NECs 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE
FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
NX5307 SERIES
FEATURES
OPTICAL OUTPUT POWER:
P
O
= 10 mW
LOW THRESHOLD CURRENT :
I
TH
= 10 mA
HIGH SPEED:
t
r
= 0.2 ns MAX
t
f
= 0.2 ns MAX
WIDE OPERATING TEMPERATURE RANGE:
T
C
= -40 to +85C
InGaAs MONITOR PIN-PD
CAN PACKAGE:
5.6 mm
BASED ON TELCORDIA RELIABILITY
NECs NX5307 series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. This device is ideal for Synchronous Digital
Hierarchy (SDH) systems, intra-office STM-16 (I-16), and
ITU-T recommendations.
DESCRIPTION
California Eastern Laboratories
NX5307 SERIES
ORDERING INFORMATION
PART NUMBER
PACKAGE
PIN CONNECTIONS
NX5307EH-AZ*
4-pin CAN with ball lens cap
1
2
3
4
LD
PD
NX5307EK-AZ*
1
4
3
2
LD
PD
Remarks 1. The color of ball lens cap might be observed differently from our can package products.
2. The hermetic test will be performed as AQL 1.0%.
*NOTE:
Please refer to the last page of this data sheet, "Compliance with EU Directives" for Pb-Free RoHS Compliance Infomation.
NX5307 SERIES
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Optical Output Power
P
o
20
mW
Forward Current of LD
I
F
150
mA
Reverse Voltage of LD
V
R
2.0
V
Forward Current of PD
I
F
10
mA
Reverse Voltage of PD
V
R
20
V
Operating Case Temperature
T
C
-
40 to +85
C
Storage Temperature
T
stg
-
40 to +85
C
Assembly Temperature
T
asb
150 (15 Hr)
C
Lead Soldering Temperature
T
sld
350 (3 sec.)
C
Relative Humidity (noncondensing)
RH
85
%
RECOMMENDED OPERATING CONDITION
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Modulation Current
I
mod
T
C
= 25C
25
mA
NX5307 SERIES
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -25C, unless otherwise specified)
*1 Tracking Error:
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Operating Voltage
V
op
P
o
= 10 mW, T
C
= -40 to +85C
1.1
1.5
V
Threshold Current
I
th
10
15
mA
T
C
= 85C
25
30
Threshold Output Power
P
th
T
C
= -40 to +85C, I
F
= I
th
100
200
W
Optical Output Power
P
o
T
C
= -40 to +85C, I
F
= I
th
8
10
mW
Differential Efficiency
d
0.32
0.4
W/A
Temperature Dependence of
Differential Efficiency
d
d
= 10 log
-
3.0
-
1.2
dB
Modulation Current
I
mod
T
C
= 85C
50
mA
Center Wavelength
C
P
o
= 10 mW, RMS (-20 dB)
T
C
= -40 to +85C
1 266
1 360
nm
Temperature Dependence of
Center Wavelength
/T
T
C
= -40 to +85C
0.4
0.5
nm/
C
Spectral Width
P
o
= 10 mW, RMS (-20 dB)
T
C
= -40 to +85C
1.0
2.5
nm
Rise Time
t
r
10-90%
0.15
0.2
ns
Fall Time
t
f
90-10%
0.15
0.2
ns
Monitor Current
I
m
V
R
= 5 V, I
F
= I
th
+25 mA
300
600
1 200
A
Monitor Dark Current
I
D
V
R
= 5 V
0.1
10
nA
V
R
= 5 V, T
C
= -40 to +85C
500
nA
Monitor PD Terminal Capacitance
C
t
V
R
= 5 V, f = 1 MHz
6
20
pF
Tracking Error
*1
I
m
= const. (@ P
o
= 10 mW, T
C
= 25C)
-
1.0
1.0
dB
d
(@85C)
d
(@25C)
0
I
m
I
m
T
C
= 25C
T
C
= -40 to +85C
P
o
(mW)
P
o
10
(mA)
= 10 log
[dB]
P
o
10
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