DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD3003DO
type contains Two (2) Isolated Opposing Configuration,
Silicon Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a PICOmini
TM
surface
mount package. These devices are designed for
switching applications requiring extremely low leakage.
MARKING CODE: C30
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
180
V
Average Rectified Current
IO
200
mA
Continuous Forward Current
IF
600
mA
Peak Repetitive Forward Current
IFRM
700
mA
Forward Surge Current, tp=1 sec.
IFSM
2.0
A
Forward Surge Current, tp=1 sec.
IFSM
1.0
A
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=125V
1.0
nA
IR
VR=125V, TA=150C
3.0
A
IR
VR=180V
10
nA
IR
VR=180V, TA=150C
5.0
A
BVR
IR=5.0A
200
V
VF
IF=1.0mA
0.62
0.72
V
VF
IF=10mA
0.72
0.83
V
VF
IF=50mA
0.80
0.89
V
VF
IF=100mA
0.83
0.93
V
VF
IF=200mA
0.87
1.10
V
VF
IF=300mA
0.90
1.15
V
CT
VR=0, f=1 MHz
4.0
pF
CMLD3003DO
SURFACE MOUNT
PICOmini
TM
DUAL, ISOLATED, OPPOSING
LOW LEAKAGE SILICON
SWITCHING DIODES
Central
Semiconductor Corp.
TM
R0 (07-June 2004)
SOT-563 CASE
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