Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP268
Power Transistor
NPN - High Voltage Transistor Chip
PRINCIPAL DEVICE TYPES
BUY49S
BSW68
GEOMETRY
PROCESS DETAILS
R1 (1-August 2002)
BACKSIDE COLLECTOR
Process
EPITAXIAL PLANAR
Die Size
63 x 63 MILS
Die Thickness
10 MILS
Base Bonding Pad Area
9 x 12 MILS
Emitter Bonding Pad Area
10 x 18 MILS
Top Side Metalization
Al - 16,000
Back Side Metalization
Au - 12,000
GROSS DIE PER 4 INCH WAFER
2,840
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM
PROCESS
CP268
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
Central
Semiconductor Corp.
TM
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