NEC's 3.0 V, 0.25 W L&S-BAND
MEDIUM POWER SILICON LD-MOSFET
FEATURES
LOW COST PLASTIC SURFACE MOUNT PACKAGE
HIGH OUTPUT POWER: +26 dBm TYP at V
DS
= 3.0 V
HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
SINGLE SUPPLY: 2.8 to 6 V
SURFACE MOUNT PACKAGE: 5.7
x
5.7
x
1.1 mm MAX
NE552R479A
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
Notes:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PART NUMBER
NE552R479A
PACKAGE OUTLINE
79A
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
P
OUT
Output Power
dBm
24.0
26.0
G
L
Linear Gain
dB
11.0
ADD
Power Added Efficiency
%
35
45
I
D
Drain Current
A
230
I
GSS
Gate-to-Source Leakage Current
nA
100
V
GS
= 5.0 V
I
DSS
Saturated Drain Current
nA
100
V
DS
= 6.0 V
(Zero Gate Voltage Drain Voltage)
V
TH
Gate Threshold Voltage
V
1
1.4
1.9
V
DS
= 3.5 V, I
DS
=
1 mA
g
m
Transconductance
S
0.4
V
DS
= 3.5 V, I
DS
=
100 mA
BV
DSS
Drain-to-Source Breakdown Voltage
V
15
18
I
DSS
= 10
A
R
TH
Thermal Resistance
C/W
10
Channel-to-Case
Functional
Characteristics
Electrical DC
Characteristics
f = 2.45 GHz, V
DS
= 3.0 V,
I
DSQ
= 200 mA (RF OFF)
P
in
= 19 dBm, except
Pin = 10 dBm for linear gain
DESCRIPTION
NEC's NE552R479A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for mobile and fixed wireless applications. Die
are manufactured using NEC's NEWMOS2 technology (NEC's
0.6
m WSi gate lateral MOSFET) and housed in a surface
mount package.
DIGITAL CELLULAR PHONES:
3.0 V GSM1900 Pre Driver
ANALOG CELLULAR PHONES:
2.4 V AMPS Handsets
OTHERS:
W-LAN
Short Range Wireless
Retail Business Radio
Special Mobile Radio
APPLICATIONS
Source
Gate
Drain
4.2
5.7 Max
4.4 Max
0.8 0.15
0.6 0.15
5.7 Max
0.4 0.15
Source
Gate
Drain
1.2 Max
1.0 Max
3.6 0.2
0.8 Max
0.9 0.2
0.2 0.1
1.5 0.2
A
W
California Eastern Laboratories
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain Supply Voltage
V
15.0
V
GS
Gate Supply Voltage
V
5.0
I
DS
Drain Current
mA
300
I
DS
Drain Current (Pulse Test)2
mA
600
P
T
Total Power Dissipation
W
10
T
CH
Channel Temperature
C
125
T
STG
Storage Temperature
C
-55 to +125
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
UNITS
TYP
MAX
V
DS
Drain to Source Voltage
V
3.0
6.0
V
GS
Gate Supply Voltage
V
2.0
3.0
I
DS
Drain Current
1
mA
200
500
P
IN
Input Power
2
dBm
19
25
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty cycle 50%, Ton
1 s.
NE552R479A
Drain Current, I
D
(A)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Total Power Dissipation, P
D
(W)
DRAIN CURRENT vs.
DRAIN VOLTAGE
Drain Voltage, V
D
(V)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Case Temperature, T
C
(
C)
25
20
15
10
5
0
150
100
50
75
0
25
R
TH
= 10
C/W
125
10.0
0.00
2.0
4.0
6.0
8.0
0.0
0.6
0.4
0.2
1.0
0.8
3.75
1.75
2.20
2.25
2.50
2.75
3.00
3.25
3.50
Gate Voltage (V)
Notes:
1. Duty cycle 50%, Ton
1 s.
2. f = 2.45 GHz, V
DS
= 3.0 V
.
PART NUMBER
QTY
NE552R479A-T1A
12 mm wide embossed taping.
