145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
UES1001 thru UES1003
UF4001 thru UF4007
CMR1U-01 Series
CMR1U-01M Series
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R2 (19-September 2003)
Process
GLASS PASSIVATED MESA
Die Size
50 x 50 MILS
Die Thickness
12.2 MILS
Anode Bonding Pad Area
34 x 34 MILS
Top Side Metalization
Au - 5,000
Back Side Metalization
Au - 2,000
GROSS DIE PER 4 INCH WAFER
4,520
Central
Semiconductor Corp.
TM
PROCESS
CPD16
Ultra Fast Rectifier
1.0 Amp Glass Passivated Rectifier Chip
Central
Semiconductor Corp.
TM
PROCESS
CPD16
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (19-September 2003)
0.1
1
10
100
1000
10000
100000
0
200
400
600
800
1000
TA = 75C
TA = 25C
TA = 125C
PDF 
ZIP