Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
190
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
CMPT6428
CMPT6429
UNITS
Collector-Base Voltage
VCBO
60
55
V
Collector-Emitter Voltage
VCEO
50 45
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
200
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
CMPT6428
CMPT6429
SYMBOL
TEST CONDITIONS
MIN MAX
MIN
MAX UNITS
ICBO
VCB=30V
10
10
nA
ICEO
VCE=30V
100
100
nA
IEBO
VBE=5.0V
10
10
nA
BVCBO
IC=100
A
60
55
V
BVCEO
IC=1.0mA
50
45
V
VCE(SAT)
IC=10mA, IB=0.5mA
0.20
0.20
V
VCE(SAT)
IC=100mA, IB=5.0mA
0.60
0.60
V
VBE(ON)
VCE=5.0V, IC=1.0mA
0.56 0.66 0.56
0.66
V
hFE
VCE=5.0V, IC=10
A
250
500
hFE
VCE=5.0V, IC=100
A
250 650
500
1250
hFE
VCE=5.0V, IC=1.0mA
250
500
hFE
VCE=5.0V, IC=10mA
250
500
fT
VCE=5.0V, IC=1.0mA, f=100MHz 100 700
100
700
MHz
SOT-23 CASE
CMPT6428
CMPT6429
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT6428, CMPT6429 types are NPN Silicon
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for high gain
amplifier applications.
Marking Codes are C1K and C1L
Respectively.
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