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Электронный компонент: NE851M13

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NE851M13
NEC's NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
 Small transistor outline
1.0 X 0.5 X 0.5 mm
Low profile / 0.50 mm package height
Flat lead style for better RF performance
IDEAL FOR
3 GHz OSCILLATORS
LOW PHASE NOISE
LOW PUSHING FACTOR
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
PART NUMBER
NE851M13
EIAJ
1
REGISTERED NUMBER
2SC5801
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
GHz
3.0
4.5
f
T
Gain Bandwidth
at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
GHz
5.0
6.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
dB
3.0
4.0
|S
21E
|
2
Insertion Power Gain
at V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
dB
4.5
5.5
NF
Noise Figure at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
dB
1.9
2.5
C
RE
Reverse Transfer Capacitance
3
at V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
pF
0.6
0.8
I
CBO
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
nA
600
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
600
h
FE
DC Current Gain
2
at V
CE
= 1 V, I
C
= 5 mA
100
120
145
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
3. Collector to base capacitance when the emitter is grounded
DESCRIPTION
NEC's NE851M13 transistor is designed for oscillator applica-
tions up to 3 GHz. The NE851M13 features low voltage
operation, low phase noise, and high immunty to pushing
effects. NEC's new low profile/flat lead style "M13" package is
ideal for today's portable wireless applications.
California Eastern Laboratories
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
0.125
+0.1 0.05
0.50.05
0.1
0.1
0.2
+0.1 0.05
0.35
0.7
0.35
0.15
+0.1 0.05
0.15
+0.1 0.05
1.0
+0.1 0.05
0.5
+0.1
0.05
0.70.05
1
2
3
E7
0.3
0.2
0.2
(Bottom View)
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm
2
X 1.0 mm glass epoxy board.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9
V
CEO
Collector to Emitter Voltage
V
5.5
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
100
P
T2
Total Power Dissipation
mW
140
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
Ambient Temperature, T
A
(C)
Total Power Dissipation, P
tot
(mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
Collector to Base Voltage, V
CB
(V)
Reverse Transfer Capacitance, C
re
(pF)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
Mounted on Glass Epoxy PCB
(1.08 cm2 1.0mm(t) )
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0
1
2
3
4
5
6
7
8
9
NE851M13
V
CE
= 2 V
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, V
BE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
PART NUMBER
QUANTITY
NE851M13-T3-A
10 k pcs./reel
ORDERING INFORMATION
Collector Current, I
C
(mA)
Collector to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
30
40
50
10
20
0
1
2
3
4
5
6
7
I
B
= 40 A
320 A
280 A
240 A
200 A
160 A
120 A
80 A
360 A
400 A
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
NE851M13
Collector Current, I
C
(mA)
Gain Bandwidth Product, f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 2 GHz
10
8
6
4
2
0
10
1
100
10
8
6
4
2
0
1
10
100
V
CE
= 2 V
f = 2 GHz
Gain Bandwidth Product, f
T
(GHz)
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
INSERTION POWER GAIN vs.
FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
35
20
25
30
5
10
15
0
0.1
1
10
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
INSERTION POWER GAIN vs.
FREQUENCY
35
30
25
20
15
10
5
0
0.1
1
10
V
CE
= 2 V
I
C
= 5 mA
INSERTION POWER GAIN vs.
FREQUENCY
V
CE
= 1 V
I
C
= 15 mA
35
20
25
30
5
10
15
0
0.1
1
10
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
INSERTION POWER GAIN vs.
FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
V
CE
= 2 V
I
C
= 15 mA
35
20
25
30
5
10
15
0
0.1
1
10
NE851M13
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 1 GHz
20
15
5
10
0
1
10
100
MAG
MSG
|S
21e
|
2
|S21e|
2
MAG
MSG
V
CE
= 2 V
f = 1 GHz
20
15
10
5
0
1
10
100
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 2 GHz
15
10
0
5
-5
1
10
100
MAG
|S
21e
|
2
MAG
V
CE
= 2 V
f = 2 GHz
15
10
5
0
-5
1
10
100
|S
21e
|
2
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 4 GHz
10
5
-5
0
-10
1
10
100
MAG
MSG
|S
21e
|
2
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 4 GHz
10
5
-5
0
-10
1
10
100
MAG
MSG
|S
21e
|
2
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
NE851M13
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
2
1
0
18
15
12
9
6
3
0
1
10
100
V
CE
= 1 V
f = 1 GHz
NF
G
a
Associated Gain, G
a
(dB)
NF
G
a
V
CE
= 2 V
f = 1 GHz
6
5
4
3
2
1
10
100
0
1
0
3
6
9
12
15
19
Noise Figure, NF (dB)
Collector Current, I
C
(mA)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, G
a
(dB)
6
5
4
3
2
1
0
18
15
12
9
6
3
0
1
10
100
V
CE
= 1 V
f = 2 GHz
NF
G
a
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, G
a
(dB)
NF
G
a
V
CE
= 2 V
f = 2 GHz
6
5
4
3
2
1
10
100
0
1
0
3
6
9
12
15
18
Noise Figure, NF (dB)
Collector Current, I
C
(mA)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain, G
a
(dB)
V
CE
= 2 V, f = 1 GHz
I
cq
= 5 mA (RF OFF)
25
20
15
10
5
0
-5
-10
-15
-20
-15
-10
-5
0
5
10
0
10
20
30
40
50
60
70
80
P
out
I
C
Input Power, P
IN
(dBm)
Output Power, P
OUT
(dBm)
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
Collector Current, I
C
(mA)
25
20
15
10
5
0
-5
-10
-15
-20
-15
-10
-5
0
5
10
80
70
60
50
40
30
20
10
0
P
out
I
C
V
CE
= 2 V, f = 2 GHz
I
cq
= 5 mA (RF OFF)
Input Power, P
IN
(dBm)
Output Power, P
OUT
(dBm)
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
Collector Current, I
C
(mA)