Central
Semiconductor Corp.
TM
PROCESS
CPD48
Schottky Diode
High Current Schottky Diode Chip
PRINCIPAL DEVICE TYPES
CMPSH-3
CMPSH-3A
CMPSH-3C
CMPSH-3S
Process
EPITAXIAL PLANAR
Die Size
14 x 14 MILS
Die Thickness
9.0 MILS
Anode Bonding Pad Area
9.0 x 9.0 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 18,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
BACKSIDE CATHODE
GEOMETRY
R2 (1-August 2002)
GROSS DIE PER 4 INCH WAFER
62,250
Central
Semiconductor Corp.
TM
PROCESS
CPD48
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
PDF 
ZIP