Central
Semiconductor Corp.
TM
PROCESS
CPD41
Switching Diode
High Current Switching Diode Chip
PRINCIPAL DEVICE TYPES
1N3600
1N4150
CMPD4150
Process
EPITAXIAL PLANAR
Die Size
20 x 20 MILS
Die Thickness
8.0 MILS
Anode Bonding Pad Area
6.5 x 6.5 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 12,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
BACKSIDE CATHODE
R2 (1-August 2002)
GROSS DIE PER 4 INCH WAFER
29,250
Central
Semiconductor Corp.
TM
PROCESS
CPD41
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
Capacitance
0.8
0.82
0.84
0.86
0.88
0.9
0.92
0.94
0.96
0.98
0.1
1
10
100
VR, Reverse Voltage (V)
C, Capacitance (pF)
T
A
= 25C
Forward Voltage
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
V
F
, Forward Voltage (V)
I F
, Forward Current (mA)
T
A
= -40C
T
A
= 25C
T
A
= 125C
Leakage Current
0.01
0.1
1
10
100
0
10
20
30
40
50
V
R
, Reverse Voltage (V)
I R
, Reverse Current (A)
T
A
= 25C
T
A
= 75C
T
A
= 125C
Forward Dynamic Impedance
0.1
1
10
100
1
10
100
1000
I
F
, Forward Current (mA)
Z
D
, Dynamic Impedance (ohms)
T
A
= 25C
PDF 
ZIP