PRINCIPAL DEVICE TYPES

1N5817
1N5818
1N5819

CXSH-4

CZSH-4

Process

EPITAXIAL PLANAR

Die Size

52 X 52 MILS

Die Thickness

9 MILS

Anode Bonding Pad Area

47 X 47 MILS

Top Side Metalization

Al - 20,000�

Back Side Metalization

Au - 10,000�

PROCESS DETAILS

R8 (9 -September 2003)

GEOMETRY

BACKSIDE CATHODE

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

GROSS DIE PER 4 INCH WAFER

5,110

Central

Semiconductor Corp.

PROCESS

CP108

Schottky Rectifier