Central
Semiconductor Corp.
TM
PROCESS
CPD65
Low Leakage Diode
Picoampere Diode Chip
PRINCIPAL DEVICE TYPES
BAV45
Process
EPITAXIAL PLANAR
Die Size
9.5 X 9.5 MILS
Die Thickness
7.5 MILS
Anode Bonding Pad Area
2.5 MILS DIAMETER
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 13,000
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R1 (1-August 2002)
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
125,200
Central
Semiconductor Corp.
TM
PROCESS
CPD65
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
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