Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP195
Small Signal Transistor
NPN - Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N5682
2N3501
GEOMETRY
PROCESS DETAILS
BACKSIDE COLLECTOR
R2 (1 -August 2002)
Process
EPITAXIAL PLANAR
Die Size
30 x 30 MILS
Die Thickness
7.0 MILS
Base Bonding Pad Area
8.0 x 8.0 MILS
Emitter Bonding Pad Area
7.6 x 7.6 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 10,000
GROSS DIE PER 4 INCH WAFER
12,550
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM
PROCESS
CP195
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1 -August 2002)
Central
Semiconductor Corp.
TM
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