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Электронный компонент: CP622

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Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP622
Programmable
Unijunction Transistor
PRINCIPAL DEVICE TYPES
2N6027
GEOMETRY
PROCESS DETAILS
Process
PLANAR PASSIVATED
Die Size
27.5 x 27.5 MILS
Die Thickness
11 MILS
Anode Bonding Pad Area
7.1 x 5.1 MILS
Cathode Bonding Pad Area
7.1 x 5.1 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 13,000
GROSS DIE PER 4 INCH WAFER
14,930
R3 (4- February 2004)
BACKSIDE GATE
Central
Semiconductor Corp.
TM
PROCESS
CP622
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (4- February 2004)