MAXIMUM RATINGS (SOT-563 Package): (TA=25C)
SYMBOL
UNITS
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
MAXIMUM RATINGS Q1: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
90
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
MAXIMUM RATINGS D1: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=50V
10
nA
ICBO
VCB=50V, TA=125C
10
A
ICEV
VCE=30V, VBE=0.5V
50
nA
BVCBO
IC=10A
90
115
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10A
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.113
0.2
V
VCE(SAT)
IC=500mA, IB=50mA
0.280
0.7
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
2.6
V
hFE
VCE=10V, IC=0.1mA
100
205
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
75
110
CMLM0705
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
SILICON SWITCHING PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (06-October 2004)
DESCRIPTION:
The Central Semiconductor CMLM0705 is a
Multi Discrete Module
TM
consisting of a single PNP
Transistor and a Schottky Diode packaged in a space
saving PICOminiTM SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
Combination: Small Signal Switching PNP Transistor
and Low VF Schottky Diode.
Complementary Device: CMLM2205
MARKING CODE: C75
TM
Central
Semiconductor Corp.
TM
CMLM0705
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
SILICON SWITCHING PNP TRANSISTOR AND
LOW VF SILICON SCHOTTKY DIODE
R0 (06-October 2004)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
fT
VCE=20V, IC=50mA, f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VBE=2.0V, IC=0, f=1.0MHz
30
pF
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
ns
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
40
ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ns
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
ns
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
ns
ELECTRICAL CHARACTERISTICS D1 (TA=25C)
IR
VR= 10V
20
A
IR
VR= 30V
100
A
BVR
IR= 500A
40
V
VF
IF= 100A
0.13
V
VF
IF= 1.0mA
0.21
V
VF
IF= 10mA
0.27
V
VF
IF= 100mA
0.35
V
VF
IF= 500mA
0.47
V
CT
VR= 1.0V, f=1.0 MHz
50
pF
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
MARKING CODE: C75
ELECTRICAL CHARACTERISTICS Q1
(continued)
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