Gate pin faces the perforation side of
the tape.
5 kpcs/Reel
ORDERING INFORMATION
Output Power, P
out
(dBm)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
gs
(V)
NE552R479A
Drain Efficiency,
d (%)
Power Added Efficiency,
add (%)
Output Power, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
Input Power,P
in
(dBm)
IMD,(dBC)
IMD vs. TWO TONE OUTPUT POWER
Average Two Tone Output Power, P
out
(dBm)
Drain Efficiency,
d (%)
Power Added Efficiency,
add (%)
Output Power, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
Input Power,P
in
(dBm)
Drain Efficiency,
d (%)
Power Added Efficiency,
add (%)
Output Power, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
gs
(V)
Drain Efficiency,
d (%)
Power Added Efficiency,
add (%)
0
25
50
75
100
1250
P
out
I
ds
d
1000
750
500
250
0
5
10
15
20
25
0
30
25
20
15
10
5
I
ds
(mA)
a
dd
Frequency = 2.45 GHz
V
ds
= 3.0 V
I
dq
= 100 mA
0
25
50
75
100
1250
P
out
I
ds
d
a
dd
1000
750
500
250
0
1
2
3
4
0
30
25
20
15
10
5
Frequency = 2.45 GHz
V
ds
= 3.0 V
P
in
= 19 dBm
I
ds
(mA)
0
25
50
75
100
1250
P
out
I
ds
d
1000
750
500
250
0
5
10
15
20
25
0
30
25
20
15
10
5
I
ds
(mA)
a
dd
Frequency = 2.45 GHz
V
ds
= 3.0 V
I
dq
= 200 mA
IM3
IM5
10
15
20
25
30
5
-10
-20
-30
-40
-50
-70
-60
Frequency = 2.45 GHz
Frequency = 1 MHz
V
ds
= 3.0 V
I
dq
= 200 mA
0
25
50
75
100
1250
P
out
I
ds
d
a
dd
1000
750
500
250
0
5
10
15
20
25
0
30
25
20
15
10
5
I
ds
(mA)
Frequency = 2.0 GHz
V
ds
= 3.0 V
I
dq
= 150 mA
0
25
50
75
100
1250
P
out
I
ds
d
a
dd
1000
750
500
250
0
1
2
3
4
0
30
25
20
15
10
5
Frequency = 2.0 GHz
V
ds
= 3.0 V
P
in
= 19 dBm
I
ds
(mA)
Output Power, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
Input Power,P
in
(dBm)
Drain Efficiency,
d (%)
Power Added Efficiency,
add (%)
NE552R479A
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
Coordinates in Ohms
Frequency in GHz
V
D
=
2.4 V, I
D
= 50 mA
Note: This file and many other s-parameter files can be downloaded from www.cel.com
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
j50
j25
j10
0
10
25
-j10
-j25
-j50
-j100
j100
0
50
100
S
22
S
11
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.10
0.877
- 70.3
13.863
135.4
0.042
46.6
0.452
-104.4
0.05
25.15
0.20
0.806
-108.8
9.339
111.6
0.057
23.4
0.569
-132.8
0.05
22.13
0.30
0.775
-129.7
6.708
97.4
0.061
9.6
0.614
-145.1
0.07
20.43
0.40
0.764
-142.5
5.130
87.2
0.062
0.6
0.641
-151.6
0.09
19.17
0.50
0.760
-151.0
4.102
79.2
