Central

Semiconductor Corp.

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CP622

Programmable

Unijunction Transistor

PRINCIPAL DEVICE TYPES

2N6027

GEOMETRY

PROCESS DETAILS

Process

PLANAR PASSIVATED

Die Size

27.5 x 27.5 MILS

Die Thickness

11 MILS

Anode Bonding Pad Area

7.1 x 5.1 MILS

Cathode Bonding Pad Area

7.1 x 5.1 MILS

Top Side Metalization

Al - 30,000�

Back Side Metalization

Au - 13,000�

GROSS DIE PER 4 INCH WAFER

14,930

R3 (4- February 2004)