Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP712
Power Transistor
PNP - Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
CZT7120
GEOMETRY
PROCESS DETAILS
R1 (1-August 2002)
BACKSIDE COLLECTOR
Process
EPITAXIAL PLANAR
Die Size
75 x 75 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Area
17 x 12 MILS
Emitter Bonding Pad Area
31 x 12 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Ti/Ni/Ag - 11,300
GROSS DIE PER 4 INCH WAFER
1,960
Central
Semiconductor Corp.
TM
The Typical Electrical Characteristics data
for this chip is currently being revised.
For the latest updated data for this Chip Process,
please visit our website at:
www.centralsemi.com/chip
PROCESS
CP712
Typical Electrical Characteristics
R1 (1-August 2002)
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PDF 
ZIP