Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP237
Small Signal Transistor
NPN - Saturated Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N3725
2N3725A
MPQ3725
MPQ3725A
GEOMETRY
PROCESS DETAILS
BACKSIDE COLLECTOR
R2 (1-August 2002)
Process
EPITAXIAL PLANAR
Die Size
30 x 30 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Area
4.4 x 12.5 MILS
Emitter Bonding Pad Area
4.4 x 12.5 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 12,000
GROSS DIE PER 4 INCH WAFER
12,550
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM
PROCESS
CP237
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
Central
Semiconductor Corp.
TM
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