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Электронный компонент: NE687M03-T1-A

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PART NUMBER
NE687M03
EIAJ
1
REGISTERED NUMBER
2SC5436
PACKAGE OUTLINE
M03
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
GHz
9
14
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
GHz
7
12
NF
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
dB
1.3
2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
dB
1.3
2
|S
21E
|
2
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
8.5
10
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
dB
6
9.0
h
FE
2
Forward Current Gain at V
CE
= 2 V, I
C
= 20 mA
70
130
I
CBO
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
A
0.1
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
0.1
C
RE
3
Feedback Capacitance at V
CB
= 2 V, I
E
= 0, f = 1 MHz
pF
0.4
0.8

NE687M03
NEC's
NPN SILICON TRANSISTOR
NEW M03 PACKAGE:
Smallest transistor outline package available
Low profile/0.59 mm package height
Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 14 GHz
LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
NEC's NE687M03 transistor is designed for low noise, high
gain, and low cost requirements. This high f
T
part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE687 is also available in
six different low cost plastic surface mount package styles.
1
3
2
1.20.05
0.80.1
+0.1
-0.05
0.15
+0.1
-0
0.3
+0.1
-0
0.2
1.4 0.1
(0.9)
0.590.05
0.45
0.45
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
5
V
CEO
Collector to Emitter Voltage
V
3
V
EBO
Emitter to Base Voltage
V
2
I
C
Collector Current
mA
30
P
T
Total Power Dissipation
mW
90
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
Collector to Emmiter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
Collector Current, I
C
(mA)
DC Current Gain, h
FE
D.C. CURRENT GAIN
vs. COLECTOR CURRENT
Base to Emmiter Voltage, V
BE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
25
20
15
10
5
0
0
2.2
2.4
2.6
V
CE
= 1 V
V
CE
= 2 V
500
200
100
50
20
10
1
2
5
10
20
50
100
V
CE
= 2V
50
40
30
20
10
0
0.5
1.0
NE687M03
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE687M03-A
NE687M03-T1-A
Parameters
Q1
Parameters
Q1
IS
302.3e-18
MJC
0.53
BF
104
XCJC
0.27
NF
1.038
CJS
0
VAF
10
VJS
0.75
IKF
0.370
MJS
0
ISE
1e-6
FC
0.37
NE
31.19
TF
5e-12
BR
17.54
XTF
8
NR
1.023
VTF
0.06
VAR
30
ITF
1.0
IKR
8.369e-3
PTF
69.1
ISC
81.93e-12
TR
1.e-9
NC
4.986
EG
1.11
RE
0.80
XTB
0
RB
11.10
XTI
3
RBM
2.46
KF
0
IRB
17e-3
AF
1
RC
4.477
CJE
0.415e-12
VJE
0.68
MJE
0.53
CJC
0.102e-12
VJC
0.8
(1) Gummel-Poon Model
SCHEMATIC
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
Parameters
687M03
C
CB
0.26e-12
C
CE
0.19e-12
L
B
0.4e-9
L
E
0.7e-9
C
CBPKG
0.08e-12
C
CEPKG
0.08e-12
L
BX
0.12e-9
L
CX
0.10e-9
L
EX
0.12e-9
ADDITIONAL PARAMETERS
UNITS
MODEL TEST CONDITIONS
Frequency: 0.1 to 5.0 GHz
Bias:
V
CE
= 0.5 V to 2.5 V, I
C
= 0.5 mA to 30 mA
Date:
11/98
hFE = 108 at 2 V, 20 mA
BJT NONLINEAR MODEL PARAMETERS
(1)
Base
Emitter
Collector
L
BX
L
B
L
EX
L
E
L
CX
C
CBPKG
C
CB
C
CE
C
CEPKG
Q1
NE687M03 NONLINEAR MODEL
NE687M03
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
04/26/2004
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE687M03-A
NE687M03-T1-A
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
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