Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP792V
Small Signal Transistor
PNP - Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N3906
CMKT3906
CMLT3906E
CMPT3906
CMPT3906E
CMST3906
CXT3906
CZT3906
GEOMETRY
PROCESS DETAILS
BACKSIDE COLLECTOR
R1 (15 -April 2005)
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.0 MILS
Base Bonding Pad Area
3.7 x 3.7 MILS
Emitter Bonding Pad Area
3.7 x 3.7 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 18,000
GROSS DIE PER 4 INCH WAFER
93,826
R0
Central
Semiconductor Corp.
TM
R1 (15 -April 2005)
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP792V
Typical Electrical Characteristics
PDF 
ZIP