1
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG3031M14
FEATURES
THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE,
HIGH-GAIN AMPLIFICATION:
NF = 0.95 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., G
a
= 9.5 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz
MAXIMUM STABLE POWER GAIN:
MSG = 15.0 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
SiGe HBT TECHNOLOGY (UHS3) ADOPTED:
f
max
= 110 GHz
M14 PACKAGE:
4-pin lead-less minimold package
California Eastern Laboratories
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
DATASHEET
M14 Package
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG3031M14-A
50 pcs (Non reel)
8 mm wide embossed taping
Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
NESG3031M14-T3-A
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
12.0
V
Collector to Emitter Voltage
V
CEO
4.3
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
35
mA
Total Power Dissipation
P
tot
Note
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-
65 to +150
C
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PWB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
2
NESG3031M14
ELECTRICAL CHARACTERISTICS
(T
A
= +25C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0 mA
-
-
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 2 V, I
C
= 6 mA
220
300
380
-
RF Characteristics
Insertion Power Gain
| S
21e
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
6.5
9.0
-
dB
Noise Figure (1)
NF
V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
-
0.95
-
dB
Noise Figure (2)
NF
V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
-
1.1
1.5
dB
Associated Gain (1)
G
a
V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
-
10.0
-
dB
Associated Gain (2)
G
a
V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
7.5
9.5
-
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
-
0.15
0.25
pF
Maximum Stable Power Gain
MSG
Note 3
V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
12.0
15.0
-
dB
Gain 1 dB Compression Output Power
P
O (1 dB)
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 5.8 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
-
13.0
-
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP
3
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 5.8 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
-
18.0
-
dBm
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MSG = S
21
S
12
h
FE
CLASSIFICATION
RANK
FB
Marking
zJ
h
FE
Value
220 to 380
3
NESG3031M14
TYPICAL CHARACTERISTICS
(T
A
= 25C, unless otherwise specified)
0.3
0.2
0
2
4
6
8
10
f = 1 MHz
0.1
V
CE
= 1 V
10
1
0.1
0.001
0.0001
0.01
0.00001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
100
V
CE
= 2 V
10
1
0.1
0.001
0.0001
0.01
0.00001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
100
V
CE
= 3 V
10
1
0.1
0.001
0.0001
0.01
0.00001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
100
20
40
30
10
0
2
1
3
5
I
B
= 20 A
40 A
60 A
80 A
100 A
120 A
140 A
160 A
180 A
200 A
4
T
o
tal Power Dissipation
P
to
t
(mW)
Ambient Temperature T
A
(C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on glass epoxy PWB
(1.08 cm
2
1.0 mm (t))
Reverse T
ransfer Capacitance
C
re
(p
F)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current
I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
250
200
150
100
50
0
25
50
75
100
125
150
Remark The graphs indicate nominal characteristics.
4
NESG3031M14
Remark The graphs indicate nominal characteristics.
30
25
20
10
5
0
1
10
100
V
CE
= 1 V
f = 2 GHz
15
30
20
15
10
5
0
1
10
100
V
CE
= 2 V
f = 2 GHz
25
30
20
15
10
5
0
1
10
100
V
CE
= 3 V
f = 2 GHz
25
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product
f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product
f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product
f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1,000
100
10
10
0.1
100
V
CE
= 1 V
1
1,000
100
10
10
0.1
100
V
CE
= 2 V
1
1,000
100
10
10
0.1
100
V
CE
= 3 V
1
5
NESG3031M14
30
25
20
15
10
5
0
1
100
MAG
MSG
|S
21e
|
2
V
CE
= 1 V
I
C
= 20 mA
V
CE
= 2 V
I
C
= 20 mA
30
25
20
15
10
5
0
1
10
100
MAG
MSG
|S
21e
|
2
10
MSG
MAG
V
CE
= 3 V
I
C
= 20 mA
30
25
20
15
10
5
0
1
10
100
MAG
MSG
|S
21e
|
2
MSG
MAG
V
CE
= 1 V
f = 2.4 GHz
30
25
15
10
0
1
10
100
|S
21e
|
2
20
5
MAG
MSG
V
CE
= 2 V
f = 2.4 GHz
30
25
15
10
0
1
10
100
|S
21e
|
2
20
5
MAG
MSG
V
CE
= 3 V
f = 2.4 GHz
30
25
15
10
0
1
10
100
|S
21e
|
2
20
5
MAG
MSG
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum A
vailable Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum A
vailable Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum A
vailable Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum A
vailable Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum A
vailable Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum A
vailable Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Remark The graphs indicate nominal characteristics.
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