PROCESS

CPD60

Switching Diode

High Voltage Switching Diode Chip

PRINCIPAL DEVICE TYPES

CMPD2003
CMPD2004
1N3070

Process

EPITAXIAL PLANAR

Die Size

17.5 x 17.5 MILS

Die Thickness

8.0 MILS

Anode Bonding Pad Area

8.0 MILS DIAMETER

Top Side Metalization

Al - 15,000�

Back Side Metalization

Au - 6,000�

PROCESS DETAILS

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

GEOMETRY

BACKSIDE CATHODE

R0 (5-September 2000)