MAXIMUM RATINGS (SOT-563 Package): (TA=25C)
SYMBOL
UNITS
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
MAXIMUM RATINGS Q1: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
200
mA
MAXIMUM RATINGS D1: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
-
-
50
nA
BVCBO
IC=10A
60 120
-
V
BVCEO
IC=1.0mA
40
60
-
V
BVEBO
IE=10A
6.0
7.5
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.057
0.100
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.090
0.200
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
0.95
V
hFE
VCE=1.0V, IC=0.1mA
90
180
hFE
VCE=1.0V, IC=1.0mA
100 185
hFE
VCE=1.0V, IC=10mA
100
180
300
hFE
VCE=1.0V, IC=50mA
70
150
hFE
VCE=1.0V, IC=100mA
30
90
fT
VCE=20V, IC=10mA, f=100MHz
300
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
8.0
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
12
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
10
X10-4
CMLM0405
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
LOW VCE (SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
Central
Semiconductor Corp.
TM
R1 (22-February 2005)
DESCRIPTION:
The Central Semiconductor CMLM0405 is a single
NPN Transistor and Schottky Diode packaged in a
space saving SOT-563 case and designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
Complementary Device: CMLM0605
Combination Low VCE (SAT) Transistor and
Low VF Schottky Diode.
MARKING CODE: C45
TM
Central
Semiconductor Corp.
TM
CMLM0405
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
LOW VCE (SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
R1 (22-February 2005)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
60
mhos
NF
VCE=5.0V,IC=100A, RS =1.0K,
4.0
dB
f=10Hz to 15.7kHz
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
200
ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
ns
ELECTRICAL CHARACTERISTICS D1 (TA=25C)
IR
VR= 10V
20
A
IR
VR= 30V
100
A
BVR
IR= 500A
40
V
VF
IF= 100A
0.13
V
VF
IF= 1.0mA
0.21
V
VF
IF= 10mA
0.27
V
VF
IF= 100mA
0.35
V
VF
IF= 500mA
0.47
V
CT
VR= 1.0V, f=1.0 MHz
50
pF
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
MARKING CODE: C45
ELECTRICAL CHARACTERISTICS Q1
(continued)
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