PROCESS

PRINCIPAL DEVICE TYPES

PROCESS
DIE SIZE
DIE THICKNESS
BASE BONDING PAD AREA
EMITTER BONDING PAD AREA
TOP SIDE METALIZATION
BACK SIDE METALIZATION

145 Adams Avenue

Hauppauge, NY 11788 USA

Phone

(631) 435-1110

Fax

(631) 435-1824

w w w . c e n t r a l s e m i . c o m

PROCESS DETAILS

Please refer to
selection guide on page .

GEOMETRY

Central

Semiconductor Corp.

CP215

EPITAXIAL PLANAR
21 x 21 MILS
9.0 MILS
4.3 x 4.3 MILS
5.0 x 5.0 MILS
Al - 15,000�
Au - 10,000�

2N3725
2N3725A
MPQ3725
MPQ3725A

NPN - Saturated Switch Transistor Chip

Small Signal Transistors

BACKSIDE COLLECTOR