PRINCIPAL DEVICE TYPES
2N4416A
CMPF4416A
Process
EPITAXIAL PLANAR
Die Size
15 x 15 MILS
Die Thickness
8.0 MILS
Drain Bonding Pad Area
3.2 X 4.0 MILS
Source Bonding Pad Area
3.2 X 4.0 MILS
Gate Bonding Pad Area
3.2 X 4.0 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 6,000
PROCESS DETAILS
BACKSIDE GATE
GEOMETRY
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax:
(631) 435-1824
www.centralsemi.com
R3 (9 -September 2003)
GROSS DIE PER 4 INCH WAFER
53,730
Central
Semiconductor Corp.
TM
PROCESS
CP210
Small Signal Transistors
N - Channel Silicon Amplifer J FET Chip
PROCESS
CP210
Typical Electrical Characteristics
0
4
8
12
16
0
4
8
12
16
20
VDS, Drain-Source Voltage (V)
VGS = 0V
-0.5V
-1.0V
-1.5V
-2.0V
-2.5V
-3.0V
-3.5V
-4.0V
TA = 25C
TYP. VGS(OFF) = -5.0V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.2
0.4
0.6
0.8
1
VDS, Drain-Source Voltage (V)
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
VGS = 0V
-0.5V
-1.0V
TA = 25C
TYP. VGS(OFF) = -5.0V
0
0.4
0.8
1.2
1.6
0
4
8
12
16
20
VDS, Drain-Source Voltage (V)
VGS = 0V
-0.1V
-0.2V
-0.3V
-0.4V
-0.5V
-0.6V
TA = 25C
TYP. VGS(OFF) = -1.2V
0
0.2
0.4
0.6
0.8
1
1.2
0
0.4
0.8
1.2
1.6
2
VDS, Drain-Source Voltage (V)
TA = 25C
TYP. VGS(OFF) = -1.2V
VGS = 0V
-0.1V
-0.2V
-0.3V
-0.4V
-0.5V
-0.6V
0
1
2
3
4
5
0.1
1
10
ID, Drain Current (mA)
TA = -55C
TA = 25C
TA = 125C
VDG = 15V
f = 1kHz
VGS(OFF) = -5.0V
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (9 -September 2003)
Central
Semiconductor Corp.
TM
PROCESS
CP210
Typical Electrical Characteristics
0
2
4
6
8
10
12
14
16
0
0.8
1.6
2.4
3.2
4
V
GS
, Gate-Source Voltage (-V)
VGS(OFF) = -5.0V
-1.2V
VDS = 15V
TA = 25C
-2.3V
0
100
200
300
400
500
600
700
800
900
-50
0
50
100
150
T
A
, Ambient Temperature (C)
VGS(OFF) = -1.2V
-2.3V
-5.0V
VDS = 100mV
VGS = 0
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (9 -September 2003)
Central
Semiconductor Corp.
TM
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