0.061
- 7.0
0.663
-155.4
0.12
18.24
0.60
0.765
-157.3
3.378
72.3
0.060
- 13.0
0.681
-158.2
0.14
17.49
0.70
0.771
-162.3
2.846
66.1
0.059
- 18.2
0.699
-160.3
0.17
16.85
0.80
0.781
-166.4
2.437
60.6
0.057
- 23.0
0.717
-161.9
0.20
16.32
0.90
0.792
-170.0
2.113
55.5
0.055
- 27.3
0.734
-163.4
0.22
15.86
1.00
0.805
-173.2
1.854
50.6
0.053
- 31.4
0.751
-164.8
0.23
15.46
1.10
0.816
-176.0
1.644
46.2
0.051
- 34.8
0.770
-166.0
0.23
15.11
1.20
0.829
-178.7
1.458
41.7
0.048
- 38.5
0.781
-167.7
0.27
14.80
1.30
0.838
178.6
1.304
37.5
0.046
- 41.8
0.793
-169.1
0.31
14.53
1.40
0.848
176.4
1.172
33.7
0.044
- 44.9
0.806
-170.4
0.33
14.29
1.50
0.855
174.2
1.057
30.0
0.041
- 47.6
0.818
-171.7
0.38
14.07
1.60
0.861
172.2
0.958
26.5
0.039
- 50.3
0.830
-173.1
0.43
13.89
1.70
0.866
170.3
0.871
23.3
0.037
- 52.4
0.841
-174.5
0.49
13.72
1.80
0.872
168.5
0.795
20.3
0.035
- 54.4
0.851
-175.9
0.56
13.61
1.90
0.877
166.8
0.729
17.3
0.033
- 56.7
0.861
-177.4
0.61
13.49
2.00
0.883
165.2
0.671
14.6
0.031
- 58.7
0.870
-178.8
0.65
13.39
2.10
0.889
163.8
0.619
11.9
0.029
- 60.2
0.878
179.7
0.68
13.29
2.20
0.895
162.3
0.572
9.3
0.027
- 62.1
0.885
178.2
0.74
13.22
2.30
0.901
161.1
0.531
6.9
0.026
- 63.8
0.892
176.8
0.76
13.14
2.40
0.905
159.8
0.493
4.5
0.024
- 65.6
0.898
175.2
0.82
13.07
2.50
0.909
158.8
0.459
2.2
0.023
- 67.3
0.903
173.8
0.89
13.05
2.60
0.909
157.8
0.427
0.1
0.021
- 68.8
0.909
172.3
1.02
12.11
2.70
0.911
157.0
0.399
- 1.9
0.019
- 71.4
0.914
170.8
1.19
10.52
2.80
0.910
156.3
0.373
- 3.8
0.018
- 74.0
0.919
169.1
1.41
9.38
2.90
0.912
155.7
0.350
- 5.5
0.016
- 74.2
0.924
167.5
1.55
8.93
3.00
0.912
155.1
0.329
- 7.2
0.015
- 74.8
0.927
166.0
1.82
8.26
3.10
0.915
154.8
0.311
- 8.8
0.014
- 75.5
0.932
164.4
1.90
8.13
3.20
0.916
154.2
0.294
- 10.4
0.012
- 77.4
0.935
162.9
2.19
7.63
3.30
0.919
153.8
0.278
- 11.9
0.011
- 77.8
0.939
161.3
2.41
7.39
3.40
0.920
153.4
0.263
- 13.4
0.010
- 79.9
0.943
159.6
2.77
7.11
3.50
0.922
153.1
0.251
- 14.8
0.008
- 80.8
0.948
157.9
3.15
6.98
3.60
0.923
153.0
0.239
- 16.1
0.007
- 78.5
0.951
156.1
3.72
6.76
3.70
0.924
153.0
0.228
- 17.4
0.006
- 75.4
0.953
154.1
4.29
6.58
3.80
0.924
153.1
0.217
- 18.7
0.005
- 73.6
0.957
152.1
4.86
6.47
3.90
0.925
153.5
0.208
- 19.9
0.004
- 70.4
0.960
149.6
6.62
6.36
4.00
0.925
154.1
0.200
- 21.2
0.003
- 50.4
0.961
146.8
9.58
5.98
NE552R479A
V
D
= 2.4 V, I
D
= 50 mA
S
21
S
12
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.10
