66
Central
Semiconductor Corp.
TM
SOT-223 CASE
CBCP68 NPN
CBCP69 PNP
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCP68,
CBCP69 types are complementary silicon
transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Emitter Voltage
VCES
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Collector Current-Peak
ICM
2.0
A
Base Current
IB
100
mA
Base Current-Peak
IBM
200
mA
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
Q
JA
62.5
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=25V
10
m
A
ICBO
VCB=25V, TA=150
o
C
1.0
mA
IEBO
VEB=5.0V
10
m
A
BVCBO
IC=10
m
A
25
V
BVCEO
IC=10mA
20
V
BVEBO
IE=1.0
m
A
5.0
V
VCE(SAT)
IC=1.0A, IB=100mA
0.5
V
VBE(ON)
VCE=10V, IC=5.0mA
0.6
V
VBE(ON)
VCE=1.0V, IC=1.0A
1.0
V
hFE
VCE=10V, IC=5.0mA
50
R2
67
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
hFE
VCE=1.0V, IC=500mA
85
375
hFE
VCE=1.0V, IC=1.0A
60
fT
VCE=5.0V, IC=10mA, f=20MHz
65
MHz
Cob
VCB=5.0V, IE=0, F=450kHz
25
pF
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
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