Central

Semiconductor Corp.

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CPD25

Fast Recovery Rectifier

3 Amp Glass Passivated Rectifier Chip

PRINCIPAL DEVICE TYPES

1N5185 thru 1N5188
1N5415 thru 1N5420

GEOMETRY

PROCESS DETAILS

BACKSIDE CATHODE

R1 (1-August 2002)

Process

GLASS PASSIVATED MESA

Die Size

87 x 87 MILS

Die Thickness

10.6 MILS

Anode Bonding Pad Area

69.5 x 69.5 MILS

Top Side Metalization

Au - 5,000�

Back Side Metalization

Au - 2,000�

GROSS DIE PER 4 INCH WAFER

1,490

The Typical Electrical Characteristics data for

this chip is currently being revised.

For the latest updated data

for this Chip Process,

please visit our website at: