DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5551
consists of two individual, isolated NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563
surface mount package. This PICOminiTM
devices has been designed for small signal
general purpose and switching applications.
MARKING CODE: 5C5
MAXIMUM RATINGS: (TA=25
O
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
O
C
Thermal Resistance
JA
357
O
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25
O
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=120V
50
nA
ICBO
VCB=120V, TA=100C
50
A
BVCBO
IC=100A
180
V
BVCEO
IC=1.0mA
160
V
BVEBO
IE=10A
6.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
V
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
fT
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
pF
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200A, RS=10
8.0
dB
f=10Hz to 15.7kHz
CMLT5551
SURFACE MOUNT
PICOmini
TM
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (15-October 2004)
PDF 
ZIP