PROCESS
CP315V
Power Transistors
NPN - High Current Transistor Chip
PRINCIPAL DEVICE TYPES
CXT3150
CZT3150
Process
Epitaxial Planar
Die Size
40 x 40 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Area
7.9 x 8.7 MILS
Emitter Bonding Pad Area
9.0 x 14 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 18,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
R0 (5- January 2006)
GROSS DIE PER 4 INCH WAFER
6,936
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