACKAGE:
GATE WIDTH:
W
g
= 160 m
M04 PACKAGE
PART NUMBER
QUANTITY
PACKAGE
MARKING
SUPPLYING FORM
NE3503M04-A
50 pcs (Non reel)
4-Pin thin-type
super minimold
(Pb-Free)
V75
8 mm wide embossed taping
NE3503M04-T2-A
3 kpcs/reel
Pin 1 (Source), Pin 2 (Drain) face the perforation side
of the tape
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
-
3.0
V
Drain Current
I
D
I
DSS
mA
Gate Current
I
G
80
A
Total Power Dissipation
P
tot
125
mW
Channel Temperature
T
ch
+125
C
Storage Temperature
T
stg
-
65 to +125
C
NE3503M04
RECOMMENDED OPERATING CONDITIONS
(T
A
= +25C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain to Source Voltage
V
DS
-
2
3
V
Drain Current
I
D
-
10
15
mA
Input Power
P
in
-
-
0
dBm
ELECTRICAL CHARACTERISTICS
(T
A
= +25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gate to Source Leak Current
I
GSO
V
GS
= -3.0 V
-
0.5
10
A
Saturated Drain Current
I
DSS
V
DS
= 2 V, V
GS
= 0 V
15
40
70
mA
Gate to Source Cutoff Voltage
V
GS (off)
V
DS
= 2 V, I
D
= 100 A
-
0.2
-
0.7
-
2.0
V
Transconductance
g
m
V
DS
= 2 V, I
D
= 10 mA
40
55
-
mS
Noise Figure
NF
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
-
0.55
0.75
dB
Associated Gain
G
a
10.5
11.5
-
dB
NE3503M04
UPG2227T5F
TYPICAL CHARACTERISTICS
(T
A
= +25C, unless otherwise specified)
T
o
tal Power Dissipation
P
to
t
(mW)
Ambient Temperature T
A
(C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
250
200
150
125
100
50
0
50
100
125
150
200
250
80
60
40
20
0
-2.0
-1.0
0
Drain Current
I
D
(mA)
Gate to Source Voltage V
GS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2 V
1.6
1.0
1.2
1.4
0.8
0.6
0.2
0.4
0.0
16
10
12
14
8
6
2
4
0
10
15
0
5
20
25
30
Drain Current I
D
(mA)
Minimum Noise Figure NF
mi
n
(dB)
Associated Gain
G
a
(dB)
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
f = 12 GHz
V
DS
= 2 V
NF
min
G
a
2.0
1.2
1.4
1.6
1.8
0.6
0.8
1.0
0.2
0.4
0.0
25
15
10
5
20
0
6
8
2
4
10
0
12 14 16 18 20
Frequency f (GHz)
Minimum Noise Figure NF
mi
n
(dB)
Associated Gain
G
a
(dB)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
V
DS
= 2 V
I
D
= 10 mA
NF
min
G
a
Drain Current
I
D
(mA)
Drain to Source Voltage V
DS
(V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
100
20
40
60
80
0
1.0
2.0
V
GS
= 0 V
-0.2 V
-0.4 V
-0.6 V
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT:mm)
NE3503M04
PIN CONNECTIONS
1. Source
2. Drain
3. Source
4. Gate
0.590.05
0.1
1
+0.1
-0.0
5
(Bottom View)
4
3
1
2
1.25
2.00.1
1.30
(1.05)
0.60
0.65
0.65
0.65
1.30
1.25
2.00.1
1
2
4
3
1.250.1
2.050.1
0.30
+0.1
-0.0
5
0.40
+0.1
-0.0
5
0.30
+0.1
-0.0
5
0.30
+0.1
-0.0
5
V75
MOUNTING PAD DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT:mm)
NE3503M04
0.8
0.74
1
3
2
4
1.0
1.0
0.9
1.0
0.3 TH
Reference 1
Reference 2
2
1
3
4
0.6
1.6
1.25
1.3
0.6
0.5
NE3503M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Caution
Do not use different soldering methods together (except for partial heating).
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
: 60 seconds or less
Preheating time at 120 to 180C
: 12030 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
Partial Heating
Peak temperature (pin temperature)
: 350C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
03/04/2005
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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