0.881
- 80.4
17.975
132.9
0.030
44.0
0.490
-134.7
0.06
27.71
0.20
0.833
-119.4
11.643
110.6
0.039
22.1
0.623
-151.5
0.06
24.72
0.30
0.813
-139.1
8.264
98.2
0.042
10.8
0.666
-159.4
0.08
22.98
0.40
0.805
-151.0
6.317
89.6
0.042
3.3
0.689
-163.6
0.11
21.78
0.50
0.800
-158.9
5.073
82.9
0.042
- 1.9
0.704
-166.2
0.14
20.83
0.60
0.801
-164.7
4.206
77.2
0.042
- 6.9
0.714
-168.1
0.17
20.04
0.70
0.802
-169.3
3.577
72.1
0.041
- 10.8
0.725
-169.4
0.21
19.42
0.80
0.807
-173.1
3.093
67.4
0.040
- 14.2
0.735
-170.5
0.24
18.89
0.90
0.812
-176.3
2.711
63.1
0.039
- 17.7
0.744
-171.5
0.26
18.42
1.00
0.820
-179.2
2.405
58.9
0.038
- 20.7
0.754
-172.3
0.28
18.03
1.10
0.827
178.4
2.158
55.1
0.037
- 23.6
0.767
-173.0
0.29
17.66
1.20
0.836
175.9
1.936
51.1
0.036
- 26.4
0.773
-174.2
0.32
17.37
1.30
0.840
173.6
1.752
47.4
0.034
- 28.9
0.781
-175.1
0.37
17.06
1.40
0.847
171.8
1.592
43.9
0.033
- 30.9
0.790
-176.0
0.41
16.86
1.50
0.851
169.8
1.452
40.4
0.032
- 33.7
0.799
-176.9
0.45
16.63
1.60
0.854
168.1
1.331
37.3
0.030
- 35.5
0.808
-177.8
0.51
16.44
1.70
0.857
166.4
1.223
34.2
0.029
- 37.3
0.817
-178.8
0.58
16.28
1.80
0.861
164.9
1.127
31.3
0.027
- 39.0
0.824
-179.9
0.66
16.15
1.90
0.865
163.5
1.044
28.4
0.026
- 40.7
0.833
178.9
0.69
15.97
2.00
0.870
162.1
0.969
25.8
0.025
- 41.6
0.841
177.8
0.76
15.91
2.10
0.875
160.9
0.902
23.1
0.024
- 43.3
0.849
176.7
0.81
15.82
2.20
0.880
159.6
0.841
20.5
0.023
- 44.3
0.855
175.5
0.85
15.69
2.30
0.885
158.5
0.786
18.0
0.022
- 45.3
0.862
174.2
0.88
15.62
2.40
0.889
157.5
0.736
15.6
0.020
- 46.9
0.869
172.9
0.96
15.60
2.50
0.892
156.6
0.689
13.3
0.019
- 48.5
0.875
171.6
1.03
14.40
2.60
0.893
155.7
0.646
11.0
0.018
- 49.6
0.881
170.3
1.17
13.05
2.70
0.895
155.0
0.607
9.0
0.017
- 50.5
0.886
169.0
1.32
12.20
2.80
0.894
154.5
0.571
6.9
0.015
- 53.1
0.891
167.5
1.61
11.19
2.90
0.895
153.9
0.540
5.0
0.014
- 52.4
0.897
166.1
1.81
10.71
3.00
0.896
153.5
0.511
3.2
0.013
- 50.3
0.902
164.7
2.08
10.17
3.10
0.899
153.2
0.485
1.5
0.012
- 50.7
0.907
163.2
2.11
10.09
3.20
0.900
152.8
0.460
- 0.3
0.011
- 51.9
0.911
161.7
2.44
9.58
3.30
0.903
152.4
0.438
- 1.9
0.010
- 49.9
0.915
160.3
2.77
9.33
3.40
0.904
152.0
0.417
- 3.6
0.009
- 47.2
0.920
158.7
3.09
9.09
3.50
0.906
151.9
0.398
- 5.1
0.008
- 44.6
0.925
157.0
3.35
8.98
3.60
0.907
151.8
0.381
- 6.7
0.007
- 38.1
0.928
155.3
3.93
8.65
3.70
0.909
151.8
0.365
- 8.3
0.006
- 33.2
0.932
153.4
4.17
8.53
3.80
0.908
152.1
0.350
