145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
1N3611 thru 1N3614
1N4001 thru 1N4007
1N4245 thru 1N4249
1N5059 thru 1N5062
1N5391 thru 1N5399
1N5614 thru 1N5622
CMR1-02 Series
CMR1-02M Series
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R2 (16-September 2003)
Process
GLASS PASSIVATED MESA
Die Size
50 x 50 MILS
Die Thickness
9.5 MILS
Anode Bonding Pad Area
34 x 34 MILS
Top Side Metalization
Au - 5,000
Back Side Metalization
Au - 2,000
GROSS DIE PER 4 INCH WAFER
4,520
Central
Semiconductor Corp.
TM
PROCESS
CPD05
General Purpose Rectifier
1 Amp Glass Passivated Rectifier Chip
Central
Semiconductor Corp.
TM
PROCESS
CPD05
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (16-September 2003)
PDF 
ZIP