MAXIMUM RATINGS (SOT-563 Package): (TA=25C)
SYMBOL
UNITS
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
MAXIMUM RATINGS Q1: (TA=25C)
SYMBOL
UNITS
Drain-Source Voltage
VDS
60
V
Drain-Gate Voltage
VDG
60
V
Gate-Source Voltage
VGS
40
V
Continuous Drain Current
ID
280
mA
Continuous Source Current (Body Diode)
IS
280
mA
Maximum Pulsed Drain Current
IDM
1.5
A
Maximum Pulsed Source Current
ISM
1.5
A
MAXIMUM RATINGS D1: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IGSSF
VGS=20V, VDS=0V
100
nA
IGSSR
VGS=20V, VDS=0V
100
nA
IDSS
VDS=60V, VGS=0V
1.0
A
IDSS
VDS=60V, VGS=0V, Tj=125C
500
A
ID(ON)
VGS=10V, VDS 2VDS(ON)
500
mA
BVDSS
VGS=0V, ID=10A
60
V
VGS(th)
VDS=VGS, ID=250A
1.0
2.5
V
VDS(ON)
VGS=10V, ID=500mA
1.0
V
VDS(ON)
VGS=5.0V, ID=50mA
0.15
V
rDS(ON)
VGS=10V, ID=500mA
2.0
rDS(ON)
VGS=10V, ID=500mA, Tj=125C
3.5
rDS(ON)
VGS=5.0V, ID=50mA
3.0
rDS(ON)
VGS=5.0V, ID=50mA, Tj=125C
5.0
gFS
VDS 2VDS(ON), ID=200mA
80
mmhos
CMLM0205
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (12-October 2004)
DESCRIPTION:
The Central Semiconductor CMLM0205 is a
Multi Discrete Module
TM
consisting of a single
N-Channel MOSFET and a Low VF Schottky diode
packaged in a space saving PICOminiTM SOT-563
case. This device is designed for small signal
general purpose applications where size and
operational efficiency are prime requirements.
Combination: N-Channel MOSFET and
Low VF Schottky Diode.
MARKING CODE: C25
TM
Central
Semiconductor Corp.
TM
CMLM0205
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
R0 (12-October 2004)
ELECTRICAL CHARACTERISTICS Q1
(continued)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Crss
VDS=25V, VGS=0, f=1.0MHz
5.0
pF
Ciss
VDS=25V, VGS=0, f=1.0MHz
50
pF
Coss
VDS=25V, VGS=0, f=1.0MHz
25
pF
ton
VDD=30V, VGS=10V, ID=200mA,
20
ns
toff
RG=25, RL=150
20
ns
VSD
VGS=0V, IS=400mA
1.2
V
ELECTRICAL CHARACTERISTICS D1 (TA=25C)
IR
VR= 10V
20
A
IR
VR= 30V
100
A
BVR
IR= 500A
40
V
VF
IF= 100A
0.13
V
VF
IF= 1.0mA
0.21
V
VF
IF= 10mA
0.27
V
VF
IF= 100mA
0.35
V
VF
IF= 500mA
0.47
V
CT
VR= 1.0V, f=1.0 MHz
50
pF
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) GATE Q1
2) SOURCE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) DRAIN Q1
MARKING CODE: C25
PDF 
ZIP