Central
Semiconductor Corp.
TM
PROCESS
CPD63
Switching Diode
High Speed Switching Diode Chip
PRINCIPAL DEVICE TYPES
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
11 MILS
Anode Bonding pad Area
3.3 x 3.3 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 18,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
BACKSIDE CATHODE
R2 (1-August 2002)
GROSS DIE PER 4 INCH WAFER
94,130
Central
Semiconductor Corp.
TM
PROCESS
CPD63
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
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