- 9.7
0.005
- 26.9
0.936
151.5
4.98
8.21
3.90
0.910
152.5
0.337
- 11.2
0.005
- 15.3
0.940
149.0
4.88
8.20
4.00
0.910
153.1
0.325
- 12.8
0.005
- 4.5
0.941
146.3
4.94
7.84
NE552R479A
V
D
= 3.5 V, I
D
= 200 mA
NE552R479A
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
Coordinates in Ohms
Frequency in GHz
V
D
=
3.5 V, I
D
= 200
mA
Note: This file and many other s-parameter files can be downloaded from www.cel.com
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
j50
j25
j10
0
10
25
-j10
-j25
-j50
-j100
j100
0
50
100
S
22
S
11
S
21
S
12
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
NE552R479A
APPLICATION CIRCUIT (2.40-2.48 GHz)
P.C.B. LAYOUT
(Units in mm)
79A PACKAGE
4.0
1.7
6.1
0.5
0.5
Source
Drain
Gate
5.9
1.2
1.0
0.5
Through hole
0.2
33
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
J1
C6
C4
C14
C7
RF INPUT
+Vg
J3
C5
NE552R479A
R1
C13
C11
C9
C3
C2
C8
C10
C1
J2
RF OUTPUT
C12
+Vd
J4
1
600S3R3CW
C14
0603 3.3 pF CAP ATC
17
1
TF-100637
TEST CIRCUIT BLK
15
4
2-56 x 3/16 PHILLIPS PAN HEAD
14
2
MCH185A101JK
C2,C3
0603 100pF CAP ROHM
13
1
MCR03J200
R1
0603 20 OHM RESISTOR ROHM
12
2
600S2R7BW
C4,C7
0603 2.7pF CAP ATC
11
2
600S5R6CW
C1,C5
0603 5.6pF CAP ATC
10
1
600S1R5CW
C6
0805 1.5pF CAP ATC
9
2
TAJB475K010R
C12, C13
CASE B 4.7 uF CAP AVX
8
2
MCH215F104ZP
C10, C11
0805 .1uF CAP ROHM
7
2
0805CG102J9BB04
C8, C9
0805 1000 pF CAP PHIL
6
1
NE552R479A
U1
IC NEC
5
1
703401
P1
GROUND LUG CONCORD
4
1
1250-003
J3, J4
FEEDTHRU MURATA
3
2
2052-5636-02
J1, J2
FLANGE MOUNT JACK RECEPTACLE
2
1
FD-500855B
PCB
S-BAND MODULE FABRICATION DRAWING
1
NE552R479A PARTS LIST
J3
J4
P1
GND
+VG
+VD
RF IN
RF OUT
C14
C7
TAB
er=4.2
t=0.028
IN
OU
500855B
C13
C12
C10
C8
C2
C3
C9
C11
C1
J2
J1
R1
U1
C4
C5
C6
AW
0X001
NE552R479A
TYPICAL APPLICATION CIRCUIT PERFORMANCE
(T
A
= 25
C)
Output Power, P
OUT
(dBm)
OUTPUT POWER vs.
INPUT POWER
Input Power, P
IN
(dBm)
IM3 vs.
OUTPUT POWER
Output Power, P
OUT
(dBm), Each Tone
8
10
12
34
f = 2.44 GHz
32
30
28
26
24
22
20
18
14
16
18
20
22
24
3.6 V, 100mA
3.6 V, 300mA
5 V, 100mA
5 V, 300mA
8 V, 100mA
8 V, 300mA
IM3 (dBc)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
6
8 10
-15
-10
-20
-25
-30
-35
-40
-45
-50
-60
-55
12 14 16 18 20 22 24 26
3.6 V, 100mA
3.6 V, 300mA
5 V, 100mA
5 V, 300mA
8 V, 100mA
8 V, 300mA
f = 2.44 GHz
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
3/31/2003
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