PROCESS
CP593
Small Signal Transistors
PNP - Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N4403
2N5366
Process
Epitaxial Planar
Die Size
19 x 19 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Area
3.5 x 4.3 MILS
Emitter Bonding Pad Area
3.5 x 4.5 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 18,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
R0 (5- January 2006)
GROSS DIE PER 4 INCH WAFER
30,475
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