Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP287
Power Transistor
8.0 Amp NPN Silicon Power Transistor Chip
PRINCIPAL DEVICE TYPES
MJE13007
GEOMETRY
PROCESS DETAILS
R0 (26-July 2005)
Die Size
130 x 130 MILS
Die Thickness
9.5 MILS
Base Bonding Pad Area
37 x 20 MILS
Emitter Bonding Pad Area
38 x 20 MILS
Top Side Metalization
Al - 45,000
Back Side Metalization
Ti/Ni/Ag - (3000, 10,000, 10,000)
GROSS DIE PER 4 INCH WAFER
974
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