PROCESS
CP229
Small Signal Transistors
NPN - RF Transistor Chip
PRINCIPAL DEVICE TYPES
2N5109
Process
EPITAXIAL PLANAR
Die Size
21.7 x 21.7 MILS
Die Thickness
8.7 MILS
Base Bonding Pad Area
3.2 MILS Diameter
Emitter Bonding Pad Area
3.4 x 3.4 MILS
Top Side Metalization
Al - 10,000
Back Side Metalization
Au - 10,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
R0 (23- September 2005)
GROSS DIE PER 4 INCH WAFER
17,000
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