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Электронный компонент: CP589

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PROCESS
PRINCIPAL DEVICE TYPES
PROCESS
DIE SIZE
DIE THICKNESS
BASE BONDING PAD AREA
EMITTER BONDING PAD AREA
TOP SIDE METALIZATION
BACK SIDE METALIZATION
55
145 Adams Avenue
Hauppauge, NY 11788 USA
Phone
(631) 435-1110
Fax
(631) 435-1824
w w w . c e n t r a l s e m i . c o m
PROCESS DETAILS
Please refer to
selection guide on page .
GEOMETRY
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
CP589
CJD42C
TIP42C
EPITAXIAL BASE
80 x 80 MILS
12 MILS
12 x 18 MILS
13 x 28 MILS
Al - 30,000
Cr/Ni/Ag - Ni-6,000; Ag-10,000
PNP - Amp/Switch Transistor Chip
Power Transistors
B
E
BACKSIDE COLLECTOR
20