NE851M33
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories
LOW PHASE DISTORTION, LOW VOLTAGE OPERATION
IDEAL FOR OSC APPLICATIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
FEATURES
DATA SHEET
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NE851M33-A
50 pcs (Non reel)
8 mm wide embossed taping
Pin 2 (Base) face the perforation side of the tape
NE851M33-T3-A
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
9.0
V
Collector to Emitter Voltage
V
CEO
5.5
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
tot
Note
130
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-
65 to +150
C
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE851M33
ELECTRICAL CHARACTERISTICS
(T
A
=+25C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
600
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0 mA
600
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 5 mA
100
120
145
RF Characteristics
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
3.0
4.5
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
5.0
6.5
GHz
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
3.0
4.0
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
4.5
5.5
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
1.9
2.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 0.5 V, I
C
= 0 mA, f = 1 MHz
0.6
0.8
pF
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
RANK
FB
Marking
E7
h
FE
Value
100 to 145
NE851M33
TYPICAL CHARACTERISTICS
(T
A
=+25C, unless otherwise specified)
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
f = 1 MHz
1.0
0.4
0.2
0
2
4
6
8
10
400 A
200 A
240 A
280 A
320 A
360 A
0.8
0.6
25
50
75
100
125
150
200
150
100
50
0
130
250
60
10
20
40
0
50
30
1
2
3
4
5
6
7
160 A
120 A
80 A
I
B
= 40 A
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current
I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Reverse T
ransfer Capacitance
C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(C)
T
otal Power Dissipation
P
to
t
(mW)
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Mounted on Glass Epoxy PCB
(1.08 cm
2
1.0 mm (t) )
Remark The graphs indicate nominal characteristics.
NE851M33
TYPICAL CHARACTERISTICS
(T
A
=+25C, unless otherwise specified)
V
CE
= 1 V
1,000
100
10
1
0.1
10
100
V
CE
= 2 V
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1,000
100
10
1
0.1
10
100
V
CE
= 1 V
Remark The graphs indicate nominal characteristics.
NE851M33
PACKAGE DIMENSIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33)
(UNIT: mm)
0.15
0.57
0.285
0.125
0.440.05
1
2
3
(Bottom View)
0.15
0.840.05
0.125
0.15
0.640.05
0.1
1
0.4
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
E
7
NE package code: M33
SOT number:
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
06/07/2004
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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