PROCESS

CPD81

Schottky Rectifier

5 Amp Schottky Barrier Rectifier Chip

PRINCIPAL DEVICE TYPES

CZSH5-40

CZSH10-40CN (Dual Chip)

Die Size

72.5 x 72.5 MILS

Die Thickness

11.8 MILS

Anode Bonding Pad Area

63.8 x 63.8 MILS

Top Side Metalization

Al - 30,000�

Back Side Metalization

Au - 18,000�

GEOMETRY

PROCESS DETAILS

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

R0 (13 -August 2004)

GROSS DIE PER 4 INCH WAFER

2,178

PROCESS

CPD81

Typical Electrical Characteristics

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

R0 (13 -August 2004)

0.01

0.1

0.2

0.3

0.4

0.5